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Title: Electrical properties of isotype N{sup +}-GaSb/n{sup 0}-GaInAsSb/N{sup +}-GaAlAsSb type-II heterojunctions

Abstract

Band diagrams and current-voltage and capacitance-voltage characteristics of isotype N{sup +}-GaSb/n{sup 0}-GaInAsSb/N{sup +}-GaAlAsSb heterostructures have been studied. Dark-current flow mechanisms have been analyzed. It is shown that a staggered type-II heterojunction can behave as a Schottky diode and its current-voltage characteristics exhibit rectifying properties over the entire temperature range 90-300 K. The thermionic-emission current predominates at high temperatures and low voltages. This current is due to thermal excitation of electrons from GaInAsSb to GaSb over the barrier at the heterointerface. A comparison of the relevant theoretical and experimental data confirmed that the tunneling charge transport mechanism plays the key role at low temperatures under both forward and reverse biases.

Authors:
 [1]; ; ; ;  [2]
  1. Uludag University, Department of Physics (Turkey), E-mail: afrailov@uludag.edu.tr
  2. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
21088448
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 2; Other Information: DOI: 10.1134/S1063782607020066; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY ALLOYS; ARSENIC ALLOYS; CAPACITANCE; CHARGE TRANSPORT; ELECTRONIC STRUCTURE; EXCITATION; GALLIUM ALLOYS; GALLIUM ANTIMONIDES; HETEROJUNCTIONS; INDIUM ALLOYS; NITROGEN IONS; SCHOTTKY BARRIER DIODES; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THERMIONIC EMISSION; TUNNEL EFFECT

Citation Formats

Ahmetoglu, M. A., Andreev, I. A., E-mail: igor@iropt9.ioffe.ru, Kunitsyna, E. V., Mikhailova, M. P., and Yakovlev, Yu. P. Electrical properties of isotype N{sup +}-GaSb/n{sup 0}-GaInAsSb/N{sup +}-GaAlAsSb type-II heterojunctions. United States: N. p., 2007. Web. doi:10.1134/S1063782607020066.
Ahmetoglu, M. A., Andreev, I. A., E-mail: igor@iropt9.ioffe.ru, Kunitsyna, E. V., Mikhailova, M. P., & Yakovlev, Yu. P. Electrical properties of isotype N{sup +}-GaSb/n{sup 0}-GaInAsSb/N{sup +}-GaAlAsSb type-II heterojunctions. United States. doi:10.1134/S1063782607020066.
Ahmetoglu, M. A., Andreev, I. A., E-mail: igor@iropt9.ioffe.ru, Kunitsyna, E. V., Mikhailova, M. P., and Yakovlev, Yu. P. Thu . "Electrical properties of isotype N{sup +}-GaSb/n{sup 0}-GaInAsSb/N{sup +}-GaAlAsSb type-II heterojunctions". United States. doi:10.1134/S1063782607020066.
@article{osti_21088448,
title = {Electrical properties of isotype N{sup +}-GaSb/n{sup 0}-GaInAsSb/N{sup +}-GaAlAsSb type-II heterojunctions},
author = {Ahmetoglu, M. A. and Andreev, I. A., E-mail: igor@iropt9.ioffe.ru and Kunitsyna, E. V. and Mikhailova, M. P. and Yakovlev, Yu. P.},
abstractNote = {Band diagrams and current-voltage and capacitance-voltage characteristics of isotype N{sup +}-GaSb/n{sup 0}-GaInAsSb/N{sup +}-GaAlAsSb heterostructures have been studied. Dark-current flow mechanisms have been analyzed. It is shown that a staggered type-II heterojunction can behave as a Schottky diode and its current-voltage characteristics exhibit rectifying properties over the entire temperature range 90-300 K. The thermionic-emission current predominates at high temperatures and low voltages. This current is due to thermal excitation of electrons from GaInAsSb to GaSb over the barrier at the heterointerface. A comparison of the relevant theoretical and experimental data confirmed that the tunneling charge transport mechanism plays the key role at low temperatures under both forward and reverse biases.},
doi = {10.1134/S1063782607020066},
journal = {Semiconductors},
number = 2,
volume = 41,
place = {United States},
year = {Thu Feb 15 00:00:00 EST 2007},
month = {Thu Feb 15 00:00:00 EST 2007}
}
  • The results of detailed study of the magnetotransport properties of broken-gap type II heterojunctions in a GaInAsSb/InAs(GaSb) system are reported. An electron channel with a high charge-carrier mobility (as high as 50000-60000 cm{sup 2}/(V s)) is observed and studied for the first time in an isotype broken-gap p-GaInAsSb/p-InAs heterostructure. The effects of electron-channel depletion and semimetal-semiconductor transition in the case of heavy doping of the quaternary alloy with acceptors are studied. Magnetotransport properties at temperatures of 4.2-200 K are studied in detail. Data on the energy spectrum and parameters of two-dimensional charge carriers at the heteroboundary are obtained. It ismore » ascertained experimentally that, depending on the composition, either staggered (at x = 0.85) or broken-gap (at x = 0.95) heterojunctions can be formed in the Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/GaSb, which is confirmed by theoretical calculations. The anomalous Hall effect and negative magnetoresistance were observed in GaInAsSb/InAs:Mn grown on substrates doped heavily with Mn magnetic acceptor impurity so that the hole concentration was as high as p > 5 x 10{sup 18} cm{sup -3}; these phenomena are caused by exchange interaction of Mn ions in InAs with high-mobility charge carriers in the electron channel at the heterointerface.« less
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  • Optical properties of molecular beam epitaxially grown type II “W” shaped GaSb/AlSb/InAs/GaIn(As)Sb/InAs/AlSb/GaSb quantum wells (QWs) designed for the active region of interband cascade lasers have been investigated. Temperature dependence of Fourier-transformed photoluminescence and photoreflectance was employed to probe the effects of addition of arsenic into the original ternary valence band well of GaInSb. It is revealed that adding arsenic provides an additional degree of freedom in terms of band alignment and strain tailoring and allows enhancing the oscillator strength of the active type II transition. On the other hand, however, arsenic incorporation apparently also affects the structural and optical materialmore » quality via generating carrier trapping states at the interfaces, which can deteriorate the radiative efficiency. These have been evidenced in several spectroscopic features and are also confirmed by cross-sectional transmission electron microscopy images. While arsenic incorporation into type II QWs is a powerful heterostructure engineering tool for optoelectronic devices, a compromise has to be found between ideal band structure properties and high quality morphological properties.« less
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