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Title: Studies of physical phenomena in semiconductor nanostructures using samples with laterally nonuniform layers. Photoluminescence of structures with n-type {delta}-doped layers

Abstract

Photoluminescence of a structure based on GaAs with {delta}-doped n-type layers is studied experimentally at 77 K in the context of a previously suggested spectral-correlative method for investigating semiconductor structures with laterally nonuniform layers. This method makes it possible to study (for the same sample) the features of the observed multicomponent photoluminescence spectrum in relation to two parameters, i.e., the distance between the {delta}-doped layers and the width of a narrow InGaAs quantum well located between these layers. The results obtained make it possible to relate the observed exponential increase in the intensity of photoluminescence from the region of {delta}-doped layers as these parameters are varied to the variation in the ratio between the concentration of the holes laterally localized in the minimums of the fluctuation potential and that of free two-dimensional holes. An effect of stabilization of the energy position of the photoluminescence spectral lines is observed; this effect is related to the localization of holes in the potential well between the {delta}-doped layers. The experimental data obtained are consistent with the results of our numerical calculations.

Authors:
 [1];  [2];  [3];  [4]
  1. Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation), E-mail: yukhabar@mtu-net.ru
  2. Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)
  3. Russian Academy of Sciences, Institute of Radio Engineering and Electronics (Russian Federation)
  4. Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation)
Publication Date:
OSTI Identifier:
21088546
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 40; Journal Issue: 5; Other Information: DOI: 10.1134/S1063782606050095; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DOPED MATERIALS; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; PHOTOLUMINESCENCE; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SPECTRA; STABILIZATION; TEMPERATURE RANGE 0065-0273 K

Citation Formats

Khabarov, Yu. V., Kapaev, V. V., Petrov, V. A., and Galiev, G. B. Studies of physical phenomena in semiconductor nanostructures using samples with laterally nonuniform layers. Photoluminescence of structures with n-type {delta}-doped layers. United States: N. p., 2006. Web. doi:10.1134/S1063782606050095.
Khabarov, Yu. V., Kapaev, V. V., Petrov, V. A., & Galiev, G. B. Studies of physical phenomena in semiconductor nanostructures using samples with laterally nonuniform layers. Photoluminescence of structures with n-type {delta}-doped layers. United States. doi:10.1134/S1063782606050095.
Khabarov, Yu. V., Kapaev, V. V., Petrov, V. A., and Galiev, G. B. Mon . "Studies of physical phenomena in semiconductor nanostructures using samples with laterally nonuniform layers. Photoluminescence of structures with n-type {delta}-doped layers". United States. doi:10.1134/S1063782606050095.
@article{osti_21088546,
title = {Studies of physical phenomena in semiconductor nanostructures using samples with laterally nonuniform layers. Photoluminescence of structures with n-type {delta}-doped layers},
author = {Khabarov, Yu. V. and Kapaev, V. V. and Petrov, V. A. and Galiev, G. B.},
abstractNote = {Photoluminescence of a structure based on GaAs with {delta}-doped n-type layers is studied experimentally at 77 K in the context of a previously suggested spectral-correlative method for investigating semiconductor structures with laterally nonuniform layers. This method makes it possible to study (for the same sample) the features of the observed multicomponent photoluminescence spectrum in relation to two parameters, i.e., the distance between the {delta}-doped layers and the width of a narrow InGaAs quantum well located between these layers. The results obtained make it possible to relate the observed exponential increase in the intensity of photoluminescence from the region of {delta}-doped layers as these parameters are varied to the variation in the ratio between the concentration of the holes laterally localized in the minimums of the fluctuation potential and that of free two-dimensional holes. An effect of stabilization of the energy position of the photoluminescence spectral lines is observed; this effect is related to the localization of holes in the potential well between the {delta}-doped layers. The experimental data obtained are consistent with the results of our numerical calculations.},
doi = {10.1134/S1063782606050095},
journal = {Semiconductors},
number = 5,
volume = 40,
place = {United States},
year = {Mon May 15 00:00:00 EDT 2006},
month = {Mon May 15 00:00:00 EDT 2006}
}