Quasi-static capacitance of a weakly compensated semiconductor with hopping conduction (on the example of p-Si:B)
- Belarusian State University (Belarus)
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
A moderately doped semiconductor is considered on the insulator side of the insulator-metal phase transition, where the acceptors in (-1), (0), and (+1) charge states form A{sup 0} and A{sup +} bands. The expressions are derived for the Debye-Hueckel and Schottky-Mott screening lengths of an external electrostatic field for the case of hopping transport of holes via acceptors. The quasistatic capacitance of a semiconductor is calculated in the temperature region where hopping hole conductances in the A{sup 0} and A{sup +} bands are approximately equal. It is shown that the Debye-Hueckel screening length can be determined using the measurements of quasistatic capacitance even in the high-field regime, i.e., in the Schottky-Mott approximation. The frequency of an electric signal in the measurements of quasistatic semiconductor capacitance in a metal-insulator-semiconductor structure must be much lower than the average frequency of hole hopping via acceptors (boron atoms in silicon)
- OSTI ID:
- 21088464
- Journal Information:
- Semiconductors, Vol. 41, Issue 1; Other Information: DOI: 10.1134/S1063782607010083; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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