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Title: Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers

Abstract

A frequency-dependent impedance analysis (0.1-50 GHz) of an InGaAs/InAlAs-based resonant tunneling diode with a 5-nm-wide well and 5-nm-thick barriers showed that the transport mechanism in such a diode is mostly sequential, rather than coherent, which is consistent with estimates. The possibility of determining the coherent and sequential mechanism fractions in the electron transport through the resonant tunneling diode by its frequency dependence on the impedance is discussed.

Authors:
;  [1];  [2]; ; ; ;  [3]
  1. Russian Academy of Sciences (Fryazino Branch), Institute of Radio Engineering and Electronics (Russian Federation)
  2. Pulsar Research Institute (Russian Federation)
  3. Gerhard-Mercator-University, Solid State Electronics Department (Germany)
Publication Date:
OSTI Identifier:
21088436
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 2; Other Information: DOI: 10.1134/S1063782607020212; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; CHARGE TRANSPORT; ELECTRONS; FREQUENCY DEPENDENCE; GALLIUM ARSENIDES; GHZ RANGE 01-100; IMPEDANCE; INDIUM ARSENIDES; TUNNEL DIODES

Citation Formats

Alkeev, N. V., E-mail: alkeev@ms.ire.rssi.ru, Averin, S. V., Dorofeev, A. A., Velling, P., Khorenko, E., Prost, W., and Tegude, F. J.. Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers. United States: N. p., 2007. Web. doi:10.1134/S1063782607020212.
Alkeev, N. V., E-mail: alkeev@ms.ire.rssi.ru, Averin, S. V., Dorofeev, A. A., Velling, P., Khorenko, E., Prost, W., & Tegude, F. J.. Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers. United States. doi:10.1134/S1063782607020212.
Alkeev, N. V., E-mail: alkeev@ms.ire.rssi.ru, Averin, S. V., Dorofeev, A. A., Velling, P., Khorenko, E., Prost, W., and Tegude, F. J.. Thu . "Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers". United States. doi:10.1134/S1063782607020212.
@article{osti_21088436,
title = {Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers},
author = {Alkeev, N. V., E-mail: alkeev@ms.ire.rssi.ru and Averin, S. V. and Dorofeev, A. A. and Velling, P. and Khorenko, E. and Prost, W. and Tegude, F. J.},
abstractNote = {A frequency-dependent impedance analysis (0.1-50 GHz) of an InGaAs/InAlAs-based resonant tunneling diode with a 5-nm-wide well and 5-nm-thick barriers showed that the transport mechanism in such a diode is mostly sequential, rather than coherent, which is consistent with estimates. The possibility of determining the coherent and sequential mechanism fractions in the electron transport through the resonant tunneling diode by its frequency dependence on the impedance is discussed.},
doi = {10.1134/S1063782607020212},
journal = {Semiconductors},
number = 2,
volume = 41,
place = {United States},
year = {Thu Feb 15 00:00:00 EST 2007},
month = {Thu Feb 15 00:00:00 EST 2007}
}