X-ray photoelectron spectroscopy of gallium nitride films grown by radical-beam gettering epitaxy

Journal Article · Tue May 15 00:00:00 EDT 2007 · Semiconductors

DOI:https://doi.org/10.1134/S1063782607050156· OSTI ID:21088062

Kotlyarevsky, M B ^[1]

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1. Academy of Management and Information Technology (Ukraine)

Thin GaN films were grown on GaAs(111) substrates by radical-beam gettering epitaxy. The structural quality of the films was studied by high-resolution x-ray diffraction. The chemical composition of the GaAs surface and GaN film was studied by x-ray photoelectron spectroscopy. It is shown that Ga-N and As-N bonds are formed on the GaAs surface at initial growth stages at low temperatures. The state of the film-substrate interface was studied. It was found that prolonged annealing of GaN films in nitrogen radicals shifts the composition to nitrogen excess.

• OSTI ID: 21088062
• Journal Information: Semiconductors, Vol. 41, Issue 5; Other Information: DOI: 10.1134/S1063782607050156; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CHEMICAL COMPOSITION
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM NITRIDES
GETTERING
NITROGEN
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY