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Title: Diagnostics of films and layers of nanometer thickness using middle energy ion scattering technique

Abstract

This paper presents a short description of a thin film parameter study technique based on the analysis of energy and angular spectra of ions backscattered from the film with initial energies in the 50-250 keV range, as well as on the registration of characteristic X-ray radiation induced in the film under study by the probing ion beam. The technique is a nondestructive one and makes it possible to determine the geometrical parameters of the film, the element composition and its change with depth, and the crystal structure quality of the film as a whole and of sublattices of definite elements. Some examples are given on the application of this technique to the study of multicomponent film structures at different stages of their growth.

Authors:
; ; ;  [1]
  1. Ioffe Physicotechnical Institute of Russian Academy of Sciences (Russian Federation)
Publication Date:
OSTI Identifier:
21088074
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 4; Other Information: DOI: 10.1134/S1063782607040252; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL STRUCTURE; ION BEAMS; IONS; KEV RANGE 10-100; KEV RANGE 100-1000; LAYERS; SCATTERING; SPECTRA; THIN FILMS; X RADIATION

Citation Formats

Afrosimov, V. V., Il'in, R. N., E-mail: r.ilin@mail.ioffe.ru, Sakharov, V. I., and Serenkov, I. T. Diagnostics of films and layers of nanometer thickness using middle energy ion scattering technique. United States: N. p., 2007. Web. doi:10.1134/S1063782607040252.
Afrosimov, V. V., Il'in, R. N., E-mail: r.ilin@mail.ioffe.ru, Sakharov, V. I., & Serenkov, I. T. Diagnostics of films and layers of nanometer thickness using middle energy ion scattering technique. United States. doi:10.1134/S1063782607040252.
Afrosimov, V. V., Il'in, R. N., E-mail: r.ilin@mail.ioffe.ru, Sakharov, V. I., and Serenkov, I. T. Sun . "Diagnostics of films and layers of nanometer thickness using middle energy ion scattering technique". United States. doi:10.1134/S1063782607040252.
@article{osti_21088074,
title = {Diagnostics of films and layers of nanometer thickness using middle energy ion scattering technique},
author = {Afrosimov, V. V. and Il'in, R. N., E-mail: r.ilin@mail.ioffe.ru and Sakharov, V. I. and Serenkov, I. T.},
abstractNote = {This paper presents a short description of a thin film parameter study technique based on the analysis of energy and angular spectra of ions backscattered from the film with initial energies in the 50-250 keV range, as well as on the registration of characteristic X-ray radiation induced in the film under study by the probing ion beam. The technique is a nondestructive one and makes it possible to determine the geometrical parameters of the film, the element composition and its change with depth, and the crystal structure quality of the film as a whole and of sublattices of definite elements. Some examples are given on the application of this technique to the study of multicomponent film structures at different stages of their growth.},
doi = {10.1134/S1063782607040252},
journal = {Semiconductors},
number = 4,
volume = 41,
place = {United States},
year = {Sun Apr 15 00:00:00 EDT 2007},
month = {Sun Apr 15 00:00:00 EDT 2007}
}
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