Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n{sup +}-Si-SiO{sub 2}-n-Si heterostructures
Precision measurements of dynamic current-voltage characteristics of an Al-n{sup +}-Si-SiO{sub 2}-n-Si structure with a thin (<50 A) oxide make it possible to separate the active (I{sub a}) and capacitive (I{sub c}) components from the total current. An algorithm for the analysis of the capacitive component is developed; this algorithm makes it possible to determine in a single experiment the doping level of n-Si, the oxide capacitance C{sub i}, and also the density and sign of the charge fixed in the oxide. Dependences of the surface potential in n-Si and the voltage drop across the oxide on the gate potential V{sub g} in the transverse electric fields vertical bar F vertical bar {<=} 10 MV/cm were calculated based on the above data without using any adjustable parameters. At maximum values of vertical bar F vertical bar , the sheet density of electrons (holes) in n-Si does not exceed 10{sup 13} cm{sup -2}, which is indicative of the degeneracy and size quantization of electron gas. The dependences I{sub t}(V{sub g}) and V{sub i}(V{sub g}) were used to recover the current-voltage characteristics of the tunneling current I{sub t}(V{sub i}) {identical_to} I{sub a}(V{sub i}); these characteristics were measured within more than ten orders of magnitude of their range of variation in the conditions of both the enhancement of the n-Si surface and the inversion. The observed I{sub t}(V{sub i}) characteristics are not quantitatively described in the context of existing concepts of the tunnel effect.
- OSTI ID:
- 21087994
- Journal Information:
- Semiconductors, Vol. 41, Issue 9; Other Information: DOI: 10.1134/S1063782607090187; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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