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Title: Photoelectric properties of In/In{sub 2}Se{sub 3} structures

Abstract

The hexagonal modification of In{sub 2}Se{sub 3} single crystal is grown by planar crystallization from nearly stoichiometric melt and by the vapor-phase method. For the first time, the Schottky barriers In/n-In{sub 2}Se{sub 3}, which are photosensitive in a wide incident-photon energy range of 1-3.8 eV at 300 K, are obtained. The nature of the interband photoactive absorption is studied. The energy-barrier height and interband optical-transition energy are estimated. It is concluded that the grown crystals can be used in broadband optical-radiation converters.

Authors:
; ;  [1];  [2];  [3];  [1]
  1. National University Lvivska Politekhnika (Ukraine)
  2. St. Petersburg State Technical University (Russian Federation), E-mail: rudvas@spbstu.ru
  3. Russian Academy of Sciences, Ioffe Physicotechnucal Institute (Russian Federation)
Publication Date:
OSTI Identifier:
21088460
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 1; Other Information: DOI: 10.1134/S1063782607010125; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; CRYSTALLIZATION; EV RANGE 01-10; INDIUM; INDIUM SELENIDES; MONOCRYSTALS; PHOTONS

Citation Formats

Il'chuk, G. A., Kus'nezh, V. V., Petrus', R. Yu., Rud', V. Yu., Rud', Yu. V., and Ukrainets, V. O.. Photoelectric properties of In/In{sub 2}Se{sub 3} structures. United States: N. p., 2007. Web. doi:10.1134/S1063782607010125.
Il'chuk, G. A., Kus'nezh, V. V., Petrus', R. Yu., Rud', V. Yu., Rud', Yu. V., & Ukrainets, V. O.. Photoelectric properties of In/In{sub 2}Se{sub 3} structures. United States. doi:10.1134/S1063782607010125.
Il'chuk, G. A., Kus'nezh, V. V., Petrus', R. Yu., Rud', V. Yu., Rud', Yu. V., and Ukrainets, V. O.. Mon . "Photoelectric properties of In/In{sub 2}Se{sub 3} structures". United States. doi:10.1134/S1063782607010125.
@article{osti_21088460,
title = {Photoelectric properties of In/In{sub 2}Se{sub 3} structures},
author = {Il'chuk, G. A. and Kus'nezh, V. V. and Petrus', R. Yu. and Rud', V. Yu. and Rud', Yu. V. and Ukrainets, V. O.},
abstractNote = {The hexagonal modification of In{sub 2}Se{sub 3} single crystal is grown by planar crystallization from nearly stoichiometric melt and by the vapor-phase method. For the first time, the Schottky barriers In/n-In{sub 2}Se{sub 3}, which are photosensitive in a wide incident-photon energy range of 1-3.8 eV at 300 K, are obtained. The nature of the interband photoactive absorption is studied. The energy-barrier height and interband optical-transition energy are estimated. It is concluded that the grown crystals can be used in broadband optical-radiation converters.},
doi = {10.1134/S1063782607010125},
journal = {Semiconductors},
number = 1,
volume = 41,
place = {United States},
year = {Mon Jan 15 00:00:00 EST 2007},
month = {Mon Jan 15 00:00:00 EST 2007}
}
  • The reaction of InCl[sub 3] with Na[sub 2]Se[sub 5] in dimethylformamide (DMF) in the presence of Ph[sub 4]PCl gave (Ph[sub 4]P)[sub 4][In[sub 2](Se[sub 4])[sub 4](Se[sub 5])] (I) in 75% yield. Under the same conditions, InCl[sub 3] reacted with Na[sub 2]Se[sub 5] in the presence of Pr[sub 4]NBr or Et[sub 4]NBr and afforded (Pr[sub 4]N)[sub 4][In[sub 2](Se[sub 4])[sub 4](Se[sub 5])] (II) in 65% yield and (Et[sub 4]N)[sub 4][In[sub 2](Se[sub 4])[sub 4](Se[sub 5])] (III) in 72% yield, respectively. Single-crystal X-ray diffraction studies show that (I), (II), and (III) contain the same anion, [In[sub 2](Se[sub 4])[sub 4](Se[sub 5])][sup 4[minus]]. The anion consists ofmore » In[sup 3+] centers in trigonal bipyramidal coordination; each In atom is chelated by two bidentate Se[sub 4][sup 2[minus]] ligands forming a [In(Se[sub 4])[sub 2]][sup [minus]] unit. Two of these [In(Se[sub 4])[sub 2]][sup [minus]] units are bridged by an Se[sub 5][sup 2[minus]] chain forming a dimer. The hydrothermal reaction of InCl[sub 3] with Na[sub 2]Se[sub 4] in the presence of Pr[sub 4]NBr and water at 110[degrees]C for 3 days in an evacuated sealed Pyrex tube afforded deep red crystals of (Pr[sub 4]N)[sub 2][In[sub 2]Se[sub 2](Se[sub 4])[sub 2]] (IV), in 80% yield. Under the same conditions the reaction with [(Ph[sub 3]P)[sub 2]N]Cl yields [(Ph[sub 3]P)[sub 2]N][sub 2][In[sub 2]Se[sub 2](Se[sub 4])[sub 2]] (V) in 60% yield. Single-crystal X-ray diffraction studies show that (IV) and (V) contain the same binuclear anion [In[sub 2]Se[sub 2](Se[sub 4])[sub 2]][sup 2[minus]]. The reaction of InCl[sub 3] with Na[sub 2]Se[sub 5] in 1:2 mole ratio in acetonitrile in the presence of Et[sub 4]NBr afforded (Et[sub 4]N)[sub 3][In[sub 3]Se[sub 3](Se[sub 4])[sub 3]] (VI). Similar reaction of TlCl with Na[sub 2]Se[sub 5] in 1:2 mole ratio in DMF in the presence of Et[sub 4]NBr gave (Et[sub 4]N)[sub 3][Tl[sub 3]Se[sub 3](Se[sub 4])[sub 3]] (VII). 57 refs., 13 figs., 14 tabs.« less
  • The influence of a holmium impurity on the photoelectric properties of bulk and film As{sub 2}Se{sub 3} and (As{sub 2}S{sub 3}){sub 0.3}(As{sub 2}Se{sub 3}){sub 0.7} samples is studied. Measurements of the relative photoconductivity of bulk samples and the spectral distribution of the persistent photoconductivity in film samples showed an increase in the photoconductivity of materials doped with holmium to concentrations equivalent to 0.010-0.015 at %. The spectral distribution of the persistent photoconductivity and optical absorption showed that the band gap monotonically decreases from 1.88 to 1.85 eV for As{sub 2}Se{sub 3} and from 2.05 to 2.00 eV for (As{sub 2}S{submore » 3}){sub 0.3}(As{sub 2}Se{sub 3}){sub 0.7} as Ho concentration increases to 0.015 at %, and then weakly increases to the values in initial pure materials.« less
  • The reaction of (triphos)RhCl(/eta//sup 2/-CSe/sub 2/) (1) in CH/sub 2/Cl/sub 2/ with PEt/sub 3/ gives the phosphoniodiselenoformate complex (triphos)RhCl(Se/sub 2/CPEt/sub 3/) (2). Compound 2 reacts at room temperature in CH/sub 2/Cl/sub 2/ solution with dioxygen to yield OPEt/sub 3/ and (triphos)RhCl(Se/sub 2/CO) (3). The chloride ligand can be removed from 3 in CH/sub 2/Cl/sub 2/ by NaBPh/sub 4/ in 1-butanol to give the 16-electron complex ((triphos)Rh(Se/sub 2/CO))BPh/sub 4/ x 0.5CH/sub 2/Cl/sub 2/ x 0.5C/sub 4/H/sub 9/OH (4), which photochemically or thermally undergoes the chelotropic elimination of CO to form the bis(..mu..-diselenium) complex ((triphos)Rh(..mu..-Se/sub 2/)/sub 2/Rh(triphos))(BPh/sub 4/)/sub 2/ x 2DMF (5b).more » The crystal structures of 4 and 5b have been determined by x-ray crystallography and the results are presented here. The structure consists of monomeric complex cations ((triphos)Rh(Se/sub 2/CO))/sup +/, BPh/sub 4//sup -/ anions, and some amount of CH/sub 2/Cl/sub 2/ and 1-butanol molecules of crystallization. The metal atom is five-coordinated by the three phosphorus atoms of triphos and by the two selenium atoms of the diselenocarbonate ligand in a distorted-square-pyramidal environment. The structure consists of binuclear ((triphos)Rh(..mu..-Se/sub 2/)/sub 2/Rh(triphos))/sup 2 +/ cations, BPh/sub 4//sup -/ anions, and DMF molecules of crystallization. The system consists of two (triphos)Rh(/eta//sup 2/-Se/sub 2/) fragments related by a crystallographic inversion center. Each rhodium atom is coordinated by the three phosphorus atoms of triphos, an /eta//sup 2/-diselenium molecule, and one selenium atom from the other (triphos)Rh(/eta//sup 2/-Se/sub 2/) moiety. 27 references, 3 figures, 5 tables.« less
  • The quasi-ternary system Ag{sub 2}Se–Ga{sub 2}Se{sub 3}–In{sub 2}Se{sub 3} was investigated by differential thermal, X-ray phase, X-ray structure, microstructure analysis and microhardness measurements. Five quasi-binary phase diagrams, six polythermal sections, isothermal section at 820 K and the liquidus surface projection were constructed. The character and temperature of the invariant processes were determined. The specific resistance of the single crystals (Ga{sub 0.6}In{sub 0.4}){sub 2}Se{sub 3}, (Ga{sub 0.594}In{sub 0.396}Er{sub 0.01}){sub 2}Se{sub 3} was measured, 7.5×10{sup 5} and 3.15×10{sup 5} Ω m, respectively, optical absorption spectra in the 600–1050 nm range were recorded at room temperature, and the band gap energy was estimatedmore » which is 1.95±0. 01 eV for both samples. - Graphical abstract: The article reports for the first time the investigated liquidus surface projection of the Ag{sub 2}Se–Ga{sub 2}Se{sub 3}–In{sub 2}Se{sub 3} system and isothermal section at 820 K of the system. Five phase diagrams, six polythermal sections, isothermal section at 820 K and the liquidus surface projection were built at the first time. The existence of the large region of the solid solutions based on AgIn{sub 5}Se{sub 8}, Ga{sub 2}Se{sub 3} and AgGa{sub 1−x}In{sub x}Se{sub 2} was investigated. The existence of two ternary phases was established in the Ga{sub 2}Se{sub 3}–In{sub 2}Se{sub 3} system. Two single crystals (Ga{sub 0.6}In{sub 0.4}){sub 2}Se{sub 3}, (Ga{sub 0.594}In{sub 0.396}Er{sub 0.01}){sub 2}Se{sub 3} were grown and some of optical properties of them were studied at first time. Display Omitted - Highlights: • Liquidus surface projection was built for Ag{sub 2}Se–Ga{sub 2}Se{sub 3}–In{sub 2}Se{sub 3} system. • Solid solution ranges of AgIn{sub 5}Se{sub 8}, Ga{sub 2}Se{sub 3} and AgGa{sub 1−x}In{sub x}Se{sub 2} were investigated. • Two single crystals (Ga{sub 0.6}In{sub 0.4}){sub 2}Se{sub 3}, (Ga{sub 0.594}In{sub 0.396}Er{sub 0.01}){sub 2}Se{sub 3} were grown. • Some optical properties of these single crystals were studied.« less
  • Isothermal sections of the quasi-ternary systems Ag{sub 2}S(Se)–Ga{sub 2}S(Se){sub 3}–In{sub 2}S(Se){sub 3} at 820 K were compared. Along the 50 mol% Ag{sub 2}S(Se), both systems feature continuous solid solutions with the chalcopyrite structure. Along the 17 mol% Ag{sub 2}S(Se), the interactions at the AgIn{sub 5}S(Se){sub 8}–'AgGa{sub 5}S(Se){sub 8}' sections are different. In the Ag{sub 2}S–Ga{sub 2}S{sub 3}–In{sub 2}S{sub 3} system the existence of the layered phase AgGa{sub x}In{sub 5–x}S{sub 8}, 2.25≤x≤2.85, was confirmed (S.G. P6{sub 3}mc). The Ag{sub 2}Se–Ga{sub 2}Se{sub 3}–In{sub 2}Se{sub 3} system features the formation of solid solution (up to 53 mol% Ga{sub 2}Se{sub 3}) based on AgIn{submore » 5}Se{sub 8} (S.G. P-42m). Crystal structure, atomic coordinates were determined by powder diffraction method for samples from the homogeneity region of AgIn{sub 5}Se{sub 8}. Specific conductivities of the crystals Ga{sub 6}In{sub 4}Se{sub 15} (1.33·10{sup −6} Ω{sup −1} m{sup −1}), Ga{sub 5.94}In{sub 3.96}Er{sub 0.1}Se{sub 15} (3.17·10{sup −6} Ω{sup −1} m{sup −1}), Ga{sub 5.5}In{sub 4.5}S{sub 15} (7.94·10{sup −6} Ω{sup −1} m{sup −1}), Ga{sub 5.46}In{sub 4.47}Er{sub 0.07}S{sub 15} (1·10{sup −9} Ω{sup −1} m{sup −1}) were measured at room temperature. Optical absorption and photoconductivity spectra were recorded in the range 400–760 nm. The introduction of erbium leads to an increase in the absorption coefficient and to the appearance of absorption bands at 530, 660, 810, 980, 1530 nm. - Highlights: • Nature of solid solutions in Ag{sub 2}S(Se)–Ga{sub 2}S(Se){sub 3}–In{sub 2}S(Se){sub 3} (820 K) were discussed. • Crystal structures of ternary and quaternary compounds were discussed. • Specific conductivity, optical properties of four single crystals were measured. • Photoconductivity of the Ga{sub 5.5}In{sub 4.5}S{sub 15} in the range 400–760 nm were recorded.« less