skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Low-temperature recrystallization of Ge nanolayers on ZnSe

Abstract

The in situ X-ray photoelectron spectroscopy observation of low-temperature recrystallization of an amorphous Ge layer deposited on a ZnSe film at room temperature is reported. It is shown that the experimentally measured shifts of the Ge 3d core level are consistent with the changes observed in the crystal structure of the layer by the high-energy electron diffraction technique in the reflection mode of measurements. The shifts can be attributed to successive nanometer-scaled structural changes in the Ge layer with increasing temperature.

Authors:
;  [1]
  1. Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Division (Russian Federation)
Publication Date:
OSTI Identifier:
21088058
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 41; Journal Issue: 5; Other Information: DOI: 10.1134/S106378260705020X; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; FILMS; LAYERS; RECRYSTALLIZATION; TEMPERATURE RANGE 0273-0400 K; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC SELENIDES

Citation Formats

Suprun, S. P., E-mail: suprun@thermo.isp.nsc.ru, and Fedosenko, E. V. Low-temperature recrystallization of Ge nanolayers on ZnSe. United States: N. p., 2007. Web. doi:10.1134/S106378260705020X.
Suprun, S. P., E-mail: suprun@thermo.isp.nsc.ru, & Fedosenko, E. V. Low-temperature recrystallization of Ge nanolayers on ZnSe. United States. doi:10.1134/S106378260705020X.
Suprun, S. P., E-mail: suprun@thermo.isp.nsc.ru, and Fedosenko, E. V. Tue . "Low-temperature recrystallization of Ge nanolayers on ZnSe". United States. doi:10.1134/S106378260705020X.
@article{osti_21088058,
title = {Low-temperature recrystallization of Ge nanolayers on ZnSe},
author = {Suprun, S. P., E-mail: suprun@thermo.isp.nsc.ru and Fedosenko, E. V.},
abstractNote = {The in situ X-ray photoelectron spectroscopy observation of low-temperature recrystallization of an amorphous Ge layer deposited on a ZnSe film at room temperature is reported. It is shown that the experimentally measured shifts of the Ge 3d core level are consistent with the changes observed in the crystal structure of the layer by the high-energy electron diffraction technique in the reflection mode of measurements. The shifts can be attributed to successive nanometer-scaled structural changes in the Ge layer with increasing temperature.},
doi = {10.1134/S106378260705020X},
journal = {Semiconductors},
number = 5,
volume = 41,
place = {United States},
year = {Tue May 15 00:00:00 EDT 2007},
month = {Tue May 15 00:00:00 EDT 2007}
}
  • In order to find the optimal conditions for sample preparation of the binary germanide Ba{sub 6}Ge{sub 25}, the germanium-rich part of the Ba-Ge phase diagram was redetermined by means of metallography, X-ray powder diffraction and differential thermal analysis. The temperature behavior of cubic Ba{sub 6}Ge{sub 25} was investigated both on polycrystalline samples and single crystals. The temperature dependence of the lattice parameter exhibits two anomalies at about 180 and 230K, respectively, which are caused by a structure transformation in two steps with hysteresis. Powder (T=10-295K) and single-crystal (T=95-295K) X-ray diffraction studies confirm that the symmetry of Ba{sub 6}Ge{sub 25} (spacemore » group P4{sub 1}32) remains unchanged within the entire temperature range. A reconstructive behavior of the structural transformation is observed, involving Ge-Ge bond breaking and barium cation displacements. Some Ge4 type atoms ({approx}28%) are so significantly displaced during cooling that Ge4-Ge6 bonds break and new three-bonded (3b)Ge{sup -} species (electron acceptors) are formed. Consequently, the number of charge carriers is reduced, affecting the physical properties. The reversible bond breaking involved in this process is a typical characteristic of a solid-state chemical reac0010ti.« less
  • A chemical reaction scheme for room-temperature atomic-layer epitaxial growth of II{endash}VI semiconductors is described and demonstrated. Growth is accomplished by dosing in an ultra-high-vacuum chamber, and the surface structure and composition is probed {ital in situ} by a variety of electron and ion probes. {copyright} {ital 1997 American Institute of Physics.}
  • Single-crystal ZnSe nanowires are grown on a prepatterned gold catalyst by molecular-beam epitaxy. Optimum selectivity and maximum nanowire densities are obtained for growth temperatures in the range 400-450 deg. C, but gold-assisted growth is demonstrated for temperatures as low as 300 deg. C. This suggests a diffusion process on/through the catalyst particle in the solid state, in contrast to the commonly assumed liquid phase growth models. Straight wires, as thin as 10 nm, nucleate together with thicker and saw-like structures. A gold particle is always found at the tip in both cases.
  • ZnSe nanowires with a dominant wurtzite structure have been grown at low temperature (300 °C) by molecular beam epitaxy assisted by solid Au nanoparticles. The nanowires emission is polarized perpendicularly to their axis in agreement with the wurtzite selection rules. Alternations of wurtzite and zinc-blende regions have been observed by transmission electron microscopy, and their impact on the nanowires optical properties has been studied by microphotoluminescence. The nanowires show a dominant intense near-band-edge emission as well as the ZnSe wurtzite free exciton line. A type II band alignment between zinc-blende and wurtzite ZnSe is evidenced by time-resolved photoluminescence. From this measurement,more » we deduce values for the conduction and valence band offsets of 98 and 50 meV, respectively.« less