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Title: Photoelectric properties of In/In{sub 2}Se{sub 3} structures

Abstract

The hexagonal modification of In{sub 2}Se{sub 3} single crystal is grown by planar crystallization from nearly stoichiometric melt and by the vapor-phase method. For the first time, the Schottky barriers In/n-In{sub 2}Se{sub 3}, which are photosensitive in a wide incident-photon energy range of 1-3.8 eV at 300 K, are obtained. The nature of the interband photoactive absorption is studied. The energy-barrier height and interband optical-transition energy are estimated. It is concluded that the grown crystals can be used in broadband optical-radiation converters.

Authors:
; ;  [1];  [2];  [3];  [1]
  1. National University Lvivska Politekhnika (Ukraine)
  2. St. Petersburg State Technical University (Russian Federation), E-mail: rudvas@spbstu.ru
  3. Russian Academy of Sciences, Ioffe Physicotechnucal Institute (Russian Federation)
Publication Date:
OSTI Identifier:
21088460
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 1; Other Information: DOI: 10.1134/S1063782607010125; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; CRYSTALLIZATION; EV RANGE 01-10; INDIUM; INDIUM SELENIDES; MONOCRYSTALS; PHOTONS

Citation Formats

Il'chuk, G. A., Kus'nezh, V. V., Petrus', R. Yu., Rud', V. Yu., Rud', Yu. V., and Ukrainets, V. O.. Photoelectric properties of In/In{sub 2}Se{sub 3} structures. United States: N. p., 2007. Web. doi:10.1134/S1063782607010125.
Il'chuk, G. A., Kus'nezh, V. V., Petrus', R. Yu., Rud', V. Yu., Rud', Yu. V., & Ukrainets, V. O.. Photoelectric properties of In/In{sub 2}Se{sub 3} structures. United States. doi:10.1134/S1063782607010125.
Il'chuk, G. A., Kus'nezh, V. V., Petrus', R. Yu., Rud', V. Yu., Rud', Yu. V., and Ukrainets, V. O.. Mon . "Photoelectric properties of In/In{sub 2}Se{sub 3} structures". United States. doi:10.1134/S1063782607010125.
@article{osti_21088460,
title = {Photoelectric properties of In/In{sub 2}Se{sub 3} structures},
author = {Il'chuk, G. A. and Kus'nezh, V. V. and Petrus', R. Yu. and Rud', V. Yu. and Rud', Yu. V. and Ukrainets, V. O.},
abstractNote = {The hexagonal modification of In{sub 2}Se{sub 3} single crystal is grown by planar crystallization from nearly stoichiometric melt and by the vapor-phase method. For the first time, the Schottky barriers In/n-In{sub 2}Se{sub 3}, which are photosensitive in a wide incident-photon energy range of 1-3.8 eV at 300 K, are obtained. The nature of the interband photoactive absorption is studied. The energy-barrier height and interband optical-transition energy are estimated. It is concluded that the grown crystals can be used in broadband optical-radiation converters.},
doi = {10.1134/S1063782607010125},
journal = {Semiconductors},
number = 1,
volume = 41,
place = {United States},
year = {Mon Jan 15 00:00:00 EST 2007},
month = {Mon Jan 15 00:00:00 EST 2007}
}