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Title: Structure and electrical properties of polycrystalline SiGe films grown by molecular beam deposition

Abstract

The structural and electrical properties of polycrystalline Si{sub 0.5}Ge{sub 0.5} films 150 nm thick grown by molecular beam deposition at temperatures of 200-550 deg. C on silicon substrates coated with amorphous layers of silicon oxynitride were studied. It is shown that the films consist of a mixture of amorphous and polycrystalline phases. The amorphous phase fraction decreases from {approx}50% in films deposited at 200 deg. C to zero in films grown at 550 deg. C. Subsequent 1-h annealing at a temperature of 550 deg. C results in complete solid-phase crystallization of all films. The electron transport of charge carriers in polycrystalline films occurs by the thermally activated mechanism associated with the energy barrier of {approx}0.2 eV at grain boundaries. Barrier lowering upon additional annealing of SiGe films correlates with an increase in the average grain size.

Authors:
; ;  [1]
  1. Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Division (Russian Federation)
Publication Date:
OSTI Identifier:
21088098
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 3; Other Information: DOI: 10.1134/S1063782607030189; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMORPHOUS STATE; ANNEALING; CHARGE CARRIERS; CRYSTALLIZATION; ELECTRICAL PROPERTIES; ELECTRONS; ENERGY BEAM DEPOSITION; FILMS; GERMANIUM SILICIDES; GRAIN BOUNDARIES; GRAIN SIZE; MILLI EV RANGE; MOLECULAR BEAMS; NITRIDES; OXYGEN COMPOUNDS; POLYCRYSTALS; SILICON; TEMPERATURE RANGE 0400-1000 K

Citation Formats

Chistokhin, I. B., E-mail: igor@thermo.isp.nsc.ru, Gutakovskii, A. K., and Deryabin, A. S. Structure and electrical properties of polycrystalline SiGe films grown by molecular beam deposition. United States: N. p., 2007. Web. doi:10.1134/S1063782607030189.
Chistokhin, I. B., E-mail: igor@thermo.isp.nsc.ru, Gutakovskii, A. K., & Deryabin, A. S. Structure and electrical properties of polycrystalline SiGe films grown by molecular beam deposition. United States. doi:10.1134/S1063782607030189.
Chistokhin, I. B., E-mail: igor@thermo.isp.nsc.ru, Gutakovskii, A. K., and Deryabin, A. S. Thu . "Structure and electrical properties of polycrystalline SiGe films grown by molecular beam deposition". United States. doi:10.1134/S1063782607030189.
@article{osti_21088098,
title = {Structure and electrical properties of polycrystalline SiGe films grown by molecular beam deposition},
author = {Chistokhin, I. B., E-mail: igor@thermo.isp.nsc.ru and Gutakovskii, A. K. and Deryabin, A. S.},
abstractNote = {The structural and electrical properties of polycrystalline Si{sub 0.5}Ge{sub 0.5} films 150 nm thick grown by molecular beam deposition at temperatures of 200-550 deg. C on silicon substrates coated with amorphous layers of silicon oxynitride were studied. It is shown that the films consist of a mixture of amorphous and polycrystalline phases. The amorphous phase fraction decreases from {approx}50% in films deposited at 200 deg. C to zero in films grown at 550 deg. C. Subsequent 1-h annealing at a temperature of 550 deg. C results in complete solid-phase crystallization of all films. The electron transport of charge carriers in polycrystalline films occurs by the thermally activated mechanism associated with the energy barrier of {approx}0.2 eV at grain boundaries. Barrier lowering upon additional annealing of SiGe films correlates with an increase in the average grain size.},
doi = {10.1134/S1063782607030189},
journal = {Semiconductors},
number = 3,
volume = 41,
place = {United States},
year = {Thu Mar 15 00:00:00 EDT 2007},
month = {Thu Mar 15 00:00:00 EDT 2007}
}