Quasistatic capacitance of a weakly compensated semiconductor with hopping conduction (on the example of pSi:B)
Abstract
A moderately doped semiconductor is considered on the insulator side of the insulatormetal phase transition, where the acceptors in (1), (0), and (+1) charge states form A{sup 0} and A{sup +} bands. The expressions are derived for the DebyeHueckel and SchottkyMott screening lengths of an external electrostatic field for the case of hopping transport of holes via acceptors. The quasistatic capacitance of a semiconductor is calculated in the temperature region where hopping hole conductances in the A{sup 0} and A{sup +} bands are approximately equal. It is shown that the DebyeHueckel screening length can be determined using the measurements of quasistatic capacitance even in the highfield regime, i.e., in the SchottkyMott approximation. The frequency of an electric signal in the measurements of quasistatic semiconductor capacitance in a metalinsulatorsemiconductor structure must be much lower than the average frequency of hole hopping via acceptors (boron atoms in silicon)
 Authors:
 Belarusian State University (Belarus)
 Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
 Publication Date:
 OSTI Identifier:
 21088464
 Resource Type:
 Journal Article
 Resource Relation:
 Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 1; Other Information: DOI: 10.1134/S1063782607010083; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
 Country of Publication:
 United States
 Language:
 English
 Subject:
 36 MATERIALS SCIENCE; BORON; CAPACITANCE; CHARGE STATES; DOPED MATERIALS; HOLES; PHASE TRANSFORMATIONS; SEMICONDUCTOR MATERIALS; SILICON
Citation Formats
Poklonski, N. A., Email: poklonski@bsu.by, Vyrko, S. A., and Zabrodskii, A. G.. Quasistatic capacitance of a weakly compensated semiconductor with hopping conduction (on the example of pSi:B). United States: N. p., 2007.
Web. doi:10.1134/S1063782607010083.
Poklonski, N. A., Email: poklonski@bsu.by, Vyrko, S. A., & Zabrodskii, A. G.. Quasistatic capacitance of a weakly compensated semiconductor with hopping conduction (on the example of pSi:B). United States. doi:10.1134/S1063782607010083.
Poklonski, N. A., Email: poklonski@bsu.by, Vyrko, S. A., and Zabrodskii, A. G.. Mon .
"Quasistatic capacitance of a weakly compensated semiconductor with hopping conduction (on the example of pSi:B)". United States.
doi:10.1134/S1063782607010083.
@article{osti_21088464,
title = {Quasistatic capacitance of a weakly compensated semiconductor with hopping conduction (on the example of pSi:B)},
author = {Poklonski, N. A., Email: poklonski@bsu.by and Vyrko, S. A. and Zabrodskii, A. G.},
abstractNote = {A moderately doped semiconductor is considered on the insulator side of the insulatormetal phase transition, where the acceptors in (1), (0), and (+1) charge states form A{sup 0} and A{sup +} bands. The expressions are derived for the DebyeHueckel and SchottkyMott screening lengths of an external electrostatic field for the case of hopping transport of holes via acceptors. The quasistatic capacitance of a semiconductor is calculated in the temperature region where hopping hole conductances in the A{sup 0} and A{sup +} bands are approximately equal. It is shown that the DebyeHueckel screening length can be determined using the measurements of quasistatic capacitance even in the highfield regime, i.e., in the SchottkyMott approximation. The frequency of an electric signal in the measurements of quasistatic semiconductor capacitance in a metalinsulatorsemiconductor structure must be much lower than the average frequency of hole hopping via acceptors (boron atoms in silicon)},
doi = {10.1134/S1063782607010083},
journal = {Semiconductors},
number = 1,
volume = 41,
place = {United States},
year = {Mon Jan 15 00:00:00 EST 2007},
month = {Mon Jan 15 00:00:00 EST 2007}
}

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