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Title: Reconstruction of the InSb (111)In surface as a result of sulfur adsorption

Abstract

The variation in reconstruction in the InSb (111)In surface during adsorption of sulfur and annealing in ultrahigh vacuum was investigated by methods of low-energy electron diffraction and Auger electron spectroscopy. It is shown that evolution of reconstruction of the InSb (111)In surface substantially depends on the starting thickness of the adsorbed S layer on the surface. If the thickness of the S layer is only slightly larger than that of the monolayer, reconstruction (1 x 1) is formed on the surface, which transforms into reconstruction (2 x 2) during the subsequent annealing. If the S layer is several monolayers thick, this layer is initially amorphous. Annealing of such a surface at 315-325 deg. C can lead to the formation of reconstruction ({radical}3 x {radical}3)-R30 deg., which transforms into reconstruction (2 x 2) at a higher temperature. This reconstruction is retained during further annealing until the S atoms vanish from the surface completely. It is shown for the first time that the reconstruction ({radical}3 x {radical}3)-R30 deg. can form during adsorption of chalcogenide atoms on the III-V (111)III surface.

Authors:
 [1]; ;  [2]
  1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation), E-mail: mleb@triat.ioffe.ru
  2. Shizuouka University, Nano-Device Process Lab, Research Institute of Electronics (Japan)
Publication Date:
OSTI Identifier:
21088067
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 5; Other Information: DOI: 10.1134/S1063782607050077; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ADSORPTION; ANNEALING; AUGER ELECTRON SPECTROSCOPY; ELECTRON DIFFRACTION; INDIUM ANTIMONIDES; LAYERS; SULFUR; SURFACES; TEMPERATURE RANGE 0400-1000 K

Citation Formats

Lebedev, M. V., Shimomura, M., and Fukuda, Y.. Reconstruction of the InSb (111)In surface as a result of sulfur adsorption. United States: N. p., 2007. Web. doi:10.1134/S1063782607050077.
Lebedev, M. V., Shimomura, M., & Fukuda, Y.. Reconstruction of the InSb (111)In surface as a result of sulfur adsorption. United States. doi:10.1134/S1063782607050077.
Lebedev, M. V., Shimomura, M., and Fukuda, Y.. Tue . "Reconstruction of the InSb (111)In surface as a result of sulfur adsorption". United States. doi:10.1134/S1063782607050077.
@article{osti_21088067,
title = {Reconstruction of the InSb (111)In surface as a result of sulfur adsorption},
author = {Lebedev, M. V. and Shimomura, M. and Fukuda, Y.},
abstractNote = {The variation in reconstruction in the InSb (111)In surface during adsorption of sulfur and annealing in ultrahigh vacuum was investigated by methods of low-energy electron diffraction and Auger electron spectroscopy. It is shown that evolution of reconstruction of the InSb (111)In surface substantially depends on the starting thickness of the adsorbed S layer on the surface. If the thickness of the S layer is only slightly larger than that of the monolayer, reconstruction (1 x 1) is formed on the surface, which transforms into reconstruction (2 x 2) during the subsequent annealing. If the S layer is several monolayers thick, this layer is initially amorphous. Annealing of such a surface at 315-325 deg. C can lead to the formation of reconstruction ({radical}3 x {radical}3)-R30 deg., which transforms into reconstruction (2 x 2) at a higher temperature. This reconstruction is retained during further annealing until the S atoms vanish from the surface completely. It is shown for the first time that the reconstruction ({radical}3 x {radical}3)-R30 deg. can form during adsorption of chalcogenide atoms on the III-V (111)III surface.},
doi = {10.1134/S1063782607050077},
journal = {Semiconductors},
number = 5,
volume = 41,
place = {United States},
year = {Tue May 15 00:00:00 EDT 2007},
month = {Tue May 15 00:00:00 EDT 2007}
}