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Title: Electrical properties of isotype N{sup +}-GaSb/n{sup 0}-GaInAsSb/N{sup +}-GaAlAsSb type-II heterojunctions

Abstract

Band diagrams and current-voltage and capacitance-voltage characteristics of isotype N{sup +}-GaSb/n{sup 0}-GaInAsSb/N{sup +}-GaAlAsSb heterostructures have been studied. Dark-current flow mechanisms have been analyzed. It is shown that a staggered type-II heterojunction can behave as a Schottky diode and its current-voltage characteristics exhibit rectifying properties over the entire temperature range 90-300 K. The thermionic-emission current predominates at high temperatures and low voltages. This current is due to thermal excitation of electrons from GaInAsSb to GaSb over the barrier at the heterointerface. A comparison of the relevant theoretical and experimental data confirmed that the tunneling charge transport mechanism plays the key role at low temperatures under both forward and reverse biases.

Authors:
 [1]; ; ; ;  [2]
  1. Uludag University, Department of Physics (Turkey), E-mail: afrailov@uludag.edu.tr
  2. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
21088448
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 2; Other Information: DOI: 10.1134/S1063782607020066; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY ALLOYS; ARSENIC ALLOYS; CAPACITANCE; CHARGE TRANSPORT; ELECTRONIC STRUCTURE; EXCITATION; GALLIUM ALLOYS; GALLIUM ANTIMONIDES; HETEROJUNCTIONS; INDIUM ALLOYS; NITROGEN IONS; SCHOTTKY BARRIER DIODES; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THERMIONIC EMISSION; TUNNEL EFFECT

Citation Formats

Ahmetoglu, M. A., Andreev, I. A., E-mail: igor@iropt9.ioffe.ru, Kunitsyna, E. V., Mikhailova, M. P., and Yakovlev, Yu. P.. Electrical properties of isotype N{sup +}-GaSb/n{sup 0}-GaInAsSb/N{sup +}-GaAlAsSb type-II heterojunctions. United States: N. p., 2007. Web. doi:10.1134/S1063782607020066.
Ahmetoglu, M. A., Andreev, I. A., E-mail: igor@iropt9.ioffe.ru, Kunitsyna, E. V., Mikhailova, M. P., & Yakovlev, Yu. P.. Electrical properties of isotype N{sup +}-GaSb/n{sup 0}-GaInAsSb/N{sup +}-GaAlAsSb type-II heterojunctions. United States. doi:10.1134/S1063782607020066.
Ahmetoglu, M. A., Andreev, I. A., E-mail: igor@iropt9.ioffe.ru, Kunitsyna, E. V., Mikhailova, M. P., and Yakovlev, Yu. P.. Thu . "Electrical properties of isotype N{sup +}-GaSb/n{sup 0}-GaInAsSb/N{sup +}-GaAlAsSb type-II heterojunctions". United States. doi:10.1134/S1063782607020066.
@article{osti_21088448,
title = {Electrical properties of isotype N{sup +}-GaSb/n{sup 0}-GaInAsSb/N{sup +}-GaAlAsSb type-II heterojunctions},
author = {Ahmetoglu, M. A. and Andreev, I. A., E-mail: igor@iropt9.ioffe.ru and Kunitsyna, E. V. and Mikhailova, M. P. and Yakovlev, Yu. P.},
abstractNote = {Band diagrams and current-voltage and capacitance-voltage characteristics of isotype N{sup +}-GaSb/n{sup 0}-GaInAsSb/N{sup +}-GaAlAsSb heterostructures have been studied. Dark-current flow mechanisms have been analyzed. It is shown that a staggered type-II heterojunction can behave as a Schottky diode and its current-voltage characteristics exhibit rectifying properties over the entire temperature range 90-300 K. The thermionic-emission current predominates at high temperatures and low voltages. This current is due to thermal excitation of electrons from GaInAsSb to GaSb over the barrier at the heterointerface. A comparison of the relevant theoretical and experimental data confirmed that the tunneling charge transport mechanism plays the key role at low temperatures under both forward and reverse biases.},
doi = {10.1134/S1063782607020066},
journal = {Semiconductors},
number = 2,
volume = 41,
place = {United States},
year = {Thu Feb 15 00:00:00 EST 2007},
month = {Thu Feb 15 00:00:00 EST 2007}
}