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Title: The shape of the signals of transient photoconductivity in silicon doped with gold or sulfur

Abstract

Experimental results of studying the photoconductivity kinetics in silicon doped with either gold or sulfur are reported. The nonequilibrium charge-carrier concentration was generated by the effect of pulsed laser radiation. The time dependence of nonequilibrium conductivity was determined by contactless measurements from a variation in the reflected power of the microwave field. The long-term photoconductivity with the time constant of {tau} {approx} 1.6 ms at room temperature is observed in the silicon samples overcompensated with sulfur. Conventional short-term processes ({tau} {approx} 2-3 {mu}s) characteristic of the centers with deep levels are observed in the silicon samples doped with gold. These differences are accounted for using the known data on the energy characteristics of the gold and sulfur levels in the silicon band gap and their charge states.

Authors:
; ; ; ;  [1]
  1. State University, Moscow Institute of Engineering Physics (Russian Federation)
Publication Date:
OSTI Identifier:
21088109
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 3; Other Information: DOI: 10.1134/S1063782607030025; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DOPED MATERIALS; GOLD; LASER RADIATION; PHOTOCONDUCTIVITY; SILICON; SULFUR; TEMPERATURE RANGE 0273-0400 K

Citation Formats

Kiryukhin, A. D., Grigor'ev, V. V., Zuev, A. V., Zuev, V. V., E-mail: VVZuev@mephi.ru, and Korolev, N. A. The shape of the signals of transient photoconductivity in silicon doped with gold or sulfur. United States: N. p., 2007. Web. doi:10.1134/S1063782607030025.
Kiryukhin, A. D., Grigor'ev, V. V., Zuev, A. V., Zuev, V. V., E-mail: VVZuev@mephi.ru, & Korolev, N. A. The shape of the signals of transient photoconductivity in silicon doped with gold or sulfur. United States. doi:10.1134/S1063782607030025.
Kiryukhin, A. D., Grigor'ev, V. V., Zuev, A. V., Zuev, V. V., E-mail: VVZuev@mephi.ru, and Korolev, N. A. Thu . "The shape of the signals of transient photoconductivity in silicon doped with gold or sulfur". United States. doi:10.1134/S1063782607030025.
@article{osti_21088109,
title = {The shape of the signals of transient photoconductivity in silicon doped with gold or sulfur},
author = {Kiryukhin, A. D. and Grigor'ev, V. V. and Zuev, A. V. and Zuev, V. V., E-mail: VVZuev@mephi.ru and Korolev, N. A.},
abstractNote = {Experimental results of studying the photoconductivity kinetics in silicon doped with either gold or sulfur are reported. The nonequilibrium charge-carrier concentration was generated by the effect of pulsed laser radiation. The time dependence of nonequilibrium conductivity was determined by contactless measurements from a variation in the reflected power of the microwave field. The long-term photoconductivity with the time constant of {tau} {approx} 1.6 ms at room temperature is observed in the silicon samples overcompensated with sulfur. Conventional short-term processes ({tau} {approx} 2-3 {mu}s) characteristic of the centers with deep levels are observed in the silicon samples doped with gold. These differences are accounted for using the known data on the energy characteristics of the gold and sulfur levels in the silicon band gap and their charge states.},
doi = {10.1134/S1063782607030025},
journal = {Semiconductors},
number = 3,
volume = 41,
place = {United States},
year = {Thu Mar 15 00:00:00 EDT 2007},
month = {Thu Mar 15 00:00:00 EDT 2007}
}
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