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Title: Combined CL/EBIC/DLTS investigation of a regular dislocation network formed by Si wafer direct bonding

Abstract

Electrical levels of the dislocation network in Si and recombination processes via these levels were studied by means of the combination of grain-boundary deep level transient spectroscopy, grain-boundary electron beam induced current (GB-EBIC) and cathodoluminescence (CL). It was found two deep level traps and one shallow trap existed at the interface of the bonded interface; these supply the recombination centers for carriers. The total recombination probability based on GB-EBIC data increased with the excitation level monotonically; however, the radiative recombination based on D1-D2 CL data exhibited a maximum at a certain excitation level. By applying an external bias across the bonded interface, the CL signal of D-lines was enhanced dramatically. These results are consistent with our models about two channels of recombination via the trap levels.

Authors:
 [1];  [2]; ;  [1];  [2];  [1];  [3]
  1. IHP (Germany)
  2. IHP/BTU Joint Lab (Germany)
  3. MPI fuer Mikrostrukturphysik (Germany)
Publication Date:
OSTI Identifier:
21088079
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 4; Other Information: DOI: 10.1134/S1063782607040197; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CATHODOLUMINESCENCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS; EXCITATION; GRAIN BOUNDARIES; RECOMBINATION; SCANNING ELECTRON MICROSCOPY; SILICON

Citation Formats

Yu, X., Vyvenko, O., Kittler, M., Seifert, W., Mtchedlidze, T., Arguirov, T., and Reiche, M.. Combined CL/EBIC/DLTS investigation of a regular dislocation network formed by Si wafer direct bonding. United States: N. p., 2007. Web. doi:10.1134/S1063782607040197.
Yu, X., Vyvenko, O., Kittler, M., Seifert, W., Mtchedlidze, T., Arguirov, T., & Reiche, M.. Combined CL/EBIC/DLTS investigation of a regular dislocation network formed by Si wafer direct bonding. United States. doi:10.1134/S1063782607040197.
Yu, X., Vyvenko, O., Kittler, M., Seifert, W., Mtchedlidze, T., Arguirov, T., and Reiche, M.. Sun . "Combined CL/EBIC/DLTS investigation of a regular dislocation network formed by Si wafer direct bonding". United States. doi:10.1134/S1063782607040197.
@article{osti_21088079,
title = {Combined CL/EBIC/DLTS investigation of a regular dislocation network formed by Si wafer direct bonding},
author = {Yu, X. and Vyvenko, O. and Kittler, M. and Seifert, W. and Mtchedlidze, T. and Arguirov, T. and Reiche, M.},
abstractNote = {Electrical levels of the dislocation network in Si and recombination processes via these levels were studied by means of the combination of grain-boundary deep level transient spectroscopy, grain-boundary electron beam induced current (GB-EBIC) and cathodoluminescence (CL). It was found two deep level traps and one shallow trap existed at the interface of the bonded interface; these supply the recombination centers for carriers. The total recombination probability based on GB-EBIC data increased with the excitation level monotonically; however, the radiative recombination based on D1-D2 CL data exhibited a maximum at a certain excitation level. By applying an external bias across the bonded interface, the CL signal of D-lines was enhanced dramatically. These results are consistent with our models about two channels of recombination via the trap levels.},
doi = {10.1134/S1063782607040197},
journal = {Semiconductors},
number = 4,
volume = 41,
place = {United States},
year = {Sun Apr 15 00:00:00 EDT 2007},
month = {Sun Apr 15 00:00:00 EDT 2007}
}