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Title: Hysteresis of tunnel current in w-GaN/AlGaN(0001) double-barrier structures

Abstract

On the basis of a self-consistent solution of the Schroedinger and Poisson equations, the features of the tunnel-current hysteresis in w-GaN/AlGaN(0001) double-barrier structures are investigated. It is shown that the hysteresis loop depends on the mutual orientation of external and internal fields in the well and is wider at the voltage polarity when these fields compensate each other. Within the framework of the single-resonance approximation, a tunnel-current model in the double-barrier structure is developed, and the relation between the hysteresis-loop parameters and resonant states is found. It is established that the hysteresis loop can be relatively wide ({approx}4 V) even in geometrically symmetric structures with the participation of two resonances. In asymmetrical structures, the change in the growth-surface type results in enhancement or suppression of the hysteresis loop depending on the alternation of nonequivalent barriers.

Authors:
;  [1]
  1. Tomsk State University, Kuznetsov Siberian Physicotechnical Institute (Russian Federation), E-mail: gsn@phys.tsu.ru
Publication Date:
OSTI Identifier:
21087870
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 42; Journal Issue: 5; Other Information: DOI: 10.1134/S1063782608050163; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GALLIUM NITRIDES; HYSTERESIS; POISSON EQUATION; SCHROEDINGER EQUATION; SURFACES

Citation Formats

Razzhuvalov, A. N., E-mail: shuvalov@phys.tsu.ru, and Grinyaev, S. N. Hysteresis of tunnel current in w-GaN/AlGaN(0001) double-barrier structures. United States: N. p., 2008. Web. doi:10.1134/S1063782608050163.
Razzhuvalov, A. N., E-mail: shuvalov@phys.tsu.ru, & Grinyaev, S. N. Hysteresis of tunnel current in w-GaN/AlGaN(0001) double-barrier structures. United States. https://doi.org/10.1134/S1063782608050163
Razzhuvalov, A. N., E-mail: shuvalov@phys.tsu.ru, and Grinyaev, S. N. 2008. "Hysteresis of tunnel current in w-GaN/AlGaN(0001) double-barrier structures". United States. https://doi.org/10.1134/S1063782608050163.
@article{osti_21087870,
title = {Hysteresis of tunnel current in w-GaN/AlGaN(0001) double-barrier structures},
author = {Razzhuvalov, A. N., E-mail: shuvalov@phys.tsu.ru and Grinyaev, S. N.},
abstractNote = {On the basis of a self-consistent solution of the Schroedinger and Poisson equations, the features of the tunnel-current hysteresis in w-GaN/AlGaN(0001) double-barrier structures are investigated. It is shown that the hysteresis loop depends on the mutual orientation of external and internal fields in the well and is wider at the voltage polarity when these fields compensate each other. Within the framework of the single-resonance approximation, a tunnel-current model in the double-barrier structure is developed, and the relation between the hysteresis-loop parameters and resonant states is found. It is established that the hysteresis loop can be relatively wide ({approx}4 V) even in geometrically symmetric structures with the participation of two resonances. In asymmetrical structures, the change in the growth-surface type results in enhancement or suppression of the hysteresis loop depending on the alternation of nonequivalent barriers.},
doi = {10.1134/S1063782608050163},
url = {https://www.osti.gov/biblio/21087870}, journal = {Semiconductors},
issn = {1063-7826},
number = 5,
volume = 42,
place = {United States},
year = {Thu May 15 00:00:00 EDT 2008},
month = {Thu May 15 00:00:00 EDT 2008}
}