Decrease in effective electron mobility in the channel of a metal-oxide-semiconductor transistor as the gate length is decreased
- Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Effective electron mobility {mu}{sub eff} in channels of metal-oxide-semiconductor transistors with a gate length L in the range of 3.8 to 0.34 {mu}m was measured; the transistors were formed on wafers of the silicon-oninsulator type. It was found that {mu}{sub eff} decreases as L is decreased. It is shown that this decrease can be accounted for by the effect of series resistances of the source and drain only if it is assumed that there is a rapid increase in these resistances as the gate voltage is decreased. This assumption is difficult to substantiate. A more realistic model is suggested; this model accounts for the observed decrease in {mu}{sub eff} as L is decreased. The model implies that zones with a mobility lower than that in the middle part of the channel originate at the edges of the gate. An analysis shows that, in this case, the plot of the dependence of 1/{mu}{sub eff} on 1/L should be linear, which is exactly what is observed experimentally. The use of this plot makes it possible to determine both the electron mobility {mu}{sub 0} in the middle part of the channel and the quantity A that characterizes the zones with lowered mobility at the gate's edges.
- OSTI ID:
- 21087922
- Journal Information:
- Semiconductors, Vol. 42, Issue 2; Other Information: DOI: 10.1007/s11453-008-2018-5; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states
Degradation mechanisms of electron mobility in metal-oxide-semiconductor field-effect transistors with LaAlO{sub 3} gate dielectric