skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Quasi-static capacitance of a weakly compensated semiconductor with hopping conduction (on the example of p-Si:B)

Abstract

A moderately doped semiconductor is considered on the insulator side of the insulator-metal phase transition, where the acceptors in (-1), (0), and (+1) charge states form A{sup 0} and A{sup +} bands. The expressions are derived for the Debye-Hueckel and Schottky-Mott screening lengths of an external electrostatic field for the case of hopping transport of holes via acceptors. The quasistatic capacitance of a semiconductor is calculated in the temperature region where hopping hole conductances in the A{sup 0} and A{sup +} bands are approximately equal. It is shown that the Debye-Hueckel screening length can be determined using the measurements of quasistatic capacitance even in the high-field regime, i.e., in the Schottky-Mott approximation. The frequency of an electric signal in the measurements of quasistatic semiconductor capacitance in a metal-insulator-semiconductor structure must be much lower than the average frequency of hole hopping via acceptors (boron atoms in silicon)

Authors:
;  [1];  [2]
  1. Belarusian State University (Belarus)
  2. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
21088464
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 1; Other Information: DOI: 10.1134/S1063782607010083; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON; CAPACITANCE; CHARGE STATES; DOPED MATERIALS; HOLES; PHASE TRANSFORMATIONS; SEMICONDUCTOR MATERIALS; SILICON

Citation Formats

Poklonski, N. A., E-mail: poklonski@bsu.by, Vyrko, S. A., and Zabrodskii, A. G. Quasi-static capacitance of a weakly compensated semiconductor with hopping conduction (on the example of p-Si:B). United States: N. p., 2007. Web. doi:10.1134/S1063782607010083.
Poklonski, N. A., E-mail: poklonski@bsu.by, Vyrko, S. A., & Zabrodskii, A. G. Quasi-static capacitance of a weakly compensated semiconductor with hopping conduction (on the example of p-Si:B). United States. doi:10.1134/S1063782607010083.
Poklonski, N. A., E-mail: poklonski@bsu.by, Vyrko, S. A., and Zabrodskii, A. G. Mon . "Quasi-static capacitance of a weakly compensated semiconductor with hopping conduction (on the example of p-Si:B)". United States. doi:10.1134/S1063782607010083.
@article{osti_21088464,
title = {Quasi-static capacitance of a weakly compensated semiconductor with hopping conduction (on the example of p-Si:B)},
author = {Poklonski, N. A., E-mail: poklonski@bsu.by and Vyrko, S. A. and Zabrodskii, A. G.},
abstractNote = {A moderately doped semiconductor is considered on the insulator side of the insulator-metal phase transition, where the acceptors in (-1), (0), and (+1) charge states form A{sup 0} and A{sup +} bands. The expressions are derived for the Debye-Hueckel and Schottky-Mott screening lengths of an external electrostatic field for the case of hopping transport of holes via acceptors. The quasistatic capacitance of a semiconductor is calculated in the temperature region where hopping hole conductances in the A{sup 0} and A{sup +} bands are approximately equal. It is shown that the Debye-Hueckel screening length can be determined using the measurements of quasistatic capacitance even in the high-field regime, i.e., in the Schottky-Mott approximation. The frequency of an electric signal in the measurements of quasistatic semiconductor capacitance in a metal-insulator-semiconductor structure must be much lower than the average frequency of hole hopping via acceptors (boron atoms in silicon)},
doi = {10.1134/S1063782607010083},
journal = {Semiconductors},
number = 1,
volume = 41,
place = {United States},
year = {Mon Jan 15 00:00:00 EST 2007},
month = {Mon Jan 15 00:00:00 EST 2007}
}