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Title: Role of spontaneous polarization in formation of heterojunctions from silicon carbide polytypes

Abstract

Solution of the Poisson equation is analyzed in terms of the model of a completely depleted contact layer for a heterojunction having as one of its components a noncubic silicon carbide polytype that exhibits a spontaneous polarization P{sub sp}. It is shown that consideration of P{sub sp} leads to broadening of the space charge regions. It is demonstrated that an isotype p-p junction with a quantum well in the valence band of the 3C polytype at the interface with the H-SiC polytype can serve as a model object for studies of the effect exerted by the spontaneous polarization on the properties of SiC heterojunctions. The possibility of a noticeable effect of P{sub sp} on the ground-state energy of an electron in the well is demonstrated for the model with a triangular potential well.

Authors:
;  [1];  [2]
  1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
  2. St. Petersburg State Electrotechnical University (Russian Federation)
Publication Date:
OSTI Identifier:
21088103
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 3; Other Information: DOI: 10.1134/S1063782607030116; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; HETEROJUNCTIONS; POISSON EQUATION; POLARIZATION; QUANTUM WELLS; SILICON CARBIDES

Citation Formats

Davydov, S. Yu., E-mail: Sergei.Davydov@mail.ioffe.ru, Lebedev, A. A., and Troshin, A. V. Role of spontaneous polarization in formation of heterojunctions from silicon carbide polytypes. United States: N. p., 2007. Web. doi:10.1134/S1063782607030116.
Davydov, S. Yu., E-mail: Sergei.Davydov@mail.ioffe.ru, Lebedev, A. A., & Troshin, A. V. Role of spontaneous polarization in formation of heterojunctions from silicon carbide polytypes. United States. doi:10.1134/S1063782607030116.
Davydov, S. Yu., E-mail: Sergei.Davydov@mail.ioffe.ru, Lebedev, A. A., and Troshin, A. V. Thu . "Role of spontaneous polarization in formation of heterojunctions from silicon carbide polytypes". United States. doi:10.1134/S1063782607030116.
@article{osti_21088103,
title = {Role of spontaneous polarization in formation of heterojunctions from silicon carbide polytypes},
author = {Davydov, S. Yu., E-mail: Sergei.Davydov@mail.ioffe.ru and Lebedev, A. A. and Troshin, A. V.},
abstractNote = {Solution of the Poisson equation is analyzed in terms of the model of a completely depleted contact layer for a heterojunction having as one of its components a noncubic silicon carbide polytype that exhibits a spontaneous polarization P{sub sp}. It is shown that consideration of P{sub sp} leads to broadening of the space charge regions. It is demonstrated that an isotype p-p junction with a quantum well in the valence band of the 3C polytype at the interface with the H-SiC polytype can serve as a model object for studies of the effect exerted by the spontaneous polarization on the properties of SiC heterojunctions. The possibility of a noticeable effect of P{sub sp} on the ground-state energy of an electron in the well is demonstrated for the model with a triangular potential well.},
doi = {10.1134/S1063782607030116},
journal = {Semiconductors},
number = 3,
volume = 41,
place = {United States},
year = {Thu Mar 15 00:00:00 EDT 2007},
month = {Thu Mar 15 00:00:00 EDT 2007}
}
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