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Title: Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging

Abstract

Cathodoluminescence characteristics of modulation-doped transistor heterostructures AlGaAs/InGaAs/AlGaAs with the width of quantum well {approx}12 nm are investigated in this work. The investigation was conducted by means of cathodoluminescence generation depth changing; the depth depends on electron energy. This fact allows us to obtain cathodoluminescence characteristics from different depth of the investigated structure. The influence of {gamma}-radiation with several doses on the cathodoluminescence spectra was examined.

Authors:
; ;
Publication Date:
OSTI Identifier:
21088077
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 41; Journal Issue: 4; Other Information: DOI: 10.1134/S1063782607040227; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; CARRIER DENSITY; CATHODOLUMINESCENCE; DOPED MATERIALS; GALLIUM ARSENIDES; GAMMA RADIATION; INDIUM ARSENIDES; QUANTUM WELLS; RADIATION DOSES; SPECTRA; TRANSISTORS

Citation Formats

Khrustalev, V. S., E-mail: vasya3006@rambler.ru, Bobyl, A V, Konnikov, S G, Maleev, N A, and Zamoryanskaya, M. V. Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging. United States: N. p., 2007. Web. doi:10.1134/S1063782607040227.
Khrustalev, V. S., E-mail: vasya3006@rambler.ru, Bobyl, A V, Konnikov, S G, Maleev, N A, & Zamoryanskaya, M. V. Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging. United States. https://doi.org/10.1134/S1063782607040227
Khrustalev, V. S., E-mail: vasya3006@rambler.ru, Bobyl, A V, Konnikov, S G, Maleev, N A, and Zamoryanskaya, M. V. 2007. "Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging". United States. https://doi.org/10.1134/S1063782607040227.
@article{osti_21088077,
title = {Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging},
author = {Khrustalev, V. S., E-mail: vasya3006@rambler.ru and Bobyl, A V and Konnikov, S G and Maleev, N A and Zamoryanskaya, M. V.},
abstractNote = {Cathodoluminescence characteristics of modulation-doped transistor heterostructures AlGaAs/InGaAs/AlGaAs with the width of quantum well {approx}12 nm are investigated in this work. The investigation was conducted by means of cathodoluminescence generation depth changing; the depth depends on electron energy. This fact allows us to obtain cathodoluminescence characteristics from different depth of the investigated structure. The influence of {gamma}-radiation with several doses on the cathodoluminescence spectra was examined.},
doi = {10.1134/S1063782607040227},
url = {https://www.osti.gov/biblio/21088077}, journal = {Semiconductors},
issn = {1063-7826},
number = 4,
volume = 41,
place = {United States},
year = {Sun Apr 15 00:00:00 EDT 2007},
month = {Sun Apr 15 00:00:00 EDT 2007}
}