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Title: Self-ordering of Mg and O isoelectronic impurities in ZnSe

Abstract

Self-ordering of isoelectronic magnesium and oxygen impurities in ZnSe is described. The formation of 1O4 Mg tetrahedral cells in ZnSe-enriched Mg{sub x}Zn{sub 1-x}O{sub y}Se{sub 1-y} alloy (x {>=} 4y) in the ultradilute limit (1 x 10{sup -8} {<=} y {<=} 1 x 10{sup -3}) of oxygen concentrations is predicted. Under certain conditions that are established for the temperatures of growth (300 deg. C) and annealing (500 deg. C), all of the oxygen impurity atoms should be surrounded by Mg atoms only. The origin of this phenomenon is the thermodynamic preference for Mg-O and Zn-Se bond formation compared to Mg-S and Zn-O bonds and a decrease in the elastic-stress energy after self-ordering of the alloy.

Authors:
; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
21088452
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 2; Other Information: DOI: 10.1134/S1063782607020017; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; IMPURITIES; MAGNESIUM; MAGNESIUM ALLOYS; OXYGEN; OXYGEN ADDITIONS; SELENIUM ALLOYS; TEMPERATURE RANGE 0400-1000 K; ZINC ALLOYS; ZINC SELENIDES

Citation Formats

Elyukhina, O. V., E-mail: elyukhina@mail.ioffe.ru, Sokolovskii, G. S., and Kuchinskii, V. I. Self-ordering of Mg and O isoelectronic impurities in ZnSe. United States: N. p., 2007. Web. doi:10.1134/S1063782607020017.
Elyukhina, O. V., E-mail: elyukhina@mail.ioffe.ru, Sokolovskii, G. S., & Kuchinskii, V. I. Self-ordering of Mg and O isoelectronic impurities in ZnSe. United States. doi:10.1134/S1063782607020017.
Elyukhina, O. V., E-mail: elyukhina@mail.ioffe.ru, Sokolovskii, G. S., and Kuchinskii, V. I. Thu . "Self-ordering of Mg and O isoelectronic impurities in ZnSe". United States. doi:10.1134/S1063782607020017.
@article{osti_21088452,
title = {Self-ordering of Mg and O isoelectronic impurities in ZnSe},
author = {Elyukhina, O. V., E-mail: elyukhina@mail.ioffe.ru and Sokolovskii, G. S. and Kuchinskii, V. I.},
abstractNote = {Self-ordering of isoelectronic magnesium and oxygen impurities in ZnSe is described. The formation of 1O4 Mg tetrahedral cells in ZnSe-enriched Mg{sub x}Zn{sub 1-x}O{sub y}Se{sub 1-y} alloy (x {>=} 4y) in the ultradilute limit (1 x 10{sup -8} {<=} y {<=} 1 x 10{sup -3}) of oxygen concentrations is predicted. Under certain conditions that are established for the temperatures of growth (300 deg. C) and annealing (500 deg. C), all of the oxygen impurity atoms should be surrounded by Mg atoms only. The origin of this phenomenon is the thermodynamic preference for Mg-O and Zn-Se bond formation compared to Mg-S and Zn-O bonds and a decrease in the elastic-stress energy after self-ordering of the alloy.},
doi = {10.1134/S1063782607020017},
journal = {Semiconductors},
number = 2,
volume = 41,
place = {United States},
year = {Thu Feb 15 00:00:00 EST 2007},
month = {Thu Feb 15 00:00:00 EST 2007}
}