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Title: Effect of post-deposition annealing on phase formation and properties of RF magnetron sputtered PLZT thin films

Abstract

In this work, we report the preparation of lanthanum-modified lead zirconate titanate (PLZT) thin films by RF magnetron sputtering on platinized silicon (Pt/Ti/SiO{sub 2}/Si) substrate. Sputtering was done in pure argon at 100 W RF power without external substrate heating. X-ray diffraction studies were performed on the films to study the effect of post-deposition furnace annealing temperature and time on the perovskite phase formation of PLZT. Annealing at 650 deg. C for 2 h was found to be optimum for the preparation of PLZT films in pure perovskite phase. The effect of different annealing conditions on surface morphology of the films was examined using AFM. The dielectric, ferroelectric and electrical properties of these films were also investigated in detail as a function of different annealing conditions. The pure perovskite film exhibits better properties than the other films which have some fraction of unwanted pyrochlore phase. The remanent polarization for pure perovskite film was found to be {approx}29 {mu}C/cm{sup 2} which is almost double compared to the films having mixed phases. The dc resistivity of the pure perovskite film was found to be 7.7 x 10{sup 10} {omega} cm at the electric field of {approx}80 kV/cm.

Authors:
 [1];  [2];  [1]
  1. Centre for Applied Research in Electronics, IIT Delhi, New Delhi 110016 (India)
  2. BITS Pilani, Goa Campus, Zuari Nagar, Goa 403726 (India)
Publication Date:
OSTI Identifier:
21068199
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 43; Journal Issue: 2; Other Information: DOI: 10.1016/j.materresbull.2007.02.044; PII: S0025-5408(07)00105-5; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ARGON; ATOMIC FORCE MICROSCOPY; DEPOSITION; DIELECTRIC PROPERTIES; FERROELECTRIC MATERIALS; MAGNETRONS; PEROVSKITE; PLZT; PZT; SILICON; SILICON OXIDES; SPUTTERING; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Singh, Ravindra, Goel, T C, and Chandra, Sudhir. Effect of post-deposition annealing on phase formation and properties of RF magnetron sputtered PLZT thin films. United States: N. p., 2008. Web. doi:10.1016/j.materresbull.2007.02.044.
Singh, Ravindra, Goel, T C, & Chandra, Sudhir. Effect of post-deposition annealing on phase formation and properties of RF magnetron sputtered PLZT thin films. United States. https://doi.org/10.1016/j.materresbull.2007.02.044
Singh, Ravindra, Goel, T C, and Chandra, Sudhir. Tue . "Effect of post-deposition annealing on phase formation and properties of RF magnetron sputtered PLZT thin films". United States. https://doi.org/10.1016/j.materresbull.2007.02.044.
@article{osti_21068199,
title = {Effect of post-deposition annealing on phase formation and properties of RF magnetron sputtered PLZT thin films},
author = {Singh, Ravindra and Goel, T C and Chandra, Sudhir},
abstractNote = {In this work, we report the preparation of lanthanum-modified lead zirconate titanate (PLZT) thin films by RF magnetron sputtering on platinized silicon (Pt/Ti/SiO{sub 2}/Si) substrate. Sputtering was done in pure argon at 100 W RF power without external substrate heating. X-ray diffraction studies were performed on the films to study the effect of post-deposition furnace annealing temperature and time on the perovskite phase formation of PLZT. Annealing at 650 deg. C for 2 h was found to be optimum for the preparation of PLZT films in pure perovskite phase. The effect of different annealing conditions on surface morphology of the films was examined using AFM. The dielectric, ferroelectric and electrical properties of these films were also investigated in detail as a function of different annealing conditions. The pure perovskite film exhibits better properties than the other films which have some fraction of unwanted pyrochlore phase. The remanent polarization for pure perovskite film was found to be {approx}29 {mu}C/cm{sup 2} which is almost double compared to the films having mixed phases. The dc resistivity of the pure perovskite film was found to be 7.7 x 10{sup 10} {omega} cm at the electric field of {approx}80 kV/cm.},
doi = {10.1016/j.materresbull.2007.02.044},
url = {https://www.osti.gov/biblio/21068199}, journal = {Materials Research Bulletin},
issn = {0025-5408},
number = 2,
volume = 43,
place = {United States},
year = {2008},
month = {2}
}