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Title: Negative luminescence and devices based on this phenomenon

Abstract

Recent publications concerned with infrared emitters whose electrical modulation results in absorption of radiation detected as negative luminescence are reviewed. The main properties of the devices based on this phenomenon are analyzed.

Authors:
;  [1]
  1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation), E-mail: bmat@iropt3.ioffe.rssi.ru
Publication Date:
OSTI Identifier:
21088110
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 3; Other Information: DOI: 10.1134/S1063782607030013; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; EQUIPMENT; LUMINESCENCE; MODULATION

Citation Formats

Ivanov-Omskii, V. I., and Matveev, B. A. Negative luminescence and devices based on this phenomenon. United States: N. p., 2007. Web. doi:10.1134/S1063782607030013.
Ivanov-Omskii, V. I., & Matveev, B. A. Negative luminescence and devices based on this phenomenon. United States. doi:10.1134/S1063782607030013.
Ivanov-Omskii, V. I., and Matveev, B. A. Thu . "Negative luminescence and devices based on this phenomenon". United States. doi:10.1134/S1063782607030013.
@article{osti_21088110,
title = {Negative luminescence and devices based on this phenomenon},
author = {Ivanov-Omskii, V. I. and Matveev, B. A.},
abstractNote = {Recent publications concerned with infrared emitters whose electrical modulation results in absorption of radiation detected as negative luminescence are reviewed. The main properties of the devices based on this phenomenon are analyzed.},
doi = {10.1134/S1063782607030013},
journal = {Semiconductors},
number = 3,
volume = 41,
place = {United States},
year = {Thu Mar 15 00:00:00 EDT 2007},
month = {Thu Mar 15 00:00:00 EDT 2007}
}