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Title: Effect of precursor on epitaxially grown of ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate by hydrothermal technique

Abstract

Single crystalline ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate, using two different precursors by hydrothermal route at a temperature of 90 deg. C were successfully grown. The effect of starting precursor on crystalline nature, surface morphology and optical emission of the films were studied. ZnO thin films were grown in aqueous solution of zinc acetate and zinc nitrate. X-ray diffraction analysis revealed that all the thin films were single crystalline in nature and exhibited wurtzite symmetry and c-axis orientation. The thin films obtained with zinc nitrate had a more pitted rough surface morphology compared to the film grown in zinc acetate. However the thickness of the films remained unaffected by the nature of the starting precursor. Sharp luminescence peaks were observed from the thin films almost at identical energies but deep level emission was slightly prominent for the thin film grown in zinc nitrate.

Authors:
; ; ; ;  [1]; ;  [2];  [3]
  1. School of Advanced Materials Engineering and Research Center of Industrial Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756 (Korea, Republic of)
  2. Applied Optics R and BD Division, Korea Photonics Technology Institute, Gwangju 500-460 (Korea, Republic of)
  3. School of Advanced Materials Engineering and Research Center of Industrial Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756 (Korea, Republic of), E-mail: ihlee@chonbuk.ac.kr
Publication Date:
OSTI Identifier:
21068209
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 43; Journal Issue: 3; Other Information: DOI: 10.1016/j.materresbull.2007.11.015; PII: S0025-5408(07)00523-5; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACETATES; AQUEOUS SOLUTIONS; EPITAXY; GALLIUM NITRIDES; LUMINESCENCE; MONOCRYSTALS; MORPHOLOGY; PRECURSOR; SAPPHIRE; SURFACES; SYMMETRY; SYNTHESIS; THICKNESS; THIN FILMS; X-RAY DIFFRACTION; ZINC NITRATES; ZINC OXIDES

Citation Formats

Sahoo, Trilochan, Ju, Jin-Woo, Kannan, V., Kim, Jin Soo, Yu, Yeon-Tae, Han, Myung-Soo, Park, Young-Sik, and Lee, In-Hwan. Effect of precursor on epitaxially grown of ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate by hydrothermal technique. United States: N. p., 2008. Web. doi:10.1016/j.materresbull.2007.11.015.
Sahoo, Trilochan, Ju, Jin-Woo, Kannan, V., Kim, Jin Soo, Yu, Yeon-Tae, Han, Myung-Soo, Park, Young-Sik, & Lee, In-Hwan. Effect of precursor on epitaxially grown of ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate by hydrothermal technique. United States. doi:10.1016/j.materresbull.2007.11.015.
Sahoo, Trilochan, Ju, Jin-Woo, Kannan, V., Kim, Jin Soo, Yu, Yeon-Tae, Han, Myung-Soo, Park, Young-Sik, and Lee, In-Hwan. Tue . "Effect of precursor on epitaxially grown of ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate by hydrothermal technique". United States. doi:10.1016/j.materresbull.2007.11.015.
@article{osti_21068209,
title = {Effect of precursor on epitaxially grown of ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate by hydrothermal technique},
author = {Sahoo, Trilochan and Ju, Jin-Woo and Kannan, V. and Kim, Jin Soo and Yu, Yeon-Tae and Han, Myung-Soo and Park, Young-Sik and Lee, In-Hwan},
abstractNote = {Single crystalline ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate, using two different precursors by hydrothermal route at a temperature of 90 deg. C were successfully grown. The effect of starting precursor on crystalline nature, surface morphology and optical emission of the films were studied. ZnO thin films were grown in aqueous solution of zinc acetate and zinc nitrate. X-ray diffraction analysis revealed that all the thin films were single crystalline in nature and exhibited wurtzite symmetry and c-axis orientation. The thin films obtained with zinc nitrate had a more pitted rough surface morphology compared to the film grown in zinc acetate. However the thickness of the films remained unaffected by the nature of the starting precursor. Sharp luminescence peaks were observed from the thin films almost at identical energies but deep level emission was slightly prominent for the thin film grown in zinc nitrate.},
doi = {10.1016/j.materresbull.2007.11.015},
journal = {Materials Research Bulletin},
number = 3,
volume = 43,
place = {United States},
year = {Tue Mar 04 00:00:00 EST 2008},
month = {Tue Mar 04 00:00:00 EST 2008}
}