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Title: Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures

Abstract

N-doped ZnO films were prepared by annealing zinc oxynitride films deposited by rf reactive sputtering. Two Raman peaks were observed at 274 and 580 cm{sup -1}. According to the variation of the integral intensity of these two peaks, the nitrogen activation at 500 deg. C [the activation temperature (AT)] has been obtained. Below the AT, the integral intensities of them show a different variation trend. X-ray photoelectron spectroscopy (XPS) indicates the N chemical state variation for them and finds the activated Zn-N bond. Further analyses by photoluminescence (PL) spectra and spectroscopic ellipsometry (SE) have been carried out. The activated sample exhibits a symmetric emission peak at 3.22 eV assigned to be the A{sup 0}X emission at room temperature. SE investigation takes account of samples within the different temperature span divided by the AT. Different factors, such as nitrogen dopant (N){sub O} and the nanocrystal growth, which affect the redshift of the absorption edges, have been discussed.

Authors:
; ; ; ; ; ;  [1]
  1. Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)
Publication Date:
OSTI Identifier:
21064479
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 102; Journal Issue: 11; Other Information: DOI: 10.1063/1.2817255; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CHEMICAL STATE; CRYSTAL GROWTH; DEPOSITION; DOPED MATERIALS; ELLIPSOMETRY; NANOSTRUCTURES; NITRIDES; NITROGEN; PHOTOLUMINESCENCE; RAMAN SPECTRA; SEMICONDUCTOR MATERIALS; SPUTTERING; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDES

Citation Formats

Zhang, J P, Zhang, L D, Zhu, L Q, Zhang, Y, Liu, M, Wang, X J, He, G, and Department of Applied Chemistry, School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656. Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures. United States: N. p., 2007. Web. doi:10.1063/1.2817255.
Zhang, J P, Zhang, L D, Zhu, L Q, Zhang, Y, Liu, M, Wang, X J, He, G, & Department of Applied Chemistry, School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656. Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures. United States. https://doi.org/10.1063/1.2817255
Zhang, J P, Zhang, L D, Zhu, L Q, Zhang, Y, Liu, M, Wang, X J, He, G, and Department of Applied Chemistry, School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656. 2007. "Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures". United States. https://doi.org/10.1063/1.2817255.
@article{osti_21064479,
title = {Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures},
author = {Zhang, J P and Zhang, L D and Zhu, L Q and Zhang, Y and Liu, M and Wang, X J and He, G and Department of Applied Chemistry, School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656},
abstractNote = {N-doped ZnO films were prepared by annealing zinc oxynitride films deposited by rf reactive sputtering. Two Raman peaks were observed at 274 and 580 cm{sup -1}. According to the variation of the integral intensity of these two peaks, the nitrogen activation at 500 deg. C [the activation temperature (AT)] has been obtained. Below the AT, the integral intensities of them show a different variation trend. X-ray photoelectron spectroscopy (XPS) indicates the N chemical state variation for them and finds the activated Zn-N bond. Further analyses by photoluminescence (PL) spectra and spectroscopic ellipsometry (SE) have been carried out. The activated sample exhibits a symmetric emission peak at 3.22 eV assigned to be the A{sup 0}X emission at room temperature. SE investigation takes account of samples within the different temperature span divided by the AT. Different factors, such as nitrogen dopant (N){sub O} and the nanocrystal growth, which affect the redshift of the absorption edges, have been discussed.},
doi = {10.1063/1.2817255},
url = {https://www.osti.gov/biblio/21064479}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 102,
place = {United States},
year = {Sat Dec 01 00:00:00 EST 2007},
month = {Sat Dec 01 00:00:00 EST 2007}
}