The effect of irradiation with high-energy protons on 4H-SiC detectors

doi:10.1134/S1063782607030190

Title: The effect of irradiation with high-energy protons on 4H-SiC detectors

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Abstract

The effect of irradiation of 4H-SiC ionizing-radiation detectors with various doses (as high as 10{sup 16} cm{sup -2}) of 24-GeV protons is studied. Isotopes of B, Be, Li, He, and H were produced in the nuclear spallation reactions of protons with carbon. Isotopes of Al, Mg, Na, Ne, F, O, and N were produced in the reactions of protons with silicon. The total amount of the produced stable isotopes varied in proportion with the radiation dose from 1.2 x 10{sup 11} to 5.9 x 10{sup 13} cm{sup -2}. It is shown that, at high radiation doses, the contact characteristics of the detectors change appreciably. The potential-barrier height increased from the initial value of 0.7-0.75 eV to 0.85 eV; the rectifying characteristics of the Schottky contacts deteriorated appreciably. These effects are attributed to the formation of a disordered structure of the material as a result of irradiation.

Authors:

Kazukauskas, V. ^[1]; Jasiulionis, R. ^[2]; Kalendra, V.; Vaitkus, J.-V. ^[3]

Vilnius University, Semiconductor Physics Department and Institute of Materials Science and Applied Research (Lithuania), E-mail: vaidotas.kazukauskas@ff.vu.lt
Institute of Physics (Lithuania)
Vilnius University, Semiconductor Physics Department and Institute of Materials Science and Applied Research (Lithuania)

Publication Date:: Thu Mar 15 00:00:00 EDT 2007

OSTI Identifier:: 21088097

Resource Type:: Journal Article

Resource Relation:: Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 3; Other Information: DOI: 10.1134/S1063782607030190; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; CARBON; GEV RANGE 10-100; IONIZING RADIATIONS; IRRADIATION; MILLI EV RANGE; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; RADIATION DOSES; SI SEMICONDUCTOR DETECTORS; SILICON; SILICON CARBIDES; SPALLATION; STABLE ISOTOPES

Citation Formats


                    Kazukauskas, V., Jasiulionis, R., Kalendra, V., and Vaitkus, J.-V.. The effect of irradiation with high-energy protons on 4H-SiC detectors.  United States: N. p., 2007. 
        Web.  doi:10.1134/S1063782607030190.

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                    Kazukauskas, V., Jasiulionis, R., Kalendra, V., & Vaitkus, J.-V.. The effect of irradiation with high-energy protons on 4H-SiC detectors.  United States.  doi:10.1134/S1063782607030190.

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                    Kazukauskas, V., Jasiulionis, R., Kalendra, V., and Vaitkus, J.-V.. Thu .  
        "The effect of irradiation with high-energy protons on 4H-SiC detectors".  United States.  
        doi:10.1134/S1063782607030190.

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@article{osti_21088097,

  title        = {The effect of irradiation with high-energy protons on 4H-SiC detectors},

  author       = {Kazukauskas, V. and Jasiulionis, R. and Kalendra, V. and Vaitkus, J.-V.},

  abstractNote = {The effect of irradiation of 4H-SiC ionizing-radiation detectors with various doses (as high as 10{sup 16} cm{sup -2}) of 24-GeV protons is studied. Isotopes of B, Be, Li, He, and H were produced in the nuclear spallation reactions of protons with carbon. Isotopes of Al, Mg, Na, Ne, F, O, and N were produced in the reactions of protons with silicon. The total amount of the produced stable isotopes varied in proportion with the radiation dose from 1.2 x 10{sup 11} to 5.9 x 10{sup 13} cm{sup -2}. It is shown that, at high radiation doses, the contact characteristics of the detectors change appreciably. The potential-barrier height increased from the initial value of 0.7-0.75 eV to 0.85 eV; the rectifying characteristics of the Schottky contacts deteriorated appreciably. These effects are attributed to the formation of a disordered structure of the material as a result of irradiation.},

  doi          = {10.1134/S1063782607030190},

  journal      = {Semiconductors},

  number       = 3,

  volume       = 41,

  place        = {United States},

  year         = {Thu Mar 15 00:00:00 EDT 2007},

  month        = {Thu Mar 15 00:00:00 EDT 2007}

}

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DOI: 10.1134/S1063782607030190

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