Mathematical simulation of the distribution of minority charge carriers generated in a multilayer semiconducting structure by a wide electron beam
- Tsiolkovskii Kaluga State Pedagogical University (Russian Federation)
- Moscow State University (Russian Federation)
- Bauman Moscow State Technical University, Kaluga Branch (Russian Federation)
A method of calculation of the distributions of minority charge carriers generated in a two-layer semiconductor by a wide electron beam with energies 5-30 keV based on the use of the model of independent sources is described.
- OSTI ID:
- 21088082
- Journal Information:
- Semiconductors, Vol. 41, Issue 4; Other Information: DOI: 10.1134/S1063782607040161; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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