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Title: Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb

Abstract

The results of detailed study of the magnetotransport properties of broken-gap type II heterojunctions in a GaInAsSb/InAs(GaSb) system are reported. An electron channel with a high charge-carrier mobility (as high as 50000-60000 cm{sup 2}/(V s)) is observed and studied for the first time in an isotype broken-gap p-GaInAsSb/p-InAs heterostructure. The effects of electron-channel depletion and semimetal-semiconductor transition in the case of heavy doping of the quaternary alloy with acceptors are studied. Magnetotransport properties at temperatures of 4.2-200 K are studied in detail. Data on the energy spectrum and parameters of two-dimensional charge carriers at the heteroboundary are obtained. It is ascertained experimentally that, depending on the composition, either staggered (at x = 0.85) or broken-gap (at x = 0.95) heterojunctions can be formed in the Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/GaSb, which is confirmed by theoretical calculations. The anomalous Hall effect and negative magnetoresistance were observed in GaInAsSb/InAs:Mn grown on substrates doped heavily with Mn magnetic acceptor impurity so that the hole concentration was as high as p > 5 x 10{sup 18} cm{sup -3}; these phenomena are caused by exchange interaction of Mn ions in InAs with high-mobility charge carriers in the electron channel at the heterointerface.

Authors:
; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
21088551
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 40; Journal Issue: 5; Other Information: DOI: 10.1134/S1063782606050022; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY ALLOYS; ARSENIC ALLOYS; CHARGE CARRIERS; DOPED MATERIALS; ELECTRONS; ENERGY SPECTRA; EXCHANGE INTERACTIONS; GALLIUM ALLOYS; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; HALL EFFECT; HETEROJUNCTIONS; INDIUM ALLOYS; INDIUM ARSENIDES; MAGNETORESISTANCE; MANGANESE IONS; MOBILITY; QUATERNARY ALLOY SYSTEMS; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K

Citation Formats

Voronina, T I, Lagunova, T S, Mikhailova, M P, Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru, Lipaev, A F, and Yakovlev, Yu P. Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb. United States: N. p., 2006. Web. doi:10.1134/S1063782606050022.
Voronina, T I, Lagunova, T S, Mikhailova, M P, Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru, Lipaev, A F, & Yakovlev, Yu P. Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb. United States. https://doi.org/10.1134/S1063782606050022
Voronina, T I, Lagunova, T S, Mikhailova, M P, Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru, Lipaev, A F, and Yakovlev, Yu P. Mon . "Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb". United States. https://doi.org/10.1134/S1063782606050022.
@article{osti_21088551,
title = {Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb},
author = {Voronina, T I and Lagunova, T S and Mikhailova, M P and Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru and Lipaev, A F and Yakovlev, Yu P},
abstractNote = {The results of detailed study of the magnetotransport properties of broken-gap type II heterojunctions in a GaInAsSb/InAs(GaSb) system are reported. An electron channel with a high charge-carrier mobility (as high as 50000-60000 cm{sup 2}/(V s)) is observed and studied for the first time in an isotype broken-gap p-GaInAsSb/p-InAs heterostructure. The effects of electron-channel depletion and semimetal-semiconductor transition in the case of heavy doping of the quaternary alloy with acceptors are studied. Magnetotransport properties at temperatures of 4.2-200 K are studied in detail. Data on the energy spectrum and parameters of two-dimensional charge carriers at the heteroboundary are obtained. It is ascertained experimentally that, depending on the composition, either staggered (at x = 0.85) or broken-gap (at x = 0.95) heterojunctions can be formed in the Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/GaSb, which is confirmed by theoretical calculations. The anomalous Hall effect and negative magnetoresistance were observed in GaInAsSb/InAs:Mn grown on substrates doped heavily with Mn magnetic acceptor impurity so that the hole concentration was as high as p > 5 x 10{sup 18} cm{sup -3}; these phenomena are caused by exchange interaction of Mn ions in InAs with high-mobility charge carriers in the electron channel at the heterointerface.},
doi = {10.1134/S1063782606050022},
url = {https://www.osti.gov/biblio/21088551}, journal = {Semiconductors},
issn = {1063-7826},
number = 5,
volume = 40,
place = {United States},
year = {2006},
month = {5}
}