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Title: Simulation of e-beam penetration through multilayer structures

Abstract

Using developed simulation in discrete loss approximation Monte-Carlo program, we carried out analysis of the energy spectra of secondary electrons of multilayered structures. The possibility of determination of subsurface layer parameters using energy spectra of secondary electrons is shown as a way to avoid time-consuming Monte-Carlo simulations for some cases.

Authors:
 [1];  [2]
  1. Moscow State University, Physical Department (Russian Federation), E-mail: sergebor@mail.ru
  2. Institute of Problems of Microelectronic Technology (Russian Federation)
Publication Date:
OSTI Identifier:
21088068
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 5; Other Information: DOI: 10.1134/S1063782607050065; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPUTERIZED SIMULATION; ELECTRON BEAMS; ELECTRONS; ENERGY SPECTRA; LAYERS; MONTE CARLO METHOD

Citation Formats

Borisov, S. S., and Zaitsev, S. I. Simulation of e-beam penetration through multilayer structures. United States: N. p., 2007. Web. doi:10.1134/S1063782607050065.
Borisov, S. S., & Zaitsev, S. I. Simulation of e-beam penetration through multilayer structures. United States. doi:10.1134/S1063782607050065.
Borisov, S. S., and Zaitsev, S. I. Tue . "Simulation of e-beam penetration through multilayer structures". United States. doi:10.1134/S1063782607050065.
@article{osti_21088068,
title = {Simulation of e-beam penetration through multilayer structures},
author = {Borisov, S. S. and Zaitsev, S. I.},
abstractNote = {Using developed simulation in discrete loss approximation Monte-Carlo program, we carried out analysis of the energy spectra of secondary electrons of multilayered structures. The possibility of determination of subsurface layer parameters using energy spectra of secondary electrons is shown as a way to avoid time-consuming Monte-Carlo simulations for some cases.},
doi = {10.1134/S1063782607050065},
journal = {Semiconductors},
number = 5,
volume = 41,
place = {United States},
year = {Tue May 15 00:00:00 EDT 2007},
month = {Tue May 15 00:00:00 EDT 2007}
}