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Title: Transition from the type-II broken-gap heterojunction to the staggered one in the GaInAsSb/InAs(GaSb) system

Abstract

Conditions for the transition from the staggered heterojunction to the type-II broken-gap one were considered for isolated Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/InAs(GaSb) heterostructures in relation to the quaternary alloy composition. Energy-band diagrams of such heterojunctions were estimated and energy band offsets {delta} at the heterointerface were determined. It was experimentally found that the type-II broken-gap heterojunction in the Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/p-InAs structure is observed in the entire range of composition parameters under study, 0.03 < x < 0.23, and becomes staggered in the range 0.3 < x < 1. In p-Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/p-GaSb heterostructures with the indium content 0.85 < x < 0.92 in the solid phase, the p-type conductivity is observed, which is indicative of the staggered heterojunction. At x > 0.92, the contribution of electrons of the semimetal channel at the heterointerface to the total conductivity was observed, as well as the transition from the staggered heterojunction to the type-II broken-gap one.

Authors:
; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
21088446
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 2; Other Information: DOI: 10.1134/S1063782607020091; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY ALLOYS; ARSENIC ALLOYS; ELECTRONIC STRUCTURE; GALLIUM ALLOYS; GALLIUM ANTIMONIDES; HETEROJUNCTIONS; INDIUM ALLOYS; INDIUM ARSENIDES; QUATERNARY ALLOY SYSTEMS

Citation Formats

Mikhailova, M. P., Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru, Voronina, T. I., Lagunova, T. S., and Yakovlev, Yu. P. Transition from the type-II broken-gap heterojunction to the staggered one in the GaInAsSb/InAs(GaSb) system. United States: N. p., 2007. Web. doi:10.1134/S1063782607020091.
Mikhailova, M. P., Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru, Voronina, T. I., Lagunova, T. S., & Yakovlev, Yu. P. Transition from the type-II broken-gap heterojunction to the staggered one in the GaInAsSb/InAs(GaSb) system. United States. doi:10.1134/S1063782607020091.
Mikhailova, M. P., Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru, Voronina, T. I., Lagunova, T. S., and Yakovlev, Yu. P. Thu . "Transition from the type-II broken-gap heterojunction to the staggered one in the GaInAsSb/InAs(GaSb) system". United States. doi:10.1134/S1063782607020091.
@article{osti_21088446,
title = {Transition from the type-II broken-gap heterojunction to the staggered one in the GaInAsSb/InAs(GaSb) system},
author = {Mikhailova, M. P. and Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru and Voronina, T. I. and Lagunova, T. S. and Yakovlev, Yu. P.},
abstractNote = {Conditions for the transition from the staggered heterojunction to the type-II broken-gap one were considered for isolated Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/InAs(GaSb) heterostructures in relation to the quaternary alloy composition. Energy-band diagrams of such heterojunctions were estimated and energy band offsets {delta} at the heterointerface were determined. It was experimentally found that the type-II broken-gap heterojunction in the Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/p-InAs structure is observed in the entire range of composition parameters under study, 0.03 < x < 0.23, and becomes staggered in the range 0.3 < x < 1. In p-Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/p-GaSb heterostructures with the indium content 0.85 < x < 0.92 in the solid phase, the p-type conductivity is observed, which is indicative of the staggered heterojunction. At x > 0.92, the contribution of electrons of the semimetal channel at the heterointerface to the total conductivity was observed, as well as the transition from the staggered heterojunction to the type-II broken-gap one.},
doi = {10.1134/S1063782607020091},
journal = {Semiconductors},
number = 2,
volume = 41,
place = {United States},
year = {Thu Feb 15 00:00:00 EST 2007},
month = {Thu Feb 15 00:00:00 EST 2007}
}