skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Resonance modulation of the intersubband electron-electron interaction in an AlSb({delta}-Te)/InAs/AsSb({delta}-Te) quantum well by magnetic field

Abstract

The amplitude-frequency modulation of oscillations of the magnetoresistance of 2D electrons in an AlSb({delta}-Te)/InAs/AsSb({delta}-Te) quantum well is studied. In the dependence of the amplitude of the oscillations {delta}(1/B){sub T=const}, regions of negative Dingle temperature are observed. The anomalies in the dependence {delta}(1/B){sub T=const} are attributed to the fact that the quantizing magnetic field resonantly induces intersubband electron-electron interaction between the 2D electrons of the ground size-quantization subband and excited subband. The resonance fields B and the times corresponding to the collision-related broadening of the Landau levels are estimated. The concentration threshold of filling of the excited size-quantization subband is established at a level of n{sub s} {approx} 8 x 10{sup 11} cm{sup -2}.

Authors:
 [1]; ; ; ;  [2]
  1. Esenin State Pedagogical University (Russian Federation), E-mail: kadush@rspu.ryazan.ru
  2. Arizona State University, Department of Electrical Engineering and Center of Solid State Electronic Research (United States)
Publication Date:
OSTI Identifier:
21088099
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 3; Other Information: DOI: 10.1134/S1063782607030165; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; ANTIMONIDES; ELECTRON-ELECTRON COLLISIONS; ELECTRON-ELECTRON COUPLING; ELECTRON-ELECTRON INTERACTIONS; FREQUENCY MODULATION; INDIUM ARSENIDES; MAGNETIC FIELDS; MAGNETORESISTANCE; QUANTIZATION; QUANTUM WELLS; TELLURIDES

Citation Formats

Kadushkin, V. I., Sadof'ev, Yu. G., Bird, J. P., Johnson, S. R., and Zhang, Y.-H. Resonance modulation of the intersubband electron-electron interaction in an AlSb({delta}-Te)/InAs/AsSb({delta}-Te) quantum well by magnetic field. United States: N. p., 2007. Web. doi:10.1134/S1063782607030165.
Kadushkin, V. I., Sadof'ev, Yu. G., Bird, J. P., Johnson, S. R., & Zhang, Y.-H. Resonance modulation of the intersubband electron-electron interaction in an AlSb({delta}-Te)/InAs/AsSb({delta}-Te) quantum well by magnetic field. United States. doi:10.1134/S1063782607030165.
Kadushkin, V. I., Sadof'ev, Yu. G., Bird, J. P., Johnson, S. R., and Zhang, Y.-H. Thu . "Resonance modulation of the intersubband electron-electron interaction in an AlSb({delta}-Te)/InAs/AsSb({delta}-Te) quantum well by magnetic field". United States. doi:10.1134/S1063782607030165.
@article{osti_21088099,
title = {Resonance modulation of the intersubband electron-electron interaction in an AlSb({delta}-Te)/InAs/AsSb({delta}-Te) quantum well by magnetic field},
author = {Kadushkin, V. I. and Sadof'ev, Yu. G. and Bird, J. P. and Johnson, S. R. and Zhang, Y.-H.},
abstractNote = {The amplitude-frequency modulation of oscillations of the magnetoresistance of 2D electrons in an AlSb({delta}-Te)/InAs/AsSb({delta}-Te) quantum well is studied. In the dependence of the amplitude of the oscillations {delta}(1/B){sub T=const}, regions of negative Dingle temperature are observed. The anomalies in the dependence {delta}(1/B){sub T=const} are attributed to the fact that the quantizing magnetic field resonantly induces intersubband electron-electron interaction between the 2D electrons of the ground size-quantization subband and excited subband. The resonance fields B and the times corresponding to the collision-related broadening of the Landau levels are estimated. The concentration threshold of filling of the excited size-quantization subband is established at a level of n{sub s} {approx} 8 x 10{sup 11} cm{sup -2}.},
doi = {10.1134/S1063782607030165},
journal = {Semiconductors},
number = 3,
volume = 41,
place = {United States},
year = {Thu Mar 15 00:00:00 EDT 2007},
month = {Thu Mar 15 00:00:00 EDT 2007}
}
  • We report observation of electron-electron (e-e) interaction effect on cyclotron resonance (CR) in InAs/AlSb quantum well heterostructures. High mobility values allow us to observe strongly pronounced triple splitting of CR line at noninteger filling factors of Landau levels ν. At magnetic fields, corresponding to ν > 4, experimental values of CR energies are in good agreement with single-electron calculations on the basis of eight-band k ⋅ p Hamiltonian. In the range of filling factors 3 < ν < 4 pronounced, splitting of CR line, exceeding significantly the difference in single-electron CR energies, is discovered. The strength of the splitting increases when occupation of the partially filledmore » Landau level tends to a half, being in qualitative agreement with previous prediction by MacDonald and Kallin [Phys. Rev. B 40, 5795 (1989)]. We demonstrate that such behaviour of CR modes can be quantitatively described if one takes into account both electron correlations and the mixing between conduction and valence bands in the calculations of matrix elements of e-e interaction.« less
  • InAs/AlSb deep quantum well (QW) structures with high electron mobility were grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates. AlSb and Al{sub 0.75}Ga{sub 0.25}Sb buffer layers were grown to accommodate the lattice mismatch (7%) between the InAs/AlSb QW active region and GaAs substrate. Transmission electron microscopy shows abrupt interface and atomic force microscopy measurements display smooth surface morphology. Growth conditions of AlSb and Al{sub 0.75}Ga{sub 0.25}Sb buffer were optimized. Al{sub 0.75}Ga{sub 0.25}Sb is better than AlSb as a buffer layer as indicated. The sample with optimal Al{sub 0.75}Ga{sub 0.25}Sb buffer layer shows a smooth surface morphology with root-mean-squaremore » roughness of 6.67 A. The electron mobility has reached as high as 27 000 cm{sup 2}/Vs with a sheet density of 4.54 Multiplication-Sign 10{sup 11}/cm{sup 2} at room temperature.« less
  • Electron cyclotron resonance in InAs/AlSb heterostructures with quantum wells of various widths in pulsed magnetic fields up to 45 T are investigated. Our experimental cyclotron energies are in satisfactory agreement with the results of theoretical calculations performed using the eight-band kp Hamiltonian. The shift of the cyclotron resonance (CR) line, which corresponds to the transition from the lowest Landau level to the low magnetic-field region, is found upon varying the electron concentration due to the negative persistent photoconductivity effect. It is shown that the observed shift of the CR lines is associated with the finite width of the density ofmore » states at the Landau levels.« less
  • GaInSb/InAs/AlSb quantum wells (QWs) with typical InSb- and GaAs-like interfaces (IFs) are investigated by temperature- and magnetic field-dependent photoluminescence (PL), respectively. The results show that (i) as temperature rises the PL energy of the QWs with either InSb- or GaAs-like IFs blueshifts slightly below 50 K but redshifts above and broadens rapidly, and the mechanism behind this is correlated to the IF roughness-related layer thickness fluctuation equivalent to a localization energy of about 9.5 meV; (ii) the PL diminishes monotonously as magnetic field rises except for the delocalized PL process of the InSb-like IF QWs, and the magnetic field-induced PL quenching ismore » attributed to the IF roughness-induced electron-hole separation in the type-II QWs; and (iii) the magnetic field-dependent PL energy follows a typical excitonic diamagnetic shift for both located and dislocated states, and the deduced exciton binding energy, reduced effective mass, and average wavefunction extent are insensitive to the IF type. Comparison of different IF-type GaInSb/InAs QWs indicates that while the PL of the InSb-like IF sample contains type-I component as the IF confines heavy holes and acts as pseudo-barrier for electrons, leading to the coexistence of electrons and holes at the IFs, the IF-type does not affect the carrier localization and the in-plane excitonic behavior obviously.« less
  • We report on superlinear electroluminescent structures based on AlSb/InAs{sub 1−x}Sb{sub x}/AlSb deep quantum wells grown by MOVPE on n-GaSb:Te substrates. Dependence of the electroluminescence (EL) spectra and optical power on the drive current in nanoheterostructures with AlSb/InAs{sub 1−x}Sb{sub x}/AlSb quantum well at 77–300 K temperature range was studied. Intensive two-band superlinear EL in the 0.5–0.8 eV photon energy range was observed. Optical power enhancement with the increasing drive current at room temperature is caused by the contribution of the additional electron-hole pairs due to the impact ionization by the electrons heated at the high energy difference between AlSb and the first electronmore » level E{sub e1} in the InAsSb QW. Study of the EL temperature dependence at 90–300 K range enabled us to define the role of the first and second heavy hole levels in the radiative recombination process. It was shown that with the temperature decrease, the relation between the energies of the valence band offset and the second heavy hole energy level changes due to the temperature transformation of the energy band diagram. That is the reason why the EL spectrum revealed radiative transitions from the first electron level E{sub e1} to the first hole level E{sub h1} in the whole temperature range (90–300 K), while the emission band related with the transitions to the second hole level occurred only at T > 200 K. Comparative examination of the nanostructures with high band offsets and different interface types (AlAs-like and InSb-like) reveals more intense EL and optical power enhancement at room temperature in the case of AlAs-like interface that could be explained by the better quality of the heterointerface and more efficient hole localization.« less