skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Micro-and nano-structures in silicon studied by DLTS and scanning probe methods

Abstract

Presently, there is a high interest in silicon-based optical devices that would render possible the development of fully silicon-based optoelectronics. Being an indirect-gap semiconductor, silicon is poorly efficient as a light emitter since radiative emission is limited by carrier recombination at non-radiative centers. One of the possible approaches to enhance the radiative emission from Si is the controlled introduction of micro-(dislocations) or nano-(nanocrystals) structures, which, providing quantum confinement of free carriers, prevent their diffusion towards non-radiative channels. Dislocations introduced in silicon by plastic deformation and Si nanocrystals embedded in the amorphous silicon matrix have been investigated by junction spectroscopy and scanning probe microscopy methods.

Authors:
; ;  [1];  [2]
  1. University of Bologna, Physics Department (Italy)
  2. University of Milan-Bicocca, Material Science Department (Italy)
Publication Date:
OSTI Identifier:
21088087
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 4; Other Information: DOI: 10.1134/S1063782607040112; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS; MICROSCOPY; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; SILICON

Citation Formats

Cavalcoli, D., E-mail: cavalcoli@bo.infn.it, Cavallini, A., Rossi, M., and Pizzini, S.. Micro-and nano-structures in silicon studied by DLTS and scanning probe methods. United States: N. p., 2007. Web. doi:10.1134/S1063782607040112.
Cavalcoli, D., E-mail: cavalcoli@bo.infn.it, Cavallini, A., Rossi, M., & Pizzini, S.. Micro-and nano-structures in silicon studied by DLTS and scanning probe methods. United States. doi:10.1134/S1063782607040112.
Cavalcoli, D., E-mail: cavalcoli@bo.infn.it, Cavallini, A., Rossi, M., and Pizzini, S.. Sun . "Micro-and nano-structures in silicon studied by DLTS and scanning probe methods". United States. doi:10.1134/S1063782607040112.
@article{osti_21088087,
title = {Micro-and nano-structures in silicon studied by DLTS and scanning probe methods},
author = {Cavalcoli, D., E-mail: cavalcoli@bo.infn.it and Cavallini, A. and Rossi, M. and Pizzini, S.},
abstractNote = {Presently, there is a high interest in silicon-based optical devices that would render possible the development of fully silicon-based optoelectronics. Being an indirect-gap semiconductor, silicon is poorly efficient as a light emitter since radiative emission is limited by carrier recombination at non-radiative centers. One of the possible approaches to enhance the radiative emission from Si is the controlled introduction of micro-(dislocations) or nano-(nanocrystals) structures, which, providing quantum confinement of free carriers, prevent their diffusion towards non-radiative channels. Dislocations introduced in silicon by plastic deformation and Si nanocrystals embedded in the amorphous silicon matrix have been investigated by junction spectroscopy and scanning probe microscopy methods.},
doi = {10.1134/S1063782607040112},
journal = {Semiconductors},
number = 4,
volume = 41,
place = {United States},
year = {Sun Apr 15 00:00:00 EDT 2007},
month = {Sun Apr 15 00:00:00 EDT 2007}
}