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Title: Electronic properties of single-crystal diamonds heavily doped with boron

Abstract

Single-crystal diamonds with characteristic sizes of 2-7 mm doped with boron in the concentration range 10{sup 19}-10{sup 20} cm{sup -3} have been grown by the temperature gradient method at high static pressures. The temperature dependence of the resistance R of the synthesized single crystals has been measured in the range 0.5 K < T < 297 K. An activated dependence R(T) with an activation energy of about 50 meV is observed in the range from room temperature to T {approx} 200 K. At temperatures below approximately 50 K, the temperature dependence of the conductivity for heavily doped crystals is proportional to T{sup 1/2}, which is characteristic of degenerate semiconductors with a high number of defects.

Authors:
; ; ; ;  [1]; ; ; ;  [2]
  1. Technological Institute for Superhard and Novel Carbon Materials (Russian Federation)
  2. Moscow State University (Russian Federation)
Publication Date:
OSTI Identifier:
21072496
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Experimental and Theoretical Physics; Journal Volume: 104; Journal Issue: 4; Other Information: DOI: 10.1134/S1063776107040097; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; BORON; DIAMONDS; DOPED MATERIALS; MONOCRYSTALS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE GRADIENTS; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K

Citation Formats

Buga, S. G., Blank, V. D., Terent'ev, S. A., Kuznetsov, M. S., Nosukhin, S. A., Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru, Krechetov, A. V., Kytin, V. G., and Kytin, G. A.. Electronic properties of single-crystal diamonds heavily doped with boron. United States: N. p., 2007. Web. doi:10.1134/S1063776107040097.
Buga, S. G., Blank, V. D., Terent'ev, S. A., Kuznetsov, M. S., Nosukhin, S. A., Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru, Krechetov, A. V., Kytin, V. G., & Kytin, G. A.. Electronic properties of single-crystal diamonds heavily doped with boron. United States. doi:10.1134/S1063776107040097.
Buga, S. G., Blank, V. D., Terent'ev, S. A., Kuznetsov, M. S., Nosukhin, S. A., Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru, Krechetov, A. V., Kytin, V. G., and Kytin, G. A.. Sun . "Electronic properties of single-crystal diamonds heavily doped with boron". United States. doi:10.1134/S1063776107040097.
@article{osti_21072496,
title = {Electronic properties of single-crystal diamonds heavily doped with boron},
author = {Buga, S. G. and Blank, V. D. and Terent'ev, S. A. and Kuznetsov, M. S. and Nosukhin, S. A. and Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru and Krechetov, A. V. and Kytin, V. G. and Kytin, G. A.},
abstractNote = {Single-crystal diamonds with characteristic sizes of 2-7 mm doped with boron in the concentration range 10{sup 19}-10{sup 20} cm{sup -3} have been grown by the temperature gradient method at high static pressures. The temperature dependence of the resistance R of the synthesized single crystals has been measured in the range 0.5 K < T < 297 K. An activated dependence R(T) with an activation energy of about 50 meV is observed in the range from room temperature to T {approx} 200 K. At temperatures below approximately 50 K, the temperature dependence of the conductivity for heavily doped crystals is proportional to T{sup 1/2}, which is characteristic of degenerate semiconductors with a high number of defects.},
doi = {10.1134/S1063776107040097},
journal = {Journal of Experimental and Theoretical Physics},
number = 4,
volume = 104,
place = {United States},
year = {Sun Apr 15 00:00:00 EDT 2007},
month = {Sun Apr 15 00:00:00 EDT 2007}
}