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Title: Schottky barriers based on n-In{sub 2}S{sub 3} films obtained by laser-induced evaporation

Abstract

The method of evaporation of starting targets with subsequent deposition onto glass substrates at temperatures of 480-720 K is used to grow homogeneous thin (0.6-1.5 {mu}m) n-In{sub 2}S{sub 3} films on which the In/n-In{sub 2}S{sub 3} Schottky barriers were formed for the first time; evaporation was induced by a pulsed laser. The temperature dependence of resistivity of the films with the n-type conductivity was studied and the activation energy of donor centers in these films was determined. Spectral dependences of the photoconversion quantum efficiency {eta}({Dirac_h}{omega}) for the barriers obtained were studied. An analysis of the spectral dependences {eta}({Dirac_h}{omega}) made it possible to identify the type of band-to-band transitions and estimate the band gap in the In{sub 2}S{sub 3} films. It is concluded that the thin In{sub 2}S{sub 3} films can be used in broadband photoconverters of optical radiation.

Authors:
;  [1];  [2];  [3];  [4]
  1. Belarussian State University of Informatics and Radioelectronics (Belarus)
  2. National Academy of Sciences of Belarus, Joint Institute of Solid-State and Semiconductor Physics (Belarus), E-mail: gremenok@ifttp.bas-net.by
  3. St. Petersburg State Polytechnical University (Russian Federation)
  4. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation), E-mail: yuryrud@mail.ioffe.ru
Publication Date:
OSTI Identifier:
21088461
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 1; Other Information: DOI: 10.1134/S1063782607010113; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; DEPOSITION; EVAPORATION; FILMS; GLASS; INDIUM SULFIDES; LASER RADIATION; QUANTUM EFFICIENCY; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K

Citation Formats

Bodnar', I. V., Polubok, V. A., Gremenok, V. F., Rud', V. Yu., and Rud', Yu. V. Schottky barriers based on n-In{sub 2}S{sub 3} films obtained by laser-induced evaporation. United States: N. p., 2007. Web. doi:10.1134/S1063782607010113.
Bodnar', I. V., Polubok, V. A., Gremenok, V. F., Rud', V. Yu., & Rud', Yu. V. Schottky barriers based on n-In{sub 2}S{sub 3} films obtained by laser-induced evaporation. United States. doi:10.1134/S1063782607010113.
Bodnar', I. V., Polubok, V. A., Gremenok, V. F., Rud', V. Yu., and Rud', Yu. V. Mon . "Schottky barriers based on n-In{sub 2}S{sub 3} films obtained by laser-induced evaporation". United States. doi:10.1134/S1063782607010113.
@article{osti_21088461,
title = {Schottky barriers based on n-In{sub 2}S{sub 3} films obtained by laser-induced evaporation},
author = {Bodnar', I. V. and Polubok, V. A. and Gremenok, V. F. and Rud', V. Yu. and Rud', Yu. V.},
abstractNote = {The method of evaporation of starting targets with subsequent deposition onto glass substrates at temperatures of 480-720 K is used to grow homogeneous thin (0.6-1.5 {mu}m) n-In{sub 2}S{sub 3} films on which the In/n-In{sub 2}S{sub 3} Schottky barriers were formed for the first time; evaporation was induced by a pulsed laser. The temperature dependence of resistivity of the films with the n-type conductivity was studied and the activation energy of donor centers in these films was determined. Spectral dependences of the photoconversion quantum efficiency {eta}({Dirac_h}{omega}) for the barriers obtained were studied. An analysis of the spectral dependences {eta}({Dirac_h}{omega}) made it possible to identify the type of band-to-band transitions and estimate the band gap in the In{sub 2}S{sub 3} films. It is concluded that the thin In{sub 2}S{sub 3} films can be used in broadband photoconverters of optical radiation.},
doi = {10.1134/S1063782607010113},
journal = {Semiconductors},
number = 1,
volume = 41,
place = {United States},
year = {Mon Jan 15 00:00:00 EST 2007},
month = {Mon Jan 15 00:00:00 EST 2007}
}
  • The properties of Sb{sub 2}S{sub 3} and Sb{sub 2}Se{sub 3} thin films of variable thickness deposited onto Al{sub 2}O{sub 3}, Si, and KCl substrates are investigated by the method of pulsed laser ablation. The samples are obtained at a substrate temperature of 180 Degree-Sign C in a vacuum chamber with a residual pressure of 10{sup -5} Torr. The thickness of the films amounted to 40-1500 nm. The structure of the bulk material of the targets and films is investigated by the methods of X-ray diffraction and transmission high-energy electron diffraction, respectively. The electrical properties of the films are investigated inmore » the temperature range of 253-310 K. It is shown that the films have semiconductor properties. The structural features of the films determine their optical parameters.« less
  • Heat capacity measurements of four lanthanide sesquisulfides La{sub 2}S{sub 3}, Ce{sub 2}S{sub 3}, Nd{sub 2}S{sub 3}, and Gd{sub 2}S{sub 3}, prepared in the {gamma} phase, have been obtained between 6 and 350 K by adiabatic calorimetry. The total heat capacity has been resolved into lattice, electronic, magnetic, and Schottky components. The Schottky contributions agree well with the calculated values based on the observed splitting of the ground-state manifold of the rare earth ions occupying sites of S{sub 4} symmetry in the Th{sub 3}P{sub 4} structure. The observed splitting is obtained from an analysis of the hot bands in the absorptionmore » spectrum and from direct observation of the Stark levels in the far infrared. The Stark levels (all doublets) for Ce{sub 2}S{sub 3} ({sup 2}{ital F}{sub 5/2}) are 0, 185, and 358 cm{sup {minus}1}; for Nd{sub 2}S{sub 3}({sup 4}{ital I}{sub 9/2}), they are 0, 76, 150, 180, and 385 cm{sup {minus}1}. For La{sub 2}S{sub 3}, which has no Schottky or magnetic contributions to the heat capacity, the thermal data can be extrapolated to 0 K. The entropy for La{sub 2}S{sub 3} at 298.15 K (as {ital S}{sup 0}/{ital R}) is 19.51. Schottky and magnetic ordering at lower temperatures in Ce{sub 2}S{sub 3}, Nd{sub 2}S{sub 3}, and Gd{sub 2}S{sub 3} preclude such extrapolation techniques. Therefore the entropy at 298.15 K for these compounds {l brace}{ital S}{sup 0}{minus}{ital S}{sup 0}(7 K){r brace}/{ital R}, is 21.34, 22.38, and 20.05, respectively.« less
  • The reduction of ReO{sub 4}{sup {minus}} with 2-hydrazinopyridine dihydrochloride and PPh{sub 3} gives [ReCl(PPh{sub 3}){sub 2}(NHNC{sub 5}H{sub 4}N)-(HNNC{sub 5}H{sub 4}N)]Cl{sub 2} (2). A similar reaction using 2-hydrazino-2-imidazoline and PPh{sub 3} in methanol hydrochloric acid allows the preparation of [ReCl{sub 3}(PPh{sub 3}){sub 2}(NNC{sub 3}H{sub 4}N{sub 2})] (3). The reaction of the Re(III) complex [ReCl{sub 3}(NNC{sub 5}H{sub 4}NH)(HNNC{sub 5}H{sub 4}N)] (1), with 2-(Ph{sub 2}P)C{sub 6}H{sub 4}SH in methanol yields [Re{l_brace}2-(Ph{sub 2}P)C{sub 6}H{sub 4}S{r_brace}-{l_brace}2-(Ph{sub 2}PO)C{sub 6}H{sub 4}S{r_brace}(NNC{sub 5}H{sub 4}N)(HNNC{sub 5}H{sub 4}N)] (4) and [Re{l_brace}2-(Ph{sub 2}P)C{sub 6}H{sub 4}S{r_brace}{sub 2}(NNC{sub 5}H{sub 4}N)] (5). The same precursor with 2-(Ph{sub 2}PO)-6-(Me{sub 3}Si)C{sub 6}H{sub 3}SH gives [ReCl{l_brace}2-(Ph{sub 2}PO)-6-(Me{submore » 3}Si)C{sub 6}H{sub 3}S{r_brace}(NNC{sub 5}H{sub 4}N)(HNNC{sub 5}H{sub 4}N)] (6) and with PhP(C{sub 6}H{sub 4}SH-2){sub 2} yields [Re{l_brace}PhP(C{sub 6}H{sub 4}S-2){sub 2}{r_brace}(NNC{sub 5}H{sub 4}N)(HNNC{sub 5}H{sub 4}N)] (7).« less
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  • This investigation centers on the preparation of new binary carbon sulfides based on the 1,2-dithiole-3-thione subunit as found in the precursor dithiolate C[sub 3]S[sub 5][sup 2[minus]]. Tricyclic S[sub 6]S[sub 8], 1, was obtained in high yield by thermal elimination of H[sub 2]S from the dimercaptan [beta]-C[sub 3]S[sub 5]H[sub 2]. A crystallographic study confirmed a tricyclic structure of idealized D[sub 2h] symmetry containing an unusual planar 1,4-dithiin unit. The crystals of 1 are monoclinic, space group P2[sub 1]/c. The final R and R[sub w] values were 0.036 and 0.042, respectively. The bicyclic carbon sulfide C[sub 5]S[sub 7], 3, was prepared frommore » reduction of C[sub 4]S[sub 6], 2, with LiBEt[sub 3]H, followed by addition of thiophosgene. Oxidation of Cp[sub 2] Ti([beta]-C[sub 3]S[sub 5]) or Zn([beta]-C[sub 3]S[sub 5])[sub 2][sup 2[minus]] with SO[sub 2]Cl[sub 2] afforded [[beta]-C[sub 3]S[sub 5]][sub n], 4, an orange insoluble solid. Degradation of [[beta]-C[sub 3]S[sub 5]][sub n] with dimethyl acetylenedicarboxylate (DMAD) afforded C[sub 3]S[sub 5][center dot]2DMAD, 5, together with small amounts of C[sub 3]S[sub 5][center dot]3DMAD, 6. The single-crystal X-ray structure of C[sub 3]S[sub 5][center dot]-2DMAD revealed a folded 1,4-dithiin linked to a planar 1,3-dithiole. The least-squares refinement with anisotropic thermal parameters for all non-hydrogen atoms converged at R = 0.036 and R[sub w] = 0.047. The DMAD treatment proceeds in a similar manner with [M([beta]-C[sub 3]S[sub 5])[sub 2]][sup 2[minus]] (M = Zn, Ni) to yield [M(C[sub 3]S[sub 5][center dot]DMAD)[sub 2]][sup 2[minus]]. The C[sub 3]S[sub 5][center dot]DMAD ligand can subsequently be removed from the zinc complex by reaction with thiophosgene giving bicyclic C[sub 4]S[sub 6][center dot]DMAD, which can also be obtained via Cp[sub 2]Ti(C[sub 3]S[sub 5][center dot]DMAD).« less