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Title: Multimodal luminescence spectra of ion-implanted silica

Abstract

The main luminescence bands in silica SiO{sub 2} are the red luminescence R (650 nm, 1.9 eV) of the non-bridging oxygen hole center, and the blue band B (460 nm, 2.7 eV) and ultraviolet luminescence UV (290 nm, 4.3 eV), both commonly related to oxygen-deficient centers. In the present work, we will enhance or replace either the first or second constituent of SiO{sub 2}, i.e., silicon or oxygen, isoelectronically by additional implantation of the respective ions. Thus, thermally oxidized SiO{sub 2} layers have been implanted by different ions of the IV group (C, Si, Ge, Sn, Pb) and of the VI group (O, S, Se) with doses up to 5 x 10{sup 16} cm{sup -2}, leading to an atomic dopant fraction of about 4 at % at the half depth of the SiO{sub 2} layers. Very surprisingly, the cathodoluminescence spectra of oxygen-and sulfur-implanted SiO{sub 2} layers show, besides the characteristic bands, a sharp and intensive multimodal structure beginning at the green region at 500 nm up to the near infrared. The energy step differences of the sublevels equal on average 120 meV, and indicate vibration associated electronic states, probably of O{sub 2}{sup -} interstitial molecules.

Authors:
;  [1];  [2]
  1. University of Rostock, Institute of Physics (Germany)
  2. Institute of Ion Beam Physics and Materials Research, Research Center Rossendorf (Germany)
Publication Date:
OSTI Identifier:
21088080
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 4; Other Information: DOI: 10.1134/S1063782607040185; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBON IONS; CATHODOLUMINESCENCE; EV RANGE 01-10; GERMANIUM IONS; INTERSTITIALS; ION IMPLANTATION; LAYERS; LEAD IONS; MEV RANGE 100-1000; OXYGEN; OXYGEN IONS; SELENIUM IONS; SILICA; SILICON; SILICON IONS; SILICON OXIDES; SPECTRA; SULFUR IONS; TIN IONS; ULTRAVIOLET RADIATION

Citation Formats

Fitting, H.-J., E-mail: hans-joachim.fitting@uni-rostock.de, Salh, Roushdey, and Schmidt, B. Multimodal luminescence spectra of ion-implanted silica. United States: N. p., 2007. Web. doi:10.1134/S1063782607040185.
Fitting, H.-J., E-mail: hans-joachim.fitting@uni-rostock.de, Salh, Roushdey, & Schmidt, B. Multimodal luminescence spectra of ion-implanted silica. United States. doi:10.1134/S1063782607040185.
Fitting, H.-J., E-mail: hans-joachim.fitting@uni-rostock.de, Salh, Roushdey, and Schmidt, B. Sun . "Multimodal luminescence spectra of ion-implanted silica". United States. doi:10.1134/S1063782607040185.
@article{osti_21088080,
title = {Multimodal luminescence spectra of ion-implanted silica},
author = {Fitting, H.-J., E-mail: hans-joachim.fitting@uni-rostock.de and Salh, Roushdey and Schmidt, B.},
abstractNote = {The main luminescence bands in silica SiO{sub 2} are the red luminescence R (650 nm, 1.9 eV) of the non-bridging oxygen hole center, and the blue band B (460 nm, 2.7 eV) and ultraviolet luminescence UV (290 nm, 4.3 eV), both commonly related to oxygen-deficient centers. In the present work, we will enhance or replace either the first or second constituent of SiO{sub 2}, i.e., silicon or oxygen, isoelectronically by additional implantation of the respective ions. Thus, thermally oxidized SiO{sub 2} layers have been implanted by different ions of the IV group (C, Si, Ge, Sn, Pb) and of the VI group (O, S, Se) with doses up to 5 x 10{sup 16} cm{sup -2}, leading to an atomic dopant fraction of about 4 at % at the half depth of the SiO{sub 2} layers. Very surprisingly, the cathodoluminescence spectra of oxygen-and sulfur-implanted SiO{sub 2} layers show, besides the characteristic bands, a sharp and intensive multimodal structure beginning at the green region at 500 nm up to the near infrared. The energy step differences of the sublevels equal on average 120 meV, and indicate vibration associated electronic states, probably of O{sub 2}{sup -} interstitial molecules.},
doi = {10.1134/S1063782607040185},
journal = {Semiconductors},
number = 4,
volume = 41,
place = {United States},
year = {Sun Apr 15 00:00:00 EDT 2007},
month = {Sun Apr 15 00:00:00 EDT 2007}
}