1.8-{mu}m laser diodes based on quantum-size AlInGaAs/InP heterostructures

Journal Article · Sun Jul 15 00:00:00 EDT 2007 · Semiconductors

DOI:https://doi.org/10.1134/S1063782607070147· OSTI ID:21088027

Lyutetskii, A V ^[1]; Borshchev, K S ^[2]; Bondarev, A D; Nalet, T A; Pikhtin, N A; Slipchenko, S O; Fetisova, N V; Khomylev, M A ^[1]; Marmalyuk, A A; Ryaboshtan, Yu L; Simakov, V A ^[3]

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
2. Voronezh State University (Russian Federation)
3. Sigm Plus (Russian Federation)

The concept of power semiconductor lasers based on asymmetric separate confinement heterostructures is applied to the AlInGaAs/InP heterostructures. The laser heterostructures emitting at the wavelength 1.75-1.8 {mu}m are fabricated by metal-organic chemical vapor deposition. Based on the heterostructures grown, high-power multimode laser diodes of the mesa-strip design with the maximum emission power 2.0 W in the continuous mode at room temperature and 20 W in the pulsed operation mode are fabricated. The internal optical losses in the lasers were reduced to 2.2 cm{sup -1}.

• OSTI ID: 21088027
• Journal Information: Semiconductors, Vol. 41, Issue 7; Other Information: DOI: 10.1134/S1063782607070147; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ALLOYS
ARSENIC ALLOYS
CHEMICAL VAPOR DEPOSITION
GALLIUM ALLOYS
INDIUM ALLOYS
INDIUM PHOSPHIDES
ORGANOMETALLIC COMPOUNDS
SEMICONDUCTOR LASERS
TEMPERATURE RANGE 0273-0400 K