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Title: Electron spin resonance of interacting spins in n-Ge. 1. The spectrum and g factor

Journal Article · · Semiconductors
; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

The changes in the spectrum and g factor of electron spin resonance due to the interaction of spins in the insulator state of n-Ge near the insulator-metal phase transition are studied. It is found that, in this region, the g factor decreases as the doping level is increased and exhibits anisotropy in the immediate vicinity of the transition. The effects of compensation and induced antiferromagnetic ordering on the g factor are analyzed. It is shown that, as the transition point is approached, the high-temperature limit of observation of the electron spin resonance rises sharply.

OSTI ID:
21088036
Journal Information:
Semiconductors, Vol. 41, Issue 7; Other Information: DOI: 10.1134/S1063782607070044; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
Country of Publication:
United States
Language:
English