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Title: Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging

Abstract

Cathodoluminescence characteristics of modulation-doped transistor heterostructures AlGaAs/InGaAs/AlGaAs with the width of quantum well {approx}12 nm are investigated in this work. The investigation was conducted by means of cathodoluminescence generation depth changing; the depth depends on electron energy. This fact allows us to obtain cathodoluminescence characteristics from different depth of the investigated structure. The influence of {gamma}-radiation with several doses on the cathodoluminescence spectra was examined.

Authors:
; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation), E-mail: zam@mail.ioffe.ru
Publication Date:
OSTI Identifier:
21088077
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 4; Other Information: DOI: 10.1134/S1063782607040227; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; CARRIER DENSITY; CATHODOLUMINESCENCE; DOPED MATERIALS; GALLIUM ARSENIDES; GAMMA RADIATION; INDIUM ARSENIDES; QUANTUM WELLS; RADIATION DOSES; SPECTRA; TRANSISTORS

Citation Formats

Khrustalev, V. S., E-mail: vasya3006@rambler.ru, Bobyl, A. V., Konnikov, S. G., Maleev, N. A., and Zamoryanskaya, M. V.. Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging. United States: N. p., 2007. Web. doi:10.1134/S1063782607040227.
Khrustalev, V. S., E-mail: vasya3006@rambler.ru, Bobyl, A. V., Konnikov, S. G., Maleev, N. A., & Zamoryanskaya, M. V.. Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging. United States. doi:10.1134/S1063782607040227.
Khrustalev, V. S., E-mail: vasya3006@rambler.ru, Bobyl, A. V., Konnikov, S. G., Maleev, N. A., and Zamoryanskaya, M. V.. Sun . "Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging". United States. doi:10.1134/S1063782607040227.
@article{osti_21088077,
title = {Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging},
author = {Khrustalev, V. S., E-mail: vasya3006@rambler.ru and Bobyl, A. V. and Konnikov, S. G. and Maleev, N. A. and Zamoryanskaya, M. V.},
abstractNote = {Cathodoluminescence characteristics of modulation-doped transistor heterostructures AlGaAs/InGaAs/AlGaAs with the width of quantum well {approx}12 nm are investigated in this work. The investigation was conducted by means of cathodoluminescence generation depth changing; the depth depends on electron energy. This fact allows us to obtain cathodoluminescence characteristics from different depth of the investigated structure. The influence of {gamma}-radiation with several doses on the cathodoluminescence spectra was examined.},
doi = {10.1134/S1063782607040227},
journal = {Semiconductors},
number = 4,
volume = 41,
place = {United States},
year = {Sun Apr 15 00:00:00 EDT 2007},
month = {Sun Apr 15 00:00:00 EDT 2007}
}
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  • Emission parameters of single-mode laser diodes based on InGaAs/GaAs/AlGaAs heterostructures doped with carbon and grown by using the metallorganic vapour phase epitaxy (MOVPE) technique are studied. The obtained results show that maintaining a certain doping profile ensuring optimisation of series resistance and internal optical losses during all fabrication stages of the active element of a diode laser, provides for enhancement of the laser efficiency. Based on laser heterostructures studied in this paper, highly efficient single-transverse-mode laser diodes emitting 300 mW at 980 nm have been manufactured. (lasers)
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  • We report on low threshold current strained InGaAs/AlGaAs single quantum well lasers grown by molecular beam epitaxy. Broad-area threshold current densities of 114 A/cm{sup 2} at 990 nm were measured for 1540-{mu}m-long lasers. Threshold currents of 2.4 mA at 950 nm were obtained for an uncoated buried-heterostructure device with a 2-{mu}m-wide stripe and 425-{mu}m-long cavity. With reflective coatings the best device showed 0.9 mA threshold current ({ital L}=225 {mu}m). Preliminary modulation measurements show bandwidths up to 5.5 GHz limited by the detector response.