Resonant tunneling of electrons between twodimensional systems of different densities in a quantizing magnetic field
Abstract
The results of experimental investigation of the vertical electron transport in a GaAs/Al{sub 0.3}Ga{sub 0.7}As/GaAs singlebarrier tunneling heterostructure with a doped barrier are presented. Twodimensional accumulation layers appear on different sides of the barrier as a result of the ionization of Si donors in the barrier layer. The nonmonotonic shift of the current peak is found in the IV curve of the tunneling diode in a magnetic field perpendicular to the planes of twodimensional layers. Such a behavior is shown to be successfully explained in the model of appearing the Coulomb pseudogap and the pinning of the spinsplit Landau levels at the Fermi levels of the contacts. In this explanation, it is necessary to assume that the Lande factor is independent of the filling factors of the Landau levels and is g* = 7.5 for both layers.
 Authors:
 Russian Academy of Sciences, Institute of Microelectronics Technology (Russian Federation)
 Institut National des Sciences Appliquees (France)
 Publication Date:
 OSTI Identifier:
 21067699
 Resource Type:
 Journal Article
 Resource Relation:
 Journal Name: Journal of Experimental and Theoretical Physics; Journal Volume: 102; Journal Issue: 4; Other Information: DOI: 10.1134/S1063776106040182; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA)
 Country of Publication:
 United States
 Language:
 English
 Subject:
 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM ARSENIDES; DOPED MATERIALS; ELECTRONS; FERMI LEVEL; GALLIUM ARSENIDES; IONIZATION; LANDE FACTOR; LAYERS; MAGNETIC FIELDS; SPIN; TUNNEL DIODES; TUNNEL EFFECT; TWODIMENSIONAL CALCULATIONS
Citation Formats
Popov, V. G., Email: popov@ipmthpm.ac.ru, Dubrovskii, Yu. V., and Portal, J.C. Resonant tunneling of electrons between twodimensional systems of different densities in a quantizing magnetic field. United States: N. p., 2006.
Web. doi:10.1134/S1063776106040182.
Popov, V. G., Email: popov@ipmthpm.ac.ru, Dubrovskii, Yu. V., & Portal, J.C. Resonant tunneling of electrons between twodimensional systems of different densities in a quantizing magnetic field. United States. doi:10.1134/S1063776106040182.
Popov, V. G., Email: popov@ipmthpm.ac.ru, Dubrovskii, Yu. V., and Portal, J.C. Sat .
"Resonant tunneling of electrons between twodimensional systems of different densities in a quantizing magnetic field". United States.
doi:10.1134/S1063776106040182.
@article{osti_21067699,
title = {Resonant tunneling of electrons between twodimensional systems of different densities in a quantizing magnetic field},
author = {Popov, V. G., Email: popov@ipmthpm.ac.ru and Dubrovskii, Yu. V. and Portal, J.C.},
abstractNote = {The results of experimental investigation of the vertical electron transport in a GaAs/Al{sub 0.3}Ga{sub 0.7}As/GaAs singlebarrier tunneling heterostructure with a doped barrier are presented. Twodimensional accumulation layers appear on different sides of the barrier as a result of the ionization of Si donors in the barrier layer. The nonmonotonic shift of the current peak is found in the IV curve of the tunneling diode in a magnetic field perpendicular to the planes of twodimensional layers. Such a behavior is shown to be successfully explained in the model of appearing the Coulomb pseudogap and the pinning of the spinsplit Landau levels at the Fermi levels of the contacts. In this explanation, it is necessary to assume that the Lande factor is independent of the filling factors of the Landau levels and is g* = 7.5 for both layers.},
doi = {10.1134/S1063776106040182},
journal = {Journal of Experimental and Theoretical Physics},
number = 4,
volume = 102,
place = {United States},
year = {Sat Apr 15 00:00:00 EDT 2006},
month = {Sat Apr 15 00:00:00 EDT 2006}
}

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