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Title: Specific features of the spectra of nonlinear optical absorption in nonstoichiometric and Ni doped GaSe single crystals

Journal Article · · Semiconductors
; ; ; ;  [1]
  1. National Academy of Sciences of Ukraine, Lashkarev Institute of Semiconductor Physics (Ukraine)

The method of two radiation sources is used to measure the spectra of nonlinear optical absorption in the GaSe, GaSe:Ni, Ca{sub 1.05}Se{sub 0.95}, and Ca{sub 0.95}Se{sub 1.05} single crystals. The levels with the depths of 1.38, 1.45, 1.55, 1.65, and 1.80 eV are detected. Absorption by nonequilibrium charge carriers, induced absorption, and induced transmission caused by a variation in the occupation of impurity centers due to laser radiation are observed in the spectra of nonlinear optical absorption.

OSTI ID:
21088570
Journal Information:
Semiconductors, Vol. 40, Issue 4; Other Information: DOI: 10.1134/S1063782606040038; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
Country of Publication:
United States
Language:
English

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