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Title: Schottky barriers based on n-In{sub 2}S{sub 3} films obtained by laser-induced evaporation

Abstract

The method of evaporation of starting targets with subsequent deposition onto glass substrates at temperatures of 480-720 K is used to grow homogeneous thin (0.6-1.5 {mu}m) n-In{sub 2}S{sub 3} films on which the In/n-In{sub 2}S{sub 3} Schottky barriers were formed for the first time; evaporation was induced by a pulsed laser. The temperature dependence of resistivity of the films with the n-type conductivity was studied and the activation energy of donor centers in these films was determined. Spectral dependences of the photoconversion quantum efficiency {eta}({Dirac_h}{omega}) for the barriers obtained were studied. An analysis of the spectral dependences {eta}({Dirac_h}{omega}) made it possible to identify the type of band-to-band transitions and estimate the band gap in the In{sub 2}S{sub 3} films. It is concluded that the thin In{sub 2}S{sub 3} films can be used in broadband photoconverters of optical radiation.

Authors:
;  [1];  [2];  [3];  [4]
  1. Belarussian State University of Informatics and Radioelectronics (Belarus)
  2. National Academy of Sciences of Belarus, Joint Institute of Solid-State and Semiconductor Physics (Belarus), E-mail: gremenok@ifttp.bas-net.by
  3. St. Petersburg State Polytechnical University (Russian Federation)
  4. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation), E-mail: yuryrud@mail.ioffe.ru
Publication Date:
OSTI Identifier:
21088461
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 1; Other Information: DOI: 10.1134/S1063782607010113; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; DEPOSITION; EVAPORATION; FILMS; GLASS; INDIUM SULFIDES; LASER RADIATION; QUANTUM EFFICIENCY; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K

Citation Formats

Bodnar', I. V., Polubok, V. A., Gremenok, V. F., Rud', V. Yu., and Rud', Yu. V. Schottky barriers based on n-In{sub 2}S{sub 3} films obtained by laser-induced evaporation. United States: N. p., 2007. Web. doi:10.1134/S1063782607010113.
Bodnar', I. V., Polubok, V. A., Gremenok, V. F., Rud', V. Yu., & Rud', Yu. V. Schottky barriers based on n-In{sub 2}S{sub 3} films obtained by laser-induced evaporation. United States. doi:10.1134/S1063782607010113.
Bodnar', I. V., Polubok, V. A., Gremenok, V. F., Rud', V. Yu., and Rud', Yu. V. Mon . "Schottky barriers based on n-In{sub 2}S{sub 3} films obtained by laser-induced evaporation". United States. doi:10.1134/S1063782607010113.
@article{osti_21088461,
title = {Schottky barriers based on n-In{sub 2}S{sub 3} films obtained by laser-induced evaporation},
author = {Bodnar', I. V. and Polubok, V. A. and Gremenok, V. F. and Rud', V. Yu. and Rud', Yu. V.},
abstractNote = {The method of evaporation of starting targets with subsequent deposition onto glass substrates at temperatures of 480-720 K is used to grow homogeneous thin (0.6-1.5 {mu}m) n-In{sub 2}S{sub 3} films on which the In/n-In{sub 2}S{sub 3} Schottky barriers were formed for the first time; evaporation was induced by a pulsed laser. The temperature dependence of resistivity of the films with the n-type conductivity was studied and the activation energy of donor centers in these films was determined. Spectral dependences of the photoconversion quantum efficiency {eta}({Dirac_h}{omega}) for the barriers obtained were studied. An analysis of the spectral dependences {eta}({Dirac_h}{omega}) made it possible to identify the type of band-to-band transitions and estimate the band gap in the In{sub 2}S{sub 3} films. It is concluded that the thin In{sub 2}S{sub 3} films can be used in broadband photoconverters of optical radiation.},
doi = {10.1134/S1063782607010113},
journal = {Semiconductors},
number = 1,
volume = 41,
place = {United States},
year = {Mon Jan 15 00:00:00 EST 2007},
month = {Mon Jan 15 00:00:00 EST 2007}
}