Enhancement of photoluminescence of structures with nanocrystalline silicon stimulated by low-dose irradiation with {gamma}-ray photons
- National Academy of Sciences of Ukraine, Institute of Physics (Ukraine)
- National Academy of Sciences of Ukraine, Lashkarev Institute of Semiconductor Physics (Ukraine)
The spectra of infrared transmittance and photoluminescence of thin-film nc-Si/SiO{sub 2} structures containing nanocrystalline silicon (nc-Si) and subjected to ionizing radiation ({sup 60}Co) in the dose range D= 10{sup 4}-10{sup 7} rad are studied. It is shown for the first time that low radiation doses (5 x 10{sup 3} rad < D < 10{sup 5} rad) lead to significant (as large as 40%) increases in the intensity of the photoluminescence band at 1.33 eV. The infrared spectra indicate that there is no variation in the composition and structure of the nanocomposite. The observed effect is accounted for by structural ordering of the nanocrystal-matrix interface; this ordering is stimulated by low-dose irradiation, i.e., removal of defects (recombination centers) at the nc-Si/SiO{sub 2} interfaces and resulting enhancement of the radiative-recombination channel.
- OSTI ID:
- 21087871
- Journal Information:
- Semiconductors, Vol. 42, Issue 5; Other Information: DOI: 10.1134/S1063782608050151; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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