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Title: Specific features of molecules' pyrolysis on the epitaxial surface in the case of growth of the Si{sub 1-x}Ge{sub x} layers from hydrides in vacuum

Abstract

Specific features of molecules' pyrolysis in the case of growth of Si{sub 1-x}Ge{sub x} films from hydrides in vacuum are considered in the context of kinetic approximation on the basis of a growth experiment. The type of solution characteristic of the kinetic problem was studied in relation to the values of the system's parameters for a scheme of decomposition of monohydrides of Si and Ge with a dominant role of SiH{sub 2} and GeH{sub 2} radicals in the pyrolysis process. It is shown for the first time that, in the system under consideration, there can exist at least two types of solutions that differ radically from each other in the rate of incorporations of atoms into the growing layer and in the degree of filling of the surface states with products of molecules' pyrolysis. The type of solution characteristic of the actual experiment is determined from the condition for the segregation-related accumulation of Ge atoms at the growth surface of the Si{sub 1-x}Ge{sub x} film. Numerical analysis performed in relation to the growth temperature made it possible to estimate the rate of the monohydrides' decomposition and the values of the factor of incorporation of Si and Ge adatoms into themore » crystal. The estimate of the characteristic decomposition time for monosilane yields the value of 3-4 s at the growth temperatures of 450-700 deg. C; for monogermane, this value is about 2 s.« less

Authors:
;  [1]
  1. Russian Academy of Sciences, Institute for the Physics of Microstructures (Russian Federation)
Publication Date:
OSTI Identifier:
21088459
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 1; Other Information: DOI: 10.1134/S1063782607010137; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTALS; EPITAXY; FILMS; GERMANIUM ALLOYS; GERMANIUM HYDRIDES; HYDRIDES; LAYERS; NUMERICAL ANALYSIS; PYROLYSIS; SILICON ALLOYS; SILICON COMPOUNDS; SURFACES

Citation Formats

Orlov, L. K., E-mail: orlov@ipm.sci-nnov.ru, and Ivin, S. V. Specific features of molecules' pyrolysis on the epitaxial surface in the case of growth of the Si{sub 1-x}Ge{sub x} layers from hydrides in vacuum. United States: N. p., 2007. Web. doi:10.1134/S1063782607010137.
Orlov, L. K., E-mail: orlov@ipm.sci-nnov.ru, & Ivin, S. V. Specific features of molecules' pyrolysis on the epitaxial surface in the case of growth of the Si{sub 1-x}Ge{sub x} layers from hydrides in vacuum. United States. doi:10.1134/S1063782607010137.
Orlov, L. K., E-mail: orlov@ipm.sci-nnov.ru, and Ivin, S. V. Mon . "Specific features of molecules' pyrolysis on the epitaxial surface in the case of growth of the Si{sub 1-x}Ge{sub x} layers from hydrides in vacuum". United States. doi:10.1134/S1063782607010137.
@article{osti_21088459,
title = {Specific features of molecules' pyrolysis on the epitaxial surface in the case of growth of the Si{sub 1-x}Ge{sub x} layers from hydrides in vacuum},
author = {Orlov, L. K., E-mail: orlov@ipm.sci-nnov.ru and Ivin, S. V.},
abstractNote = {Specific features of molecules' pyrolysis in the case of growth of Si{sub 1-x}Ge{sub x} films from hydrides in vacuum are considered in the context of kinetic approximation on the basis of a growth experiment. The type of solution characteristic of the kinetic problem was studied in relation to the values of the system's parameters for a scheme of decomposition of monohydrides of Si and Ge with a dominant role of SiH{sub 2} and GeH{sub 2} radicals in the pyrolysis process. It is shown for the first time that, in the system under consideration, there can exist at least two types of solutions that differ radically from each other in the rate of incorporations of atoms into the growing layer and in the degree of filling of the surface states with products of molecules' pyrolysis. The type of solution characteristic of the actual experiment is determined from the condition for the segregation-related accumulation of Ge atoms at the growth surface of the Si{sub 1-x}Ge{sub x} film. Numerical analysis performed in relation to the growth temperature made it possible to estimate the rate of the monohydrides' decomposition and the values of the factor of incorporation of Si and Ge adatoms into the crystal. The estimate of the characteristic decomposition time for monosilane yields the value of 3-4 s at the growth temperatures of 450-700 deg. C; for monogermane, this value is about 2 s.},
doi = {10.1134/S1063782607010137},
journal = {Semiconductors},
number = 1,
volume = 41,
place = {United States},
year = {Mon Jan 15 00:00:00 EST 2007},
month = {Mon Jan 15 00:00:00 EST 2007}
}