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Title: Photoluminescence study on defects in multicrystalline silicon

Abstract

We report on spatially resolved luminescence measurements on ribbon-grown silicon samples. It is found that the band-edge luminescence shows anomalous temperature behavior, namely an increase in the radiation intensity with temperature. Phosphorous diffusion gettering is found to enhance this effect. The anomalous temperature behavior is attributed to nonradiative recombination governed by shallow traps. A shift in the phonon replica of the band edge luminescence peak has been observed and associated with tensile stress.

Authors:
;  [1];  [2];  [1]
  1. IHP (Germany)
  2. BTU Cottbus (Germany), E-mail: jiaguobi@tu-cottbus.de
Publication Date:
OSTI Identifier:
21088084
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 4; Other Information: DOI: 10.1134/S1063782607040148; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL DEFECTS; DIFFUSION; GETTERING; PHONONS; PHOTOLUMINESCENCE; SILICON; STRESSES

Citation Formats

Arguirov, T., E-mail: arguirov@tu-cottbus.de, Seifer, W., Jia, G., and Kittler, M.. Photoluminescence study on defects in multicrystalline silicon. United States: N. p., 2007. Web. doi:10.1134/S1063782607040148.
Arguirov, T., E-mail: arguirov@tu-cottbus.de, Seifer, W., Jia, G., & Kittler, M.. Photoluminescence study on defects in multicrystalline silicon. United States. doi:10.1134/S1063782607040148.
Arguirov, T., E-mail: arguirov@tu-cottbus.de, Seifer, W., Jia, G., and Kittler, M.. Sun . "Photoluminescence study on defects in multicrystalline silicon". United States. doi:10.1134/S1063782607040148.
@article{osti_21088084,
title = {Photoluminescence study on defects in multicrystalline silicon},
author = {Arguirov, T., E-mail: arguirov@tu-cottbus.de and Seifer, W. and Jia, G. and Kittler, M.},
abstractNote = {We report on spatially resolved luminescence measurements on ribbon-grown silicon samples. It is found that the band-edge luminescence shows anomalous temperature behavior, namely an increase in the radiation intensity with temperature. Phosphorous diffusion gettering is found to enhance this effect. The anomalous temperature behavior is attributed to nonradiative recombination governed by shallow traps. A shift in the phonon replica of the band edge luminescence peak has been observed and associated with tensile stress.},
doi = {10.1134/S1063782607040148},
journal = {Semiconductors},
number = 4,
volume = 41,
place = {United States},
year = {Sun Apr 15 00:00:00 EDT 2007},
month = {Sun Apr 15 00:00:00 EDT 2007}
}
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