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Title: Effect of intraband carrier relaxation on the threshold characteristics of quantum well lasers

Abstract

The effect of intraband carrier relaxation on the threshold characteristics of InGaAsP quantum well (QW) lasers is studied. The dependence of the intraband hole-hole relaxation time {tau}{sub int} on temperature and carrier density is analyzed. It is shown that taking into account the finiteness of {tau}{sub int} and its dependence on temperature and carrier density strongly affects the gain and the threshold current density of QW lasers.

Authors:
; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation), E-mail: zegrya@theory.ioffe.ru
Publication Date:
OSTI Identifier:
21088554
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 40; Journal Issue: 4; Other Information: DOI: 10.1134/S1063782606040208; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIER DENSITY; CHARGE CARRIERS; HOLES; LASERS; QUANTUM WELLS; RELAXATION; RELAXATION TIME

Citation Formats

Kostko, I. A., Gun'ko, N. A., Bazhenov, N. L., Mynbaev, K. D., and Zegrya, G. G. Effect of intraband carrier relaxation on the threshold characteristics of quantum well lasers. United States: N. p., 2006. Web. doi:10.1134/S1063782606040208.
Kostko, I. A., Gun'ko, N. A., Bazhenov, N. L., Mynbaev, K. D., & Zegrya, G. G. Effect of intraband carrier relaxation on the threshold characteristics of quantum well lasers. United States. doi:10.1134/S1063782606040208.
Kostko, I. A., Gun'ko, N. A., Bazhenov, N. L., Mynbaev, K. D., and Zegrya, G. G. Sat . "Effect of intraband carrier relaxation on the threshold characteristics of quantum well lasers". United States. doi:10.1134/S1063782606040208.
@article{osti_21088554,
title = {Effect of intraband carrier relaxation on the threshold characteristics of quantum well lasers},
author = {Kostko, I. A. and Gun'ko, N. A. and Bazhenov, N. L. and Mynbaev, K. D. and Zegrya, G. G.},
abstractNote = {The effect of intraband carrier relaxation on the threshold characteristics of InGaAsP quantum well (QW) lasers is studied. The dependence of the intraband hole-hole relaxation time {tau}{sub int} on temperature and carrier density is analyzed. It is shown that taking into account the finiteness of {tau}{sub int} and its dependence on temperature and carrier density strongly affects the gain and the threshold current density of QW lasers.},
doi = {10.1134/S1063782606040208},
journal = {Semiconductors},
number = 4,
volume = 40,
place = {United States},
year = {Sat Apr 15 00:00:00 EDT 2006},
month = {Sat Apr 15 00:00:00 EDT 2006}
}