Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level

Journal Article · Thu Nov 15 00:00:00 EST 2007 · Semiconductors

DOI:https://doi.org/10.1134/S1063782607110048· OSTI ID:21087970

Vyrko, S A ^[1]; Zabrodskii, A G ^[2]

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1. Belarussian State University (Belarus)
2. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

The static field effect and capacitance of Si crystals with hopping conductivity over defects in the charge states (+1), (0), and (-1), which pin the Fermi level, are calculated. In the Si band gap, the defects in the (0) and (+1) charge states form a v' band, and in the charge states (-1) and (0), they form a c' band. The width of the c' and v' energy bands is calculated under the assumption of Coulomb interaction of each charged defect with only the nearest ion. The energy gap between the c' and v' bands is assumed to be constant. Nonmonotonicity of the dependence of capacitance and surface hopping conductivity on the electric potential on the surface of the highly damaged Si crystals is predicted.

• OSTI ID: 21087970
• Journal Information: Semiconductors, Vol. 41, Issue 11; Other Information: DOI: 10.1134/S1063782607110048; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITANCE
CHARGE STATES
CRYSTALS
ENERGY GAP
FERMI LEVEL
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
SILICON
SURFACES