# A mathematical simulation of the effect of the bistability of current characteristics in nanosized multiple-layer heavily doped heterostructures

## Abstract

Simulation methods based on the energy-balance equation are used to study the electrical conductivity of layered nanosized heterostructures in high electric fields. A quasi-hydrodynamic description of the electron drift is used with regard to the diffusion and thermal-diffusion components of the current, the divergence of the electron heat flux, and the temperature dependence of the electron mobility and energy relaxation time. Current-voltage characteristics are obtained for a layered heterostructure with a barrier height of 0.3 eV and with lengths of both the narrow-and wide-gap layers equal to 50 nm. Depending on the doping level in the range (5-1) x 10{sup 17} cm{sup -3}, the characteristics exhibit either a sharp peak of the differential conductivity or a bistability loop corresponding to the thermal-injection instability. A physical model is suggested that attributes the shape of the calculated current-voltage characteristics to the cumulative effect of the electrostatic lowering of the heterobarrier height and the increase in electron temperature near the injecting heteroboundaries.

- Authors:

- Russian Academy of Sciences, Institute of Radio Engineering and Electronics (Russian Federation), E-mail: yamt@mail.ru

- Publication Date:

- OSTI Identifier:
- 21088101

- Resource Type:
- Journal Article

- Resource Relation:
- Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 3; Other Information: DOI: 10.1134/S1063782607030141; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)

- Country of Publication:
- United States

- Language:
- English

- Subject:
- 36 MATERIALS SCIENCE; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRON DRIFT; ELECTRON MOBILITY; LAYERS; MILLI EV RANGE; NANOSTRUCTURES; SIMULATION; TEMPERATURE DEPENDENCE; THERMAL DIFFUSION

### Citation Formats

```
Gergel', V. A., E-mail: vgergel@mail.ru, Zelenyi, A. P., and Yakupov, M. N.
```*A mathematical simulation of the effect of the bistability of current characteristics in nanosized multiple-layer heavily doped heterostructures*. United States: N. p., 2007.
Web. doi:10.1134/S1063782607030141.

```
Gergel', V. A., E-mail: vgergel@mail.ru, Zelenyi, A. P., & Yakupov, M. N.
```*A mathematical simulation of the effect of the bistability of current characteristics in nanosized multiple-layer heavily doped heterostructures*. United States. doi:10.1134/S1063782607030141.

```
Gergel', V. A., E-mail: vgergel@mail.ru, Zelenyi, A. P., and Yakupov, M. N. Thu .
"A mathematical simulation of the effect of the bistability of current characteristics in nanosized multiple-layer heavily doped heterostructures". United States.
doi:10.1134/S1063782607030141.
```

```
@article{osti_21088101,
```

title = {A mathematical simulation of the effect of the bistability of current characteristics in nanosized multiple-layer heavily doped heterostructures},

author = {Gergel', V. A., E-mail: vgergel@mail.ru and Zelenyi, A. P. and Yakupov, M. N.},

abstractNote = {Simulation methods based on the energy-balance equation are used to study the electrical conductivity of layered nanosized heterostructures in high electric fields. A quasi-hydrodynamic description of the electron drift is used with regard to the diffusion and thermal-diffusion components of the current, the divergence of the electron heat flux, and the temperature dependence of the electron mobility and energy relaxation time. Current-voltage characteristics are obtained for a layered heterostructure with a barrier height of 0.3 eV and with lengths of both the narrow-and wide-gap layers equal to 50 nm. Depending on the doping level in the range (5-1) x 10{sup 17} cm{sup -3}, the characteristics exhibit either a sharp peak of the differential conductivity or a bistability loop corresponding to the thermal-injection instability. A physical model is suggested that attributes the shape of the calculated current-voltage characteristics to the cumulative effect of the electrostatic lowering of the heterobarrier height and the increase in electron temperature near the injecting heteroboundaries.},

doi = {10.1134/S1063782607030141},

journal = {Semiconductors},

number = 3,

volume = 41,

place = {United States},

year = {Thu Mar 15 00:00:00 EDT 2007},

month = {Thu Mar 15 00:00:00 EDT 2007}

}