Effect of melting on the acoustic response of CdTe and GaAs subjected to the pulsed laser irradiation

Journal Article · Sat Mar 15 00:00:00 EDT 2008 · Semiconductors

DOI:https://doi.org/10.1007/S11453-008-3007-4· OSTI ID:21087914

Baidullaeva, A; Vlasenko, A I; Dauletmuratov, B K ^[1]; Lyashenko, O V ^[2]; Mozol', P E ^[1]

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1. National Academy of Sciences of Ukraine, Institute of Semiconductor Physics (Ukraine)
2. Kiev National University (Ukraine)

The effect of a threshold process of surface melting on the acoustic response in CdTe and GaAs subjected to pulsed laser radiation is considered and the mechanisms of excitation of sonic signals are analyzed. Melting thresholds of the surface of binary compounds CdTe and GaAs are established under irradiation by pulses of nanosecond duration of ruby and neodymium lasers from measurements of the amplitude of the acoustic response.

• OSTI ID: 21087914
• Journal Information: Semiconductors, Vol. 42, Issue 3; Other Information: DOI: 10.1007/s11453-008-3007-4; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
EXCITATION
GALLIUM ARSENIDES
LASER RADIATION
MELTING
PULSED IRRADIATION
SURFACES