Picosecond kinetics of photoexcited carriers in gallium arsenide containing aluminum nanoclusters

Journal Article · Wed Aug 15 00:00:00 EDT 2007 · Semiconductors

DOI:https://doi.org/10.1134/S1063782607080088· OSTI ID:21088021

Vostokov, N V; Gaponova, D M; Danil'tsev, V M; Dubinov, A A; Krasil'nik, Z F ^[1]; Korytin, A I ^[2]; Kuritsyn, D I; Pryakhin, D A; Shashkin, V I ^[1]

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1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2. Russian Academy of Sciences, Institute of Applied Physics (Russian Federation)

The kinetics of photoluminescence and reflectance of GaAs containing Al clusters is studied. The lifetime of photocarriers in the samples investigated was equal to {approx}15 ps. A simple model describing the kinetics of photoluminescence and the reflection coefficient is proposed.

• OSTI ID: 21088021
• Journal Information: Semiconductors, Vol. 41, Issue 8; Other Information: DOI: 10.1134/S1063782607080088; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
CHARGE CARRIERS
GALLIUM ARSENIDES
KINETICS
LIFETIME
NANOSTRUCTURES
PHOTOLUMINESCENCE