Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
- Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Division (Russian Federation)
Transmitting electron microscopy and X-ray diffractometry are used to study the GaAs layers undoped or doped uniformly with phosphorus (2.3 mol %) and grown at a temperature of 250 deg. C and then annealed isochronously at 400, 500, 600, or 700 deg. C. It is ascertained that doping with phosphorus reduces the amount of excess arsenic captured in the layer in the course of growth and also brings about a retardation of precipitation during subsequent annealing. The concentration of excess arsenic in undoped samples amounted to {approx}0.2 at %; clusters were observed after annealing at a temperature of 500 deg. C. The concentration of excess arsenic amounted to 0.1 at % in the samples containing phosphorus; in this case, the clusters were observed only after a heat treatment at 600 deg. C. The average size of clusters in doped samples is smaller than that in undoped samples at the same heat-treatment temperatures.
- OSTI ID:
- 21088517
- Journal Information:
- Semiconductors, Vol. 40, Issue 7; Other Information: DOI: 10.1134/S1063782606070025; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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