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Title: Structural peculiarities of 4H-SiC irradiated by Bi ions

Abstract

X-ray diffraction, photoluminescence, micro-cathodoluminescence, and scanning and transmission electron spectroscopy were used to study the 710 MeV Bi ion irradiation effect in the fluence range of 1.4 x 10{sup 9}-5 x 10{sup 10} cm{sup -2} on the structural and optical characteristics of pure high-resistivity n-type 4H-SiC epitaxial layers grown by chemical vapor deposition. It was established that the distribution of structural damage along the ion trajectory follows the computed profile of radiation defects formed in elastic collisions. The high-density ionization effect on the material characteristics has not been found under the irradiation conditions used. Optical methods revealed a wide spectrum of radiation-induced defects, with some of them contributing to the recombination process. The damaged 4H-SiC crystal lattice party recovers after annealing at 500 deg. C.

Authors:
 [1];  [2]; ; ; ;  [3]
  1. Russian Academy of Sciences, loffe Physicotechnical Institute (Russian Federation), E-mail: evk@pop.ioffe.rssi.ru
  2. Joint Institute for Nuclear Research (Russian Federation)
  3. Russian Academy of Sciences, loffe Physicotechnical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
21088093
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 4; Other Information: DOI: 10.1134/S1063782607040021; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; BISMUTH IONS; CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRON SPECTROSCOPY; EPITAXY; IONIZATION; IRRADIATION; LAYERS; MEV RANGE 100-1000; PHOTOLUMINESCENCE; SILICON CARBIDES; TEMPERATURE RANGE 0400-1000 K; X-RAY DIFFRACTION

Citation Formats

Kalinina, E. V., Skuratov, V. A., Sitnikova, A. A., Kolesnikova, E. V., Tregubova, A. S., and Shcheglov, M. P. Structural peculiarities of 4H-SiC irradiated by Bi ions. United States: N. p., 2007. Web. doi:10.1134/S1063782607040021.
Kalinina, E. V., Skuratov, V. A., Sitnikova, A. A., Kolesnikova, E. V., Tregubova, A. S., & Shcheglov, M. P. Structural peculiarities of 4H-SiC irradiated by Bi ions. United States. doi:10.1134/S1063782607040021.
Kalinina, E. V., Skuratov, V. A., Sitnikova, A. A., Kolesnikova, E. V., Tregubova, A. S., and Shcheglov, M. P. Sun . "Structural peculiarities of 4H-SiC irradiated by Bi ions". United States. doi:10.1134/S1063782607040021.
@article{osti_21088093,
title = {Structural peculiarities of 4H-SiC irradiated by Bi ions},
author = {Kalinina, E. V. and Skuratov, V. A. and Sitnikova, A. A. and Kolesnikova, E. V. and Tregubova, A. S. and Shcheglov, M. P.},
abstractNote = {X-ray diffraction, photoluminescence, micro-cathodoluminescence, and scanning and transmission electron spectroscopy were used to study the 710 MeV Bi ion irradiation effect in the fluence range of 1.4 x 10{sup 9}-5 x 10{sup 10} cm{sup -2} on the structural and optical characteristics of pure high-resistivity n-type 4H-SiC epitaxial layers grown by chemical vapor deposition. It was established that the distribution of structural damage along the ion trajectory follows the computed profile of radiation defects formed in elastic collisions. The high-density ionization effect on the material characteristics has not been found under the irradiation conditions used. Optical methods revealed a wide spectrum of radiation-induced defects, with some of them contributing to the recombination process. The damaged 4H-SiC crystal lattice party recovers after annealing at 500 deg. C.},
doi = {10.1134/S1063782607040021},
journal = {Semiconductors},
number = 4,
volume = 41,
place = {United States},
year = {Sun Apr 15 00:00:00 EDT 2007},
month = {Sun Apr 15 00:00:00 EDT 2007}
}