Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis
- Departement OptoGaN, Institut d'Electronique Fondamentale, UMR 8622 CNRS, Universite Paris-Sud, 91405 Orsay cedex (France)
The Au-assisted molecular beam epitaxial growth of InAs nanowires is discussed. In situ reflection high-energy electron diffraction observations of phase transitions of the catalyst particles indicate that they can be liquid below the eutectic point of the Au-In alloy. The temperature range where the catalyst can be liquid covers the range where we observed nanowire formation (380-430 deg. C). The variation of nanowire growth rate with temperature is investigated. Pure axial nanowire growth is observed at high temperature while mixed axial/lateral growth occurs at low temperature. The change of the InAs nanowire shape with growth duration is studied. It is shown that significant lateral growth of the lower part of the nanowire starts when its length exceeds a critical value, so that their shape presents a steplike profile along their axis. A theoretical model is proposed to explain the nanowire morphology as a result of the axial and lateral contributions of the nanowire growth.
- OSTI ID:
- 21064435
- Journal Information:
- Journal of Applied Physics, Vol. 102, Issue 9; Other Information: DOI: 10.1063/1.2809417; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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