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Title: Low-temperature recrystallization of Ge nanolayers on ZnSe

Abstract

The in situ X-ray photoelectron spectroscopy observation of low-temperature recrystallization of an amorphous Ge layer deposited on a ZnSe film at room temperature is reported. It is shown that the experimentally measured shifts of the Ge 3d core level are consistent with the changes observed in the crystal structure of the layer by the high-energy electron diffraction technique in the reflection mode of measurements. The shifts can be attributed to successive nanometer-scaled structural changes in the Ge layer with increasing temperature.

Authors:
;  [1]
  1. Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Division (Russian Federation)
Publication Date:
OSTI Identifier:
21088058
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 5; Other Information: DOI: 10.1134/S106378260705020X; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; FILMS; LAYERS; RECRYSTALLIZATION; TEMPERATURE RANGE 0273-0400 K; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC SELENIDES

Citation Formats

Suprun, S. P., E-mail: suprun@thermo.isp.nsc.ru, and Fedosenko, E. V. Low-temperature recrystallization of Ge nanolayers on ZnSe. United States: N. p., 2007. Web. doi:10.1134/S106378260705020X.
Suprun, S. P., E-mail: suprun@thermo.isp.nsc.ru, & Fedosenko, E. V. Low-temperature recrystallization of Ge nanolayers on ZnSe. United States. doi:10.1134/S106378260705020X.
Suprun, S. P., E-mail: suprun@thermo.isp.nsc.ru, and Fedosenko, E. V. Tue . "Low-temperature recrystallization of Ge nanolayers on ZnSe". United States. doi:10.1134/S106378260705020X.
@article{osti_21088058,
title = {Low-temperature recrystallization of Ge nanolayers on ZnSe},
author = {Suprun, S. P., E-mail: suprun@thermo.isp.nsc.ru and Fedosenko, E. V.},
abstractNote = {The in situ X-ray photoelectron spectroscopy observation of low-temperature recrystallization of an amorphous Ge layer deposited on a ZnSe film at room temperature is reported. It is shown that the experimentally measured shifts of the Ge 3d core level are consistent with the changes observed in the crystal structure of the layer by the high-energy electron diffraction technique in the reflection mode of measurements. The shifts can be attributed to successive nanometer-scaled structural changes in the Ge layer with increasing temperature.},
doi = {10.1134/S106378260705020X},
journal = {Semiconductors},
number = 5,
volume = 41,
place = {United States},
year = {Tue May 15 00:00:00 EDT 2007},
month = {Tue May 15 00:00:00 EDT 2007}
}