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Title: Electrical properties and structure of chalcogenide glasses containing bivalent tin

Abstract

Two valence states of tin atoms are identified by Moessbauer and X-ray photoelectron spectroscopy in (As{sub 2}Se{sub 3}){sub 1-z}(GeSe){sub z-x}(SnSe){sub x} glasses; it is shown that the presence of bivalent tin in the structural network of a glass does not give rise to impurity conductivity and impurity optical absorption. It is suggested to regard (As{sub 2}Se{sub 3}){sub 1-z}(GeSe){sub z-x}(SnSe){sub x} and (As{sub 2}Se{sub 3}){sub 1-z}(GeSe{sub 2}){sub z-x}(SnSe{sub 2}){sub x} glasses as semiconductor solid solutions whose electrical properties depend both on the electrical properties of the starting components and on the composition of the solid solutions.

Authors:
; ;  [1];  [2]
  1. Herzen State Pedagogical University of Russia (Russian Federation), E-mail: PPSeregin@hotmail.ru
  2. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
21088466
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 1; Other Information: DOI: 10.1134/S106378260701006X; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; ARSENIC SELENIDES; ELECTRICAL PROPERTIES; GERMANIUM SELENIDES; GLASS; IMPURITIES; SEMICONDUCTOR MATERIALS; SOLID SOLUTIONS; TIN; TIN SELENIDES; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Bordovskii, G. A., Castro, R. A., Seregin, P. P., and Terukov, E. I.. Electrical properties and structure of chalcogenide glasses containing bivalent tin. United States: N. p., 2007. Web. doi:10.1134/S106378260701006X.
Bordovskii, G. A., Castro, R. A., Seregin, P. P., & Terukov, E. I.. Electrical properties and structure of chalcogenide glasses containing bivalent tin. United States. doi:10.1134/S106378260701006X.
Bordovskii, G. A., Castro, R. A., Seregin, P. P., and Terukov, E. I.. Mon . "Electrical properties and structure of chalcogenide glasses containing bivalent tin". United States. doi:10.1134/S106378260701006X.
@article{osti_21088466,
title = {Electrical properties and structure of chalcogenide glasses containing bivalent tin},
author = {Bordovskii, G. A. and Castro, R. A. and Seregin, P. P. and Terukov, E. I.},
abstractNote = {Two valence states of tin atoms are identified by Moessbauer and X-ray photoelectron spectroscopy in (As{sub 2}Se{sub 3}){sub 1-z}(GeSe){sub z-x}(SnSe){sub x} glasses; it is shown that the presence of bivalent tin in the structural network of a glass does not give rise to impurity conductivity and impurity optical absorption. It is suggested to regard (As{sub 2}Se{sub 3}){sub 1-z}(GeSe){sub z-x}(SnSe){sub x} and (As{sub 2}Se{sub 3}){sub 1-z}(GeSe{sub 2}){sub z-x}(SnSe{sub 2}){sub x} glasses as semiconductor solid solutions whose electrical properties depend both on the electrical properties of the starting components and on the composition of the solid solutions.},
doi = {10.1134/S106378260701006X},
journal = {Semiconductors},
number = 1,
volume = 41,
place = {United States},
year = {Mon Jan 15 00:00:00 EST 2007},
month = {Mon Jan 15 00:00:00 EST 2007}
}
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