The effect of irradiation with high-energy protons on 4H-SiC detectors
Abstract
The effect of irradiation of 4H-SiC ionizing-radiation detectors with various doses (as high as 10{sup 16} cm{sup -2}) of 24-GeV protons is studied. Isotopes of B, Be, Li, He, and H were produced in the nuclear spallation reactions of protons with carbon. Isotopes of Al, Mg, Na, Ne, F, O, and N were produced in the reactions of protons with silicon. The total amount of the produced stable isotopes varied in proportion with the radiation dose from 1.2 x 10{sup 11} to 5.9 x 10{sup 13} cm{sup -2}. It is shown that, at high radiation doses, the contact characteristics of the detectors change appreciably. The potential-barrier height increased from the initial value of 0.7-0.75 eV to 0.85 eV; the rectifying characteristics of the Schottky contacts deteriorated appreciably. These effects are attributed to the formation of a disordered structure of the material as a result of irradiation.
- Authors:
- Vilnius University, Semiconductor Physics Department and Institute of Materials Science and Applied Research (Lithuania), E-mail: vaidotas.kazukauskas@ff.vu.lt
- Institute of Physics (Lithuania)
- Vilnius University, Semiconductor Physics Department and Institute of Materials Science and Applied Research (Lithuania)
- Publication Date:
- OSTI Identifier:
- 21088097
- Resource Type:
- Journal Article
- Resource Relation:
- Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 3; Other Information: DOI: 10.1134/S1063782607030190; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; CARBON; GEV RANGE 10-100; IONIZING RADIATIONS; IRRADIATION; MILLI EV RANGE; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; RADIATION DOSES; SI SEMICONDUCTOR DETECTORS; SILICON; SILICON CARBIDES; SPALLATION; STABLE ISOTOPES
Citation Formats
Kazukauskas, V., Jasiulionis, R., Kalendra, V., and Vaitkus, J.-V.. The effect of irradiation with high-energy protons on 4H-SiC detectors. United States: N. p., 2007.
Web. doi:10.1134/S1063782607030190.
Kazukauskas, V., Jasiulionis, R., Kalendra, V., & Vaitkus, J.-V.. The effect of irradiation with high-energy protons on 4H-SiC detectors. United States. doi:10.1134/S1063782607030190.
Kazukauskas, V., Jasiulionis, R., Kalendra, V., and Vaitkus, J.-V.. Thu .
"The effect of irradiation with high-energy protons on 4H-SiC detectors". United States.
doi:10.1134/S1063782607030190.
@article{osti_21088097,
title = {The effect of irradiation with high-energy protons on 4H-SiC detectors},
author = {Kazukauskas, V. and Jasiulionis, R. and Kalendra, V. and Vaitkus, J.-V.},
abstractNote = {The effect of irradiation of 4H-SiC ionizing-radiation detectors with various doses (as high as 10{sup 16} cm{sup -2}) of 24-GeV protons is studied. Isotopes of B, Be, Li, He, and H were produced in the nuclear spallation reactions of protons with carbon. Isotopes of Al, Mg, Na, Ne, F, O, and N were produced in the reactions of protons with silicon. The total amount of the produced stable isotopes varied in proportion with the radiation dose from 1.2 x 10{sup 11} to 5.9 x 10{sup 13} cm{sup -2}. It is shown that, at high radiation doses, the contact characteristics of the detectors change appreciably. The potential-barrier height increased from the initial value of 0.7-0.75 eV to 0.85 eV; the rectifying characteristics of the Schottky contacts deteriorated appreciably. These effects are attributed to the formation of a disordered structure of the material as a result of irradiation.},
doi = {10.1134/S1063782607030190},
journal = {Semiconductors},
number = 3,
volume = 41,
place = {United States},
year = {Thu Mar 15 00:00:00 EDT 2007},
month = {Thu Mar 15 00:00:00 EDT 2007}
}
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The compensation of moderately doped p-4H-SiC samples grown by the chemical vapor deposition (CVD) method under irradiation with 0.9-MeV electrons and 15-MeV protons is studied. The experimentally measured carrier removal rates are 1.2–1.6 cm{sup –1} for electrons and 240–260 cm{sup –1} for protons. The dependence of the concentration of uncompensated acceptors and donors, measured in the study, demonstrates a linear decrease with increasing irradiation dose to the point of complete compensation. This run of the dependence shows that compensation of the samples is due to the transition of carriers to deep centers formed by primary radiation-induced defects. It is demonstratedmore »
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