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Title: A quantum-dot heterostructure transistor with enhanced maximum drift velocity of electrons

Abstract

A new type of heterotransistor based on an AlGaAs/GaAs/InAs/GaAs/InAs structure with a layer of InAs quantum dots embedded directly into the GaAs channel is fabricated. High values of the maximum saturation current (up to 35 A/cm) and transconductance (up to 1300 mS/mm) are attained. The specific features of the current-voltage characteristics of the new device are explained in the context of a model that takes into account the ionization of quantum dots in high electric fields and tenfold enhancement of the electron drift velocity in a structure with an InAs quantum-dot layer in the vicinity of an AlGaAs/GaAs heterojunction.

Authors:
 [1]; ; ;  [2]
  1. Russian Academy of Sciences, Institute of Microwave Semiconductor Electronics (Russian Federation)
  2. Semiconductor Physics Institute (Lithuania)
Publication Date:
OSTI Identifier:
21088573
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 40; Journal Issue: 3; Other Information: DOI: 10.1134/S1063782606030201; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; ELECTRON DRIFT; ELECTRONS; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; IONIZATION; LAYERS; QUANTUM DOTS; TRANSISTORS; VELOCITY

Citation Formats

Mokerov, V., Pozela, J., E-mail: pozela@spi.pfi.lt, Pozela, K., and Juciene, V. A quantum-dot heterostructure transistor with enhanced maximum drift velocity of electrons. United States: N. p., 2006. Web. doi:10.1134/S1063782606030201.
Mokerov, V., Pozela, J., E-mail: pozela@spi.pfi.lt, Pozela, K., & Juciene, V. A quantum-dot heterostructure transistor with enhanced maximum drift velocity of electrons. United States. doi:10.1134/S1063782606030201.
Mokerov, V., Pozela, J., E-mail: pozela@spi.pfi.lt, Pozela, K., and Juciene, V. Wed . "A quantum-dot heterostructure transistor with enhanced maximum drift velocity of electrons". United States. doi:10.1134/S1063782606030201.
@article{osti_21088573,
title = {A quantum-dot heterostructure transistor with enhanced maximum drift velocity of electrons},
author = {Mokerov, V. and Pozela, J., E-mail: pozela@spi.pfi.lt and Pozela, K. and Juciene, V.},
abstractNote = {A new type of heterotransistor based on an AlGaAs/GaAs/InAs/GaAs/InAs structure with a layer of InAs quantum dots embedded directly into the GaAs channel is fabricated. High values of the maximum saturation current (up to 35 A/cm) and transconductance (up to 1300 mS/mm) are attained. The specific features of the current-voltage characteristics of the new device are explained in the context of a model that takes into account the ionization of quantum dots in high electric fields and tenfold enhancement of the electron drift velocity in a structure with an InAs quantum-dot layer in the vicinity of an AlGaAs/GaAs heterojunction.},
doi = {10.1134/S1063782606030201},
journal = {Semiconductors},
number = 3,
volume = 40,
place = {United States},
year = {Wed Mar 15 00:00:00 EST 2006},
month = {Wed Mar 15 00:00:00 EST 2006}
}