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Title: Electroluminescence spectra of ultraviolet light-emitting diodes based on p-n-heterostructures coated with phosphors

Abstract

The electroluminescence spectra of light-emitting diodes based on p-n heterostructures of the InGaN/AlGaN/GaN type are studied in the near-ultraviolet spectral region (360-405 nm). The spectra are peaked at the wavelengths 385 and 395 nm, and the intensity of emission falls exponentially with the photon energy in the shorter-wavelength and longer-wavelength regions. The emitters in the green and yellow spectral regions based on these light-emitting diodes coated with silicate phosphors are studied. The luminescence spectra of phosphors have the Gaussian shape and maximums in the range from 525 to 560 nm. The color characteristics of emitters depend on the ratios of intensities of the ultraviolet and yellow-green bands. The possibilities of fabrication of light-emitting diodes of visible luminescence based on ultraviolet light-emitting diodes that excite colored phosphors are discussed.

Authors:
;  [1];  [2];
  1. Scientific and Production Center of Optoelectronic Devices OPTEL (Russian Federation)
  2. Federal State Unitary Enterprise NII Platan (Russian Federation)
Publication Date:
OSTI Identifier:
21087993
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 41; Journal Issue: 9; Other Information: DOI: 10.1134/S1063782607090199; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTROLUMINESCENCE; FABRICATION; GALLIUM NITRIDES; INDIUM NITRIDES; LIGHT EMITTING DIODES; PHOSPHORS; PHOTONS; SILICATES; SPECTRA; ULTRAVIOLET RADIATION

Citation Formats

Gal'china, N A, Kogan, L M, Soshchin, N P, Shirokov, S S, and Yunovich, A. E. Electroluminescence spectra of ultraviolet light-emitting diodes based on p-n-heterostructures coated with phosphors. United States: N. p., 2007. Web. doi:10.1134/S1063782607090199.
Gal'china, N A, Kogan, L M, Soshchin, N P, Shirokov, S S, & Yunovich, A. E. Electroluminescence spectra of ultraviolet light-emitting diodes based on p-n-heterostructures coated with phosphors. United States. doi:10.1134/S1063782607090199.
Gal'china, N A, Kogan, L M, Soshchin, N P, Shirokov, S S, and Yunovich, A. E. Sat . "Electroluminescence spectra of ultraviolet light-emitting diodes based on p-n-heterostructures coated with phosphors". United States. doi:10.1134/S1063782607090199.
@article{osti_21087993,
title = {Electroluminescence spectra of ultraviolet light-emitting diodes based on p-n-heterostructures coated with phosphors},
author = {Gal'china, N A and Kogan, L M and Soshchin, N P and Shirokov, S S and Yunovich, A. E.},
abstractNote = {The electroluminescence spectra of light-emitting diodes based on p-n heterostructures of the InGaN/AlGaN/GaN type are studied in the near-ultraviolet spectral region (360-405 nm). The spectra are peaked at the wavelengths 385 and 395 nm, and the intensity of emission falls exponentially with the photon energy in the shorter-wavelength and longer-wavelength regions. The emitters in the green and yellow spectral regions based on these light-emitting diodes coated with silicate phosphors are studied. The luminescence spectra of phosphors have the Gaussian shape and maximums in the range from 525 to 560 nm. The color characteristics of emitters depend on the ratios of intensities of the ultraviolet and yellow-green bands. The possibilities of fabrication of light-emitting diodes of visible luminescence based on ultraviolet light-emitting diodes that excite colored phosphors are discussed.},
doi = {10.1134/S1063782607090199},
journal = {Semiconductors},
issn = {1063-7826},
number = 9,
volume = 41,
place = {United States},
year = {2007},
month = {9}
}