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Title: Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb

Abstract

The results of detailed study of the magnetotransport properties of broken-gap type II heterojunctions in a GaInAsSb/InAs(GaSb) system are reported. An electron channel with a high charge-carrier mobility (as high as 50000-60000 cm{sup 2}/(V s)) is observed and studied for the first time in an isotype broken-gap p-GaInAsSb/p-InAs heterostructure. The effects of electron-channel depletion and semimetal-semiconductor transition in the case of heavy doping of the quaternary alloy with acceptors are studied. Magnetotransport properties at temperatures of 4.2-200 K are studied in detail. Data on the energy spectrum and parameters of two-dimensional charge carriers at the heteroboundary are obtained. It is ascertained experimentally that, depending on the composition, either staggered (at x = 0.85) or broken-gap (at x = 0.95) heterojunctions can be formed in the Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/GaSb, which is confirmed by theoretical calculations. The anomalous Hall effect and negative magnetoresistance were observed in GaInAsSb/InAs:Mn grown on substrates doped heavily with Mn magnetic acceptor impurity so that the hole concentration was as high as p > 5 x 10{sup 18} cm{sup -3}; these phenomena are caused by exchange interaction of Mn ions in InAs with high-mobility charge carriers in the electron channel at the heterointerface.

Authors:
; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
21088551
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 40; Journal Issue: 5; Other Information: DOI: 10.1134/S1063782606050022; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY ALLOYS; ARSENIC ALLOYS; CHARGE CARRIERS; DOPED MATERIALS; ELECTRONS; ENERGY SPECTRA; EXCHANGE INTERACTIONS; GALLIUM ALLOYS; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; HALL EFFECT; HETEROJUNCTIONS; INDIUM ALLOYS; INDIUM ARSENIDES; MAGNETORESISTANCE; MANGANESE IONS; MOBILITY; QUATERNARY ALLOY SYSTEMS; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K

Citation Formats

Voronina, T. I., Lagunova, T. S., Mikhailova, M. P., Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru, Lipaev, A. F., and Yakovlev, Yu. P.. Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb. United States: N. p., 2006. Web. doi:10.1134/S1063782606050022.
Voronina, T. I., Lagunova, T. S., Mikhailova, M. P., Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru, Lipaev, A. F., & Yakovlev, Yu. P.. Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb. United States. doi:10.1134/S1063782606050022.
Voronina, T. I., Lagunova, T. S., Mikhailova, M. P., Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru, Lipaev, A. F., and Yakovlev, Yu. P.. Mon . "Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb". United States. doi:10.1134/S1063782606050022.
@article{osti_21088551,
title = {Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb},
author = {Voronina, T. I. and Lagunova, T. S. and Mikhailova, M. P. and Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru and Lipaev, A. F. and Yakovlev, Yu. P.},
abstractNote = {The results of detailed study of the magnetotransport properties of broken-gap type II heterojunctions in a GaInAsSb/InAs(GaSb) system are reported. An electron channel with a high charge-carrier mobility (as high as 50000-60000 cm{sup 2}/(V s)) is observed and studied for the first time in an isotype broken-gap p-GaInAsSb/p-InAs heterostructure. The effects of electron-channel depletion and semimetal-semiconductor transition in the case of heavy doping of the quaternary alloy with acceptors are studied. Magnetotransport properties at temperatures of 4.2-200 K are studied in detail. Data on the energy spectrum and parameters of two-dimensional charge carriers at the heteroboundary are obtained. It is ascertained experimentally that, depending on the composition, either staggered (at x = 0.85) or broken-gap (at x = 0.95) heterojunctions can be formed in the Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/GaSb, which is confirmed by theoretical calculations. The anomalous Hall effect and negative magnetoresistance were observed in GaInAsSb/InAs:Mn grown on substrates doped heavily with Mn magnetic acceptor impurity so that the hole concentration was as high as p > 5 x 10{sup 18} cm{sup -3}; these phenomena are caused by exchange interaction of Mn ions in InAs with high-mobility charge carriers in the electron channel at the heterointerface.},
doi = {10.1134/S1063782606050022},
journal = {Semiconductors},
number = 5,
volume = 40,
place = {United States},
year = {Mon May 15 00:00:00 EDT 2006},
month = {Mon May 15 00:00:00 EDT 2006}
}
  • Band diagrams and current-voltage and capacitance-voltage characteristics of isotype N{sup +}-GaSb/n{sup 0}-GaInAsSb/N{sup +}-GaAlAsSb heterostructures have been studied. Dark-current flow mechanisms have been analyzed. It is shown that a staggered type-II heterojunction can behave as a Schottky diode and its current-voltage characteristics exhibit rectifying properties over the entire temperature range 90-300 K. The thermionic-emission current predominates at high temperatures and low voltages. This current is due to thermal excitation of electrons from GaInAsSb to GaSb over the barrier at the heterointerface. A comparison of the relevant theoretical and experimental data confirmed that the tunneling charge transport mechanism plays the key rolemore » at low temperatures under both forward and reverse biases.« less
  • Optical properties of molecular beam epitaxially grown type II “W” shaped GaSb/AlSb/InAs/GaIn(As)Sb/InAs/AlSb/GaSb quantum wells (QWs) designed for the active region of interband cascade lasers have been investigated. Temperature dependence of Fourier-transformed photoluminescence and photoreflectance was employed to probe the effects of addition of arsenic into the original ternary valence band well of GaInSb. It is revealed that adding arsenic provides an additional degree of freedom in terms of band alignment and strain tailoring and allows enhancing the oscillator strength of the active type II transition. On the other hand, however, arsenic incorporation apparently also affects the structural and optical materialmore » quality via generating carrier trapping states at the interfaces, which can deteriorate the radiative efficiency. These have been evidenced in several spectroscopic features and are also confirmed by cross-sectional transmission electron microscopy images. While arsenic incorporation into type II QWs is a powerful heterostructure engineering tool for optoelectronic devices, a compromise has to be found between ideal band structure properties and high quality morphological properties.« less
  • Conditions for the transition from the staggered heterojunction to the type-II broken-gap one were considered for isolated Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/InAs(GaSb) heterostructures in relation to the quaternary alloy composition. Energy-band diagrams of such heterojunctions were estimated and energy band offsets {delta} at the heterointerface were determined. It was experimentally found that the type-II broken-gap heterojunction in the Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/p-InAs structure is observed in the entire range of composition parameters under study, 0.03 < x < 0.23, and becomes staggered in the range 0.3 < x < 1. In p-Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/p-GaSb heterostructures with themore » indium content 0.85 < x < 0.92 in the solid phase, the p-type conductivity is observed, which is indicative of the staggered heterojunction. At x > 0.92, the contribution of electrons of the semimetal channel at the heterointerface to the total conductivity was observed, as well as the transition from the staggered heterojunction to the type-II broken-gap one.« less
  • A new type of light-emitting diodes (LEDs), a high-efficiency device based on an n-GaSb/p-GaSb/n-GaInAsSb/P-AlGaAsSb thyristor heterostructure, with the maximum emission intensity at wavelength {lambda} = 1.95 {mu}m, has been suggested and its electrical and luminescent characteristics have been studied. It is shown that the effective radiative recombination in the thyristor structure in the n-type GaInAsSb active region is provided by double-sided injection of holes from the neighboring p-type regions. The maximum internal quantum efficiency of 77% was achieved in the structure under study in the pulsed mode. The average optical power was as high as 2.5 mW, and the peakmore » power in the pulsed mode was 71 mW, which exceeded by a factor of 2.9 the power obtained with a standard n-GaSb/n-GaInAsSb/P-AlGaAsSb LED operating in the same spectral range. The approach suggested will make it possible to improve LED parameters in the entire mid-IR spectral range (2-5 {mu}m)« less
  • No abstract prepared.