Electrical properties and structure of chalcogenide glasses containing bivalent tin
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Two valence states of tin atoms are identified by Moessbauer and X-ray photoelectron spectroscopy in (As{sub 2}Se{sub 3}){sub 1-z}(GeSe){sub z-x}(SnSe){sub x} glasses; it is shown that the presence of bivalent tin in the structural network of a glass does not give rise to impurity conductivity and impurity optical absorption. It is suggested to regard (As{sub 2}Se{sub 3}){sub 1-z}(GeSe){sub z-x}(SnSe){sub x} and (As{sub 2}Se{sub 3}){sub 1-z}(GeSe{sub 2}){sub z-x}(SnSe{sub 2}){sub x} glasses as semiconductor solid solutions whose electrical properties depend both on the electrical properties of the starting components and on the composition of the solid solutions.
- OSTI ID:
- 21088466
- Journal Information:
- Semiconductors, Vol. 41, Issue 1; Other Information: DOI: 10.1134/S106378260701006X; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Thermal stability and radiation resistance of tin valent states in the structure of the (As{sub 2}Se{sub 3}){sub 1-z}(SnSe){sub z-x}(GeSe){sub x} semiconductor glasses
Realization of a high-pressure structure during crystallization of chalcogenide glasses
Tin impurity centers in glassy germanium chalcogenides
Journal Article
·
Sat Dec 15 00:00:00 EST 2007
· Semiconductors
·
OSTI ID:21088466
+1 more
Realization of a high-pressure structure during crystallization of chalcogenide glasses
Journal Article
·
Wed Jul 20 00:00:00 EDT 1988
· J. Appl. Chem. USSR (Engl. Transl.); (United States)
·
OSTI ID:21088466
Tin impurity centers in glassy germanium chalcogenides
Journal Article
·
Sat Oct 15 00:00:00 EDT 2011
· Semiconductors
·
OSTI ID:21088466
+2 more